Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65)
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2002/95/EC)
UNR2154
UN2154)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65)
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2002/95/EC)
UNR2154
UN2154)
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UN2154
Abstract: UNR2154
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 1.9±0.1 Collector-emitter voltage (Base open)
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2002/95/EC)
UNR2154
UN2154)
SC-59
UN2154
UNR2154
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UN2154
Abstract: UNR2154
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
UNR2154
UN2154)
UN2154
UNR2154
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UN2154
Abstract: UNR2154
Text: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Collector to base voltage VCBO −30 V Collector to emitter voltage
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UNR2154
UN2154)
SC-59
UN2154
UNR2154
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UN2154
Abstract: No abstract text available
Text: Transistors with built-in Resistor UN2154 Silicon PNP epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 For digital circuits 1.45 0.95 1 3 +0.1 0.4 –0.05 +0.2 1.9±0.2 Ta=25˚C +0.1 0.16 –0.06 0.8 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter Symbol Ratings
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UN2154
UN2154
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UN2154
Abstract: UNR2154
Text: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High forward current transfer ratio hFE • Costs can be reduced through downsizing of the equipment and
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UNR2154
UN2154)
UN2154
UNR2154
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UN2154
Abstract: UNR2154
Text: Transistors with built-in Resistor UNR2154 UN2154 Silicon PNP epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 For digital circuits 1.45 0.95 1 3 +0.1 0.4 –0.05 +0.2 1.9±0.2 (Ta=25˚C) +0.1 0.16 –0.06 0.8 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter
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UNR2154
UN2154)
UN2154
UNR2154
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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OCR Scan
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UN1000
600mW
UN2000
200mW)
N2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN7000
UN8000
UN9110
UNR921CJ
UN1219
un4115
un1211
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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