0* dbm sot343
Abstract: No abstract text available
Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that provide the state of the art of RF silicon process to the
|
Original
|
START450
19dBm
42GHz
OT343
START450
OT343
START450TR
500MHz-5GHz
0* dbm sot343
|
PDF
|
ic 0744
Abstract: sot343
Text: START450 NPN Silicon RF Transistor PRELIMINARY DATA • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that
|
Original
|
START450
19dBm
42GHz
OT343
START450
OT343
START450TR
500MHz-5GHz
ic 0744
sot343
|
PDF
|
BF 295
Abstract: C785 transistor BF295 START450 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740
Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that
|
Original
|
START450
19dBm
42GHz
OT343
OT343
START450TR
START450
500MHz-5GHz
BF 295
C785 transistor
BF295
START450TR
31E12
nh TRANSISTOR
SPICE PARAMETER, STMicroelectronics, bipolar transistor
transistor C740
|
PDF
|
BF295
Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that
|
Original
|
START450
19dBm
42GHz
OT343
OT343
START450TR
START450
500MHz-5GHz
BF295
c785
C785 transistor
BF 295
transistor BF 451
START450TR
transistor C740
|
PDF
|
C785 transistor
Abstract: transistor C740 BF 245 B simulation model BF 245 A spice transistor c785
Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that
|
Original
|
START450
19dBm
42GHz
OT343
OT343
START450TR
START450
500MHz-5GHz
C785 transistor
transistor C740
BF 245 B simulation model
BF 245 A spice
transistor c785
|
PDF
|
BF 295
Abstract: transistor c785 C785 transistor transistor 139 BF NE 545 500MHz-5GHz ic 747 BF 245 B simulation model sot343 699 START450
Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that
|
Original
|
START450
19dBm
42GHz
OT343
OT343
START450TR
START450
BF 295
transistor c785
C785 transistor
transistor 139 BF
NE 545
500MHz-5GHz
ic 747
BF 245 B simulation model
sot343 699
|
PDF
|
START450
Abstract: No abstract text available
Text: START450 NPN Silicon RF Transistor TARGET DATA • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • MAXIMUM STABLE GAIN Gms=14dB @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that
|
Original
|
START450
19dBm
42GHz
OT343
OT343
START450
500MHz-5GHzions
|
PDF
|
HMC356LP3
Abstract: radar 77 ghz sige SC 2272 HMC373 HMC493LP3 2.5 ghz lna transistor HMC476MP86 HMC479MP86 HMC377QS16G HMC454ST89
Text: OFF-THE-SHELF AUTUMN 2003 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE SiGe GAIN BLOCKS NOW OFFERED! INSIDE. High Linearity Low Cost “Micro-X” MMIC Amplifiers to 6 GHz * 20 NEW PRODUCTS RELEASED! Product Showcase Ultra Wideband Driver Amp HMC464
|
Original
|
HMC464
OC-48
OC-192
ISO9001-2000
HMC356LP3
radar 77 ghz sige
SC 2272
HMC373
HMC493LP3
2.5 ghz lna transistor
HMC476MP86
HMC479MP86
HMC377QS16G
HMC454ST89
|
PDF
|
CA24
Abstract: SMA24
Text: A24 / SMA24 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses
|
Original
|
SMA24
MIL-STD-883
CA24
SMA24
|
PDF
|
CA24
Abstract: SMA24
Text: Cascadable Amplifier 5 to 1500 MHz A24/ SMA24 V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses
|
Original
|
SMA24
MIL-STD-883
CA24
SMA24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A24 / SMA24 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • HIGH GAIN - TWO STAGES: 20.0 dB TYP. • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <± 2.5O, 100-1500 MHz • LOW VSWR:<1.4:1 (TYP.) Description The A24 RF amplifier is a discrete hybrid design, which uses
|
Original
|
SMA24
MIL-STD-883
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cascadable Amplifier 10 to 1200 MHz A64/ SMA64 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses
|
Original
|
SMA64
MIL-STD-883
|
PDF
|
TRANSISTOR A64
Abstract: a64 TRANSISTOR SMA64 CA64
Text: A64 / SMA64 Cascadable Amplifier 10 to 1200 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • HIGH GAIN - TWO STAGES: 26 dB (TYP.) • ULTRA LOW PHASE DEVIATION FROM LINEARITY: <±2O, 100-1000 MHz • LOW VSWR: 1.2:1 (TYP.) Description The A64 RF amplifier is a discrete hybrid design, which uses
|
Original
|
SMA64
MIL-STD-883
TRANSISTOR A64
a64 TRANSISTOR
SMA64
CA64
|
PDF
|
acmd-7605
Abstract: AFEM 7813 ACPM-7381 ACMD-7612 Tower Mounted Amplifiers Dual Band wifi 5 watt amplifier circuit ACFM-7104 ALM-1412 ALM-2812 MGA-61563
Text: Wireless Semiconductor Solutions for RF and Microwave Communications Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect Avago Technologies Wireless Semiconductor Solutions for RF and Microwave Communications Accelerating Progress in
|
Original
|
AV00-0117EN
AV00-0138EN
acmd-7605
AFEM 7813
ACPM-7381
ACMD-7612
Tower Mounted Amplifiers Dual Band
wifi 5 watt amplifier circuit
ACFM-7104
ALM-1412
ALM-2812
MGA-61563
|
PDF
|
|
|
HSCH-9401
Abstract: e-phemt HMPS-282x downconvertor MGA-85563 MGA-87563 OC-768 MGA-52543 Agilent RF amp MGA-545P8
Text: Agilent Wireless Semiconductor Solutions for RF and Microwave Communications Semiconductor Solutions for the Connected World www.agilent.com/view/rf Agilent is Accelerating Progress in Wireless Communications. Mobile communications continue to grow in size and importance.
|
Original
|
7844EN
5988-7928EN
HSCH-9401
e-phemt
HMPS-282x
downconvertor
MGA-85563
MGA-87563
OC-768
MGA-52543
Agilent RF amp
MGA-545P8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Skyworks New and Featured Products David Seed Shuping Zhang MTTS 2014 Skyworks Solutions, Inc. Proprietary and Confidential Information Information 1 Skyworks At A Glance Skyworks Solutions is a Vertically Integrated provided of High Performance Analog and Mixed Signal Semiconductors Enabling Mobile Connectivity
|
Original
|
SKY85706-11
11n/ac
SKY73420-11
|
PDF
|
LNA ku-band
Abstract: No abstract text available
Text: BFR840L3RHESD Robust ultra low noise SiGe:C Bipolar RF Transistor in very small thin package Data Sheet Revision 1.0, 2012-04-19 RF & Protection Devices Edition 2012-04-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG
|
Original
|
BFR840L3RHESD
BFR840L3RHESD:
LNA ku-band
|
PDF
|
celeritek LNA
Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz
|
Original
|
CDQ0303-QS
24-May-06
CDQ0303-QS
celeritek LNA
microwave transducer
Tower Mounted Amplifiers Dual Band
CDQ0303-QS-0G0T
MCH185A101JK
PB-CDQ0303-QS-00A0
PB-CDQ0303-QS-00B0
CDQ0303-QS-0G00
Coil Craft 104
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz
|
Original
|
CDQ0303-QS
24-May-06
CDQ0303-QS
|
PDF
|
CDQ0303-QS
Abstract: CDQ0303-QS-0G00 CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0
Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS October 2007 - Rev 22-Oct-07 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain:
|
Original
|
CDQ0303-QS
22-Oct-07
CDQ0303-QS
CDQ0303-QS-0G00
CDQ0303-QS-0G0T
MCH185A101JK
PB-CDQ0303-QS-00A0
PB-CDQ0303-QS-00B0
|
PDF
|
Transistor W03
Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
Text: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high
|
Original
|
AN1465
START540
23dBm,
OT-343
SC-70)
30mils
Transistor W03
AN1465
ultra low noise NPN transistor
ultra linearity rf transistor
|
PDF
|
Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
Abstract: varactor
Text: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,
|
Original
|
889-A1,
17th-20th,
Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity
varactor
|
PDF
|
MRF947T1 TRANSISTOR
Abstract: motorola transistor 7439 8427 transistor Motorola 4718 TA 7176 IC 7814 transistor AN 7373 5812 MOTOROLA 2114 LC IC 7464 circuit
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F947T1 M RF947BT1 The RF Line NPN Silicon RF P o w er Tran sisto r D esigned fo r use in high gain, low noise s m a ll-sig n a l a m plifiers. This transistor features excellent broadband linearity, in an ultra-small surface mount
|
OCR Scan
|
F947T1
RF947BT1
Tem65
MRF947T1
MRF947BT1
MRF947T1 TRANSISTOR
motorola transistor 7439
8427 transistor
Motorola 4718
TA 7176 IC
7814 transistor
AN 7373
5812 MOTOROLA
2114 LC
IC 7464 circuit
|
PDF
|
DECT telephone schematic
Abstract: LP3J toko FM if transformers murata frequency mixer gsm high frequency mixer Active Double Balanced Mixer DECT siemens
Text: M MOTOROLA 1 - - - - "• MCI 3143 Advance Information Ultra Low Power DC 2.4 GHz Linear Mixer The MC13143 is a high compression linear mixer with single-ended RF input, differential IF output and differential LO inputs which consumes as little as 1.8 mW. A new circuit topology is used to achieve a high third order
|
OCR Scan
|
MC13143
MC13143
DECT telephone schematic
LP3J
toko FM if transformers
murata frequency mixer gsm
high frequency mixer
Active Double Balanced Mixer
DECT siemens
|
PDF
|
