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    ULTRAFAST DIODE 10A 400V Search Results

    ULTRAFAST DIODE 10A 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ULTRAFAST DIODE 10A 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD O-220AB

    IRG4BC20SD

    Abstract: No abstract text available
    Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD O-220AB IRG4BC20SD

    IRG4BC20SD

    Abstract: No abstract text available
    Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD O-220AB IRG4BC20SD

    MOSFET 40A 600V

    Abstract: inverter circuit 200v to 100v mosfet 600V 10A ic
    Text: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF 4939A IRG4BC20SDPbF O-220AB MOSFET 40A 600V inverter circuit 200v to 100v mosfet 600V 10A ic

    Untitled

    Abstract: No abstract text available
    Text: PD - 94939A IRG4BC20SDPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF 4939A IRG4BC20SDPbF O-220AB

    Untitled

    Abstract: No abstract text available
    Text: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters


    Original     		PDF IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF JESD47F) O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF -95691A IRG4BC20SD-SPbF EIA-418.

    igbt 50V 420A

    Abstract: irg7ic irg7i 105MH
    Text: IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3 s, TJ max = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner


    Original     		PDF IRG7IC18FDPbF O-220AB igbt 50V 420A irg7ic irg7i 105MH

    AN-994

    Abstract: IRG4BC20SD-S
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD-S AN-994 IRG4BC20SD-S

    AN-994

    Abstract: IRG4BC20SD-S irg4bc
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD-S AN-994 IRG4BC20SD-S irg4bc

    10a 400V ultra fast diode d2pak

    Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF IRGS4064DPbF EIA-418. 10a 400V ultra fast diode d2pak IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V

    Untitled

    Abstract: No abstract text available
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF IRG4BC20SD-S

    AN-994

    Abstract: No abstract text available
    Text: PD -95691A IRG4BC20SD-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		PDF -95691A IRG4BC20SD-SPbF diodes57) EIA-418. AN-994

    SF10A400H

    Abstract: ultrafast diode 10a 400v sF10A400 400V 10A high efficiency rectifier
    Text: SF10A400H Ultrafast Recovery Rectifier 400V, 10A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency  Full lead Pb -free and RoHS compliant device


    Original     		PDF SF10A400H O-220F-2L SF10A400H KSD-D0Q007-001 ultrafast diode 10a 400v sF10A400 400V 10A high efficiency rectifier

    Untitled

    Abstract: No abstract text available
    Text: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


    Original     		PDF SF20A400HPR O-220F-3L SF20A400HPR KSD-D0O041-000

    SF20A400H

    Abstract: SF20A400HPI marking JC diode SF20A
    Text: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


    Original     		PDF SF20A400HPI O-220F-3L SF20A400HPI KSD-D0O027-001 SF20A400H marking JC diode SF20A

    SF20A400

    Abstract: No abstract text available
    Text: SF20A400HZ2 Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency 1  Dual common cathode rectifier construction


    Original     		PDF SF20A400HZ2 O-220F-3L SF20A400HPI KSD-D0O037-000 SF20A400

    SF20A400H

    Abstract: ultrafast diode 10a 400v SF20A400HPR
    Text: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency 1  Dual common cathode rectifier construction


    Original     		PDF SF20A400HPR O-220F-3L SF20A400HPR KSD-D0O041-000 SF20A400H ultrafast diode 10a 400v

    Untitled

    Abstract: No abstract text available
    Text: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction


    Original     		PDF SF20A400HPI O-220F-3L SF20A400HPI KSD-D0O027-001

    SF10S400D2

    Abstract: 400v10a
    Text: SF10S400D2 Ultrafast Recovery Rectifier 400V, 10A ULTRAFAST RECOVERY RECTIFIERS Features  High voltage and high reliability 4  Ultrafast reverse recovery time  High speed switching  Low power loss and High efficiency 1  Full lead Pb -free and RoHS compliant device


    Original     		PDF SF10S400D2 SF10S400D2 KSD-D6S003-001 400v10a

    SF20A400H

    Abstract: SF20A400HPI SF20A400
    Text: SF20A400HPI Semiconductor Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features y Low forward voltage drop and leakage current y Ultrafast reverse recovery time trr<30ns y Low power loss and high efficiency y Dual common cathode rectifier construction


    Original     		PDF SF20A400HPI O-220F-3L SF20A400HPI KSD-D0O027-000 SF20A400H SF20A400

    sf10a400h

    Abstract: No abstract text available
    Text: SF10A400H Ultrafast Recovery Rectifier 400V, 10A ULTRAFAST RECOVERY RECTIFIERS Features  High volt age and high reliabilit y  Ult rafast reverse recovery t im e  High speed swit ching  Low pow er loss and High efficiency  Full lead Pb -free and RoHS compliant device


    Original     		PDF SF10A400H O-220F-2L SF10A400H KSD-D0Q007-001

    Untitled

    Abstract: No abstract text available
    Text: SF10S400D2 Ultrafast Recovery Rectifier 400V, 10A ULTRAFAST RECOVERY RECTIFIERS Features  High volt age and high reliabilit y 4  Ult rafast reverse recovery t im e  High speed swit ching  Low pow er loss and High efficiency  Full lead Pb -free and RoHS compliant device


    Original     		PDF SF10S400D2 SF10S400D2 KSD-D6S003-002