IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BYC10 Preliminary DIODE ULTRAFAST, LOW SWITCHING LOSS RECTIFIER DIODE DESCRIPTION The UTC BYC10 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC10 can be used in applications, such as
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BYC10
BYC10
BYC10L-6-TA2-T
BYC10G-6-TA2-T
O-220-2
BYC10L-6-TA3-T
QW-R601-023
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smps with uc3842 and tl431
Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES
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BF3510TV
/BF3506TV
BHA/K3012TV
BTAxx600CW
AVS08
L6560/A
L6561
L4981A/B
ST90T40
/W/P/HxxNB50/60/80
smps with uc3842 and tl431
mc34063 step down with mosfet
mc34063 step up with mosfet
MC34063 MOSFET
UC3842 step up converter
mc34063 step down 5a
mc34063 step up 5a
MOSFET 1000v 30a
uc3842 step down
mc34063 triple output
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igbt inverter welder schematic
Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field
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diode 10a 400v
Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
Param99
IRFI840G
O-220
diode 10a 400v
10a 400v bipolar transistor
transistor IRF 630
ultrafast diode 10a 400v
ultrafast swiching transistor
C-150
IRFI840G
IRGIB10B60KD1
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TRANSISTOR BIPOLAR 400V 20A
Abstract: C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
IRFI840G
O-220
TRANSISTOR BIPOLAR 400V 20A
C-150
IRFI840G
IRGIB10B60KD1
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C-150
Abstract: IRGIB10B60KD1P
Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1P
O-220
O-220
C-150
IRGIB10B60KD1P
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Untitled
Abstract: No abstract text available
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
Collector-99
IRFI840G
O-220
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C-150
Abstract: l107mh
Text: PD - 94913 IRGIB10B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1PbF
O-220
O-220
C-150
l107mh
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C-150
Abstract: IRFI840G IRGIB10B60KD1
Text: PD-94576 IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576
IRGIB10B60KD1
O-220
IRFI840G
O-220
C-150
IRFI840G
IRGIB10B60KD1
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Untitled
Abstract: No abstract text available
Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1P
O-220
O-220
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C-150
Abstract: IRGIB10B60KD1P
Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1P
O-220
O-220
C-150
IRGIB10B60KD1P
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT20GT60KR G 600V APT20GT60KR APT20GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT20GT60KR
APT20GT60KRG*
150KHz
O-220
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APT20GT60KR
Abstract: APT20GT60KRG igbt 400V 20A igbt 400V 40A
Text: APT20GT60KR G 600V TYPICAL PERFORMANCE CURVES APT20GT60KR APT20GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT20GT60KR
APT20GT60KR
APT20GT60KRG*
O-220
150KHz
APT20GT60KRG
igbt 400V 20A
igbt 400V 40A
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01ED0
H1-O01ED0-0106030ND
em 234 stepper
2SC5586 equivalent
8002 1018 AUDIO amplifier
2SC5586
2SC5487
voltage doubler bridge
varistor 560-2
2sa2003
se125n
SE090
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2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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TM1641S-L
TM1661B-L
TM1661P-L
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
2SC5586 equivalent
2sc5586
2sa1694 equivalent
2SC5487
transistor 2SC5586
STR83159
em 234 stepper
SE090
SK 5154S
2SK3460 equivalent
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APT12GT60KR
Abstract: APT12GT60KRG
Text: TYPICAL PERFORMANCE CURVES APT12GT60KR G 600V APT12GT60KR APT12GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT12GT60KR
APT12GT60KR
APT12GT60KRG*
O-220
150KHz
APT12GT60KRG
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT12GT60KR G 600V APT12GT60KR APT12GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT12GT60KR
APT12GT60KR
APT12GT60KRG*
O-220
150KHz
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Infineon diffusion solder
Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices
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600/650V
SDB06S60
IDD02SG60C
IDD03SG60C
IDD04SG60C
IDD05SG60C
IDD06SG60C
IDD08SG60C
IDD09SG60C
IDD10SG60C
Infineon diffusion solder
Infineon power diffusion process
300v dc 230v ac inverter
r2l diode
igbt 400V 5A
IDV06S60C
diode 400V 4A
IDW16G65C5
idv02s60c
schottky 400v
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APT12GT60KRG
Abstract: G1408 APT12GT60KR
Text: APT12GT60KR G 600V TYPICAL PERFORMANCE CURVES APT12GT60KR APT12GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT12GT60KR
APT12GT60KR
APT12GT60KRG*
O-220
150KHz
APT12GT60KRG
G1408
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igbt 50V 420A
Abstract: irg7ic irg7i 105MH
Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner
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IRG7IC18FDPbF
O-220AB
igbt 50V 420A
irg7ic
irg7i
105MH
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Untitled
Abstract: No abstract text available
Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A C E G E Applications • • • • TO-220AB Full-Pak n-channel Air Conditioner Compressor
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IRG7IC18FDPbF
O-220AB
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Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –
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DS750
87C750
80C51
PZ3032-12A44
BUK101-50GS
BUW12AF
BU2520AF
16kHz
BY328
Zener Diode 3v 400mW
transistor bc548b
BC107 transistor
TRANSISTOR bc108
bc547 cross reference chart
Transistor BC109
DIAC OB3
DIAC Br100
74HCT IC family spec
TRANSISTOR mosfet BF998
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Untitled
Abstract: No abstract text available
Text: STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 • Safe paralleling D²PAK • Low thermal resistance
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STGB10H60DF,
STGF10H60DF,
STGP10H60DF
O-220
O-220FP
DocID025111
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