ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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IRG4PH40UD2-EP
Abstract: 035H IRGP30B120KD-E
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
IRG4PH40UD2-EP
035H
IRGP30B120KD-E
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induction cooking
Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
induction cooking
035H
IRG4PH40UD2-EP
IRGP30B120KD-E
TO247AD package
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Untitled
Abstract: No abstract text available
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
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Untitled
Abstract: No abstract text available
Text: 2SF145400SYL 2SF145400SYL ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF145400SYL is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability;
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2SF145400SYL
2SF145400SYL
2SF145XXX
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Untitled
Abstract: No abstract text available
Text: 2SF162200SYL 2SF162200SYL ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF162200SYL is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability;
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2SF162200SYL
2SF162200SYL
2SF162XXX
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Untitled
Abstract: No abstract text available
Text: 2SF292200SYL 2SF292200SYL ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF292200SYL is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability;
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2SF292200SYL
2SF292200SYL
2SF292XXX
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Untitled
Abstract: No abstract text available
Text: 2SF292200CYY 2SF292200CYY ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF292200CYY is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability;
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2SF292200CYY
2SF292200CYY
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transistor* igbt 70A 300 V
Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
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IRG4PSH71UDPbF
40kHz
200kHz
Super-247
O-247
IRFPS37N50A
IRFPS37N50A
transistor* igbt 70A 300 V
70A 1200V IGBTS
Rectifier, 70A, 1000V
Super-247 Package
irg4psh71udp
diode 70A
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Untitled
Abstract: No abstract text available
Text: 2SF160400SYL 2SF160400SYL ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF160400SYL is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability;
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2SF160400SYL
2SF160400SYL
2SF160XXX
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Untitled
Abstract: No abstract text available
Text: 2SF180200SYL 2SF180200SYL ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF180200SYL is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability;
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2SF180200SYL
2SF180200SYL
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Untitled
Abstract: No abstract text available
Text: 2SF145200SYL 2SF145200SYL ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION Ø 2SF145200SYL is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ø Ultrafast recovery times; Ø High current capability; Ø High surge current capability;
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2SF145200SYL
2SF145200SYL
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IGBT IRG4PC50UD
Abstract: IRG4PC50UD
Text: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC50UD
O-247AC
IGBT IRG4PC50UD
IRG4PC50UD
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diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
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GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
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Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
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TRANSISTOR SMD 9bb
Abstract: TI 42A
Text: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
TRANSISTOR SMD 9bb
TI 42A
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1065 International S Rectifier IRGP450UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGP450UD2
O-247AC
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transistor C618
Abstract: c618 diode c617 transistor
Text: International jajRectffier_ IRGB420UD2 p d INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE -# .« » UltraFast CoPack IGBT Features V ces = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGB420UD2
O-22QAB
transistor C618
c618 diode
c617 transistor
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Untitled
Abstract: No abstract text available
Text: International I f â R Rectifier PD 9.1467D IRG4PC40UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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1467D
IRG4PC40UD
O-247AC
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irgph50ud
Abstract: IRGPH50u C732 TRANSISTOR transistor C732
Text: International îor Rectifier PD - 9.802A IRGPC50UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes
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IRGPC50UD2
DD2D521
O-247AC
C-732
GG20522
irgph50ud
IRGPH50u
C732 TRANSISTOR
transistor C732
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IRG4BC20KD
Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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IRG4BC20KD
T0220A8
IRG4BC20KD
IGBT IRG4BC20KD
IRGBC20KD2
transistor iqr
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Untitled
Abstract: No abstract text available
Text: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC10UD
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PC50UD
O-247AC
554S5
DDSfl51fl
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DIODE V97
Abstract: No abstract text available
Text: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .
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IRG4RC10UD
140ns
DIODE V97
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