UJT TRANSISTOR Search Results

UJT TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

UJT TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UJT 2n3904 Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45 Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24	Original		PDF
applications of ujt Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download Text: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)	Original	NTE6410 NTE6410 300mW applications of ujt ujt transistor UJT APPLICATION applications of ujt with circuits ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download	PDF
NTE4011B Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069 Text: NTE Electronics Transistors, Diodes, Rectifiers and ICs Silicon Unijunction Transistor UJT Stock No. Mfr.Õs Type Case Style 935-6196 935-6200 935-6202 6401 6409 6410 TO18 TO18 TO92 Maximum RMS Emitter Current Intrinsic Stand Off Ratio Interbase Resistance	Original	TE7475 NTE992 NTE7476 NTE2013 NTE7486 NTE4001B NTE7490 NTE4011B NTE74121 NTE4013B NTE955M NTE956 NTE4081B NTE931 NTE4069	PDF
NT101 Abstract: N13T1 N13T2 2NS027 NT102 2NS120 013T3 PROGRAMMABLE UJT N13T-1 Mpu6027 Text: PROGRAMMABLE UJT Item Number Part Number Manufacturer Po Max VGKF Max W (V) IT Max (A) Pulse ITRM Max @ Width (A) (s) IGAO Max (s) VT Max (A) Vs @ Test (V) Operating Temperature (Oe) Min Max Package Style Programmable Unijunction Transistors, (PUTs) 5 10	Original	NT101 NT102 TN41A TN41B MTU21 MTU22 2NSl17 2NSl18 BRY39 013T1 N13T1 N13T2 2NS027 2NS120 013T3 PROGRAMMABLE UJT N13T-1 Mpu6027	PDF
ujt transistor Abstract: transistor 2n4852 applications of ujt 2N4851 UJT 2N4851 2N4853 2N4852 UJT APPLICATION unijunction transistor UJT 2N4852 Text: 2N4851 2N4852 2N4853 PN SILICON UNIJUNCTION TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4851, 2N4852, and 2N4853 are Silicon PN Unijunction Transistors designed for timing, sensing, and trigger circuits. MARKING: FULL PART NUMBER	Original	2N4851 2N4852 2N4853 2N4851, 2N4852, 2N4853 PRR10pps) 2N4852) 2N4853) ujt transistor transistor 2n4852 applications of ujt 2N4851 UJT 2N4851 2N4852 UJT APPLICATION unijunction transistor UJT 2N4852	PDF
UJT 2N4871 Abstract: No abstract text available Text: DIGITRON SEMICONDUCTORS 2N4870-2N4871 PN UNIJUNCTION TRANSISTORS MAXIMUM RATINGS Rating RMS power dissipation 1 RMS emitter current Peak pulse emitter current (2) Symbol Value Unit PD 300 mW Ie 50 mA ie 1.5 Amp Emitter reverse voltage VB2E 30 Volts Interbase voltage †	Original	2N4870-2N4871 04mW/Â 10PPS. UJT 2N4871	PDF
diac SBS 14 Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113 Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number Case Style Diagram Number RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <pA) lE V bb Pd •e o Intrinsic Stand Off Ratio Interbase	OCR Scan	175mA T092/T098 9h/127b	PDF
NTE+6402 Abstract: No abstract text available Text: SPECIAL DEVICES SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number 6400 6400A 6401 6409 6410 Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <(lA) Ie VBB Pd •eo	OCR Scan		PDF
2N6120 Abstract: applications of ujt 2N6119 PN6119 PN6119-18R PN6120 PN6120-18R PROGRAMMABLE UJT 2N6119-2N6120 Text: Data Sheet central PN6119-18R PN6120-18R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNPN SILICON PROGRAMMABLE UJT Sem iconductor Corp. JEDEC T0-92-18R CASE (AGK) Manufacturers of World Class Discrete Semiconductors	OCR Scan	PN6119-18R PN6120-18R T0-92-18R PN6120-18R 2N6119, 2N6120 100iis) PN6119' PN6120 10kfi applications of ujt 2N6119 PN6119 PROGRAMMABLE UJT 2N6119-2N6120	PDF
DIAC 1n5758 Abstract: 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760 Text: Trigger Devices Trigger devices come under a variety o f d iffe re n t classifications, w ith somewhat d iffe rin g characteristics — U n ijun ctio n Transistors U nidirectional Switches B idirectional Switches Bilateral Triggers PUT D IA C SBS SUS UJT 4 -Layer Diodes	OCR Scan	1N5758/MPT20 1N5760/MPT28 1N5761/MPT32 1N5762 1N5758A 1N5759A 1N5760A 1N5761A 1N5762A MBS4991 DIAC 1n5758 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760	PDF
UJT 2N2646 Abstract: 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt ujt timer CIRCUIT applications of ujt with circuits Text: g .— , a . Wide Range of Sensitivities S lC S lQ D 3 L 2 W D © @ •■■ ,nPu t C haracteristics fo r M o st A pplications . Industry Standards, w ith a va riety of C ustom S pecifications available. UNIJUNCTION TRANSISTORS - UJT) Device	OCR Scan	O-226AA 2N2646 2A-01 2N2647 O-220AB 2N6027 2N6028 MBS4991 O-226AA UJT 2N2646 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt ujt timer CIRCUIT applications of ujt with circuits	PDF
UJT 2N2646 Abstract: 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor Text: Silicon Unidirectional Switch - SUS Similar to 4-Layer Diodes, but has gate electrode that permits synchronization. V s V olts Nom Device Type Plastic Case 29-02 I TO-92 MUS4987 M US4988 's Min. Max. 6.0 7.5 10 9.0 jUA Max. m A M ax. ^ 1.5 0.5 500 150 Unijunction Transistors - UJT	OCR Scan	ITO-92) MUS4987 MUS4988 IeB20 2A-01 2N4870 2N4871 2N2646 2N2647 2N4851 UJT 2N2646 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor	PDF
ECMC Abstract: ujt transistor ECG6403 Silicon unilateral switch 6404a ECG6400B C 1136 Ecg 584 Text: Special Purpose Devices !^ j b2 Silicon Unijunction Transistors UJT ^ R ß B O (Kohm s) »? E CG Type iE mA M in ECG6400B 50 0.54-0.67 M ax M in 4 Mex Inter Base Vo lts PD mW 12 55 450 \l lEO Am ps IV (Min) mA 1 Max 8 Package/ Outline No. TO-39 Fig. S1	OCR Scan	ECG6400B ECG6403 ECMC ujt transistor Silicon unilateral switch 6404a C 1136 Ecg 584	PDF

Philips ECG 6402 Abstract: ECG6410 ECG6402 ECG6401 ECG6405 ECG6409 ECG6404 UJT 43 Programmable Unijunction Transistor Philips ECG ECG6400B Text: PHI L IP S E C 6 INC 54E » • bbS3TEfl D0 D7 2S S G32 Special Purpose Devices Silicon Unijunction Transistors UJT 3 n R B B O (Kohm s) P ackage/ Outline No. M in M ax Inter Base V olts PD mW n A m ps ■EO IV (M in) mA 0 .5 4 -0 .6 7 4 12 55 450 1 Max	OCR Scan	bbS31Efl ECG6400B ECG6401 ECG6409 ECG6410 ECG6402 ECG6404 ECG6405 Philips ECG 6402 UJT 43 Programmable Unijunction Transistor Philips ECG	PDF
2n2646 ujt Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE Text: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0	OCR Scan	2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56 2N3905 MPS-A93 2N3906 MPS-A92 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE	PDF
SCR CONTROL BY PUT CIRCUIT Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1 Text: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.	OCR Scan	2IM5810-6Q17 GES5810-6017 2N6027 2N6028 2N2926 SCR CONTROL BY PUT CIRCUIT ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1	PDF
2n2646 equivalent Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can	OCR Scan	2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits	PDF
transistor 123 DL Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT Text: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current	OCR Scan	2N6027 2N6028, GES6027, GES6028 2N6027, 2N6028 GES6028 92CS-4234Â transistor 123 DL equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT	PDF
ujt trigger circuit Abstract: ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 2N6028 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028 Text: "Öl G E SOLID STATE 3875081 G E SOLID STATE DE'] 3fl7SDfll 0D1Ö01Ö t. 01E 18018 D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: Applications: • Planar Passivated Structure	OCR Scan	2N6027, 2N6028, GES6027, GES6028 2N6028 14--Hour ujt trigger circuit ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028	PDF
TN41A Abstract: TN41 Unit junction transistor UJT ujt unijunction transistor Text: PROGRAMMABLE UNIJUNCTION TRANSISTOR TN41 A,B SILICON PLANAR TYPE THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, Unit in mm PULSER AND TIMMER APPLICATIONS. FEATURES : . Programmable Item : RßB, 9 » lv and IP . low leakage Current : [GAO= 10nA(Max.) . High Pulse Output Voltage	OCR Scan	100nA TN41A TN41B 100/is TN41A TN41 Unit junction transistor UJT ujt unijunction transistor	PDF
transistor c s z 44 v Abstract: C 34 F PH3134 Text: A # anf AeM P company * Radar Pulsed Power Transistor, 25W, IOOjis Pulse, 10% Duty 3.1 - 3.4 G H z PH3134-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figu ration B roadb an d C lass C O p eratio n	OCR Scan	PH3134-25M TT50M50A ATC100A transistor c s z 44 v C 34 F PH3134	PDF
motorola eb20 Abstract: silicon unijunction transistor 2n5431 Text: motorola sc diodes/opto I sse d • t.3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW DESIGNS 1 ^3 7 ^1 2N5431 P N U nijunction T ran sisto r Silicon Annular Unijunction Transistor . i characterized prim arily for lo w interbase-voltage operation in se n sin g, pulse	OCR Scan	2N5431 Vf32B1CHARAC T-37-JI motorola eb20 silicon unijunction transistor 2n5431	PDF
Unit junction transistor UJT Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc Text: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse	OCR Scan	b3b72SS 2N5431 2A-01 b3b72SS 10flA Unit junction transistor UJT ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc	PDF

UJT TRANSISTOR Search Results

UJT TRANSISTOR Result Highlights (5)

UJT TRANSISTOR Datasheets Context Search

UJT 2n3904

applications of ujt

NTE4011B

NT101

ujt transistor

UJT 2N4871

diac SBS 14

Untitled

NTE+6402

2N6120

DIAC 1n5758

UJT 2N2646

UJT 2N2646

ECMC

Philips ECG 6402

2n2646 ujt

SCR CONTROL BY PUT CIRCUIT

2n2646 equivalent

transistor 123 DL

ujt trigger circuit

TN41A

transistor c s z 44 v

motorola eb20

Unit junction transistor UJT