GW40V60DF
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V
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STGW60H65DFB
STGWT60H65DFB
O-247
DocID024365
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GW60H65DFB
Abstract: No abstract text available
Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V
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STGW60H65DFB
STGWT60H65DFB
O-247
DocID024365
GW60H65DFB
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GW40V60DF
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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Original
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PDF
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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Original
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PDF
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Very high speed switching series • Tail-less switching off 2 3 3 1 2 1 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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Original
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PDF
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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PDF
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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Untitled
Abstract: No abstract text available
Text: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V
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STGW40H65DFB
STGWT40H65DFB
O-247
SC12850
DocID024363
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GWT30V60DF
Abstract: GW30V60DF
Text: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 1 1 D²PAK TO-220
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STGB30V60DF,
STGP30V60DF,
STGW30V60DF,
STGWT30V60DF
O-220
O-247
DocID024361
GWT30V60DF
GW30V60DF
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Untitled
Abstract: No abstract text available
Text: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220
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STGB30V60DF,
STGP30V60DF,
STGW30V60DF,
STGWT30V60DF
O-220
O-247
DocID024361
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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AX057
Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
Text: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code
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AX057
AX057
marking code 9d
D1NL4
DATE CODE FOR NITM
MU diode MARKING CODE
l4 marking code diode
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DIODE marking s6 code
Abstract: DIODE marking TY
Text: Schottky Barrier Diode Axial Diode Wtm D1NS6 OUTLINE Package : AX057 Unit-mm Weight 0.19g Typ 60 V 1A Feature UJ 02.6 • Tj=150°C • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • P r r s m Rating • Switching Regulator • DC/DC nyjt- l? • m
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AX057
DIODE marking s6 code
DIODE marking TY
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marking 2U diode
Abstract: marking 2U 20 diode diode marking code 2U diode marking 2U marking code DIODE 2U diode 2u marking code marking 2U 40 diode 2U marking code diode
Text: Super Fast Recovery Diode Axial Diode W tm D1NL20U OUTLINE Package : AX057 U nit-m m W eight 0.19g Typ 200V 1A Feature UJ 02.6 • Low Noise • m s 'ix • trr= 3 5 n s • trr=35ns 0> -M - Main Use • Fly Wheel • ÍM .0 A J M 3 • Home A ppliance, Office Autom ation, Lighting
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D1NL20U
AX057
marking 2U diode
marking 2U 20 diode
diode marking code 2U
diode marking 2U
marking code DIODE 2U
diode 2u marking code
marking 2U 40 diode
2U marking code diode
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j172
Abstract: D1NJ10 AX057
Text: Schottky Barrier Diode Axial Diode W D 1 N J 10 t m O U T L IN E Package : AX057 unit:mm W eight 0.19g Typ t— in o *1 100V 1A 3- Feature UJ • Tj=150°C • Tj=150°C * 2 • f i l R = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away (!>
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D1NJ10
AX057
waveli50Hz
j172
D1NJ10
AX057
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D1NK60
Abstract: AX057 diode MARKING CODE K6 WMM marking code
Text: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX057 D1NK60 U n it-m m W e ig h t 0 .1 9 g T y p 600V 0.8A UJ Feature 02.6 • High Voltage Super FRD • H lf f iF R D • trr=75ns • ® V f=1.3V • trr=75ns • Low V f=1 ,3V 0> Main Use
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D1NK60
AX057
waveli50Hz
D1NK60
AX057
diode MARKING CODE K6
WMM marking code
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diode marking f6
Abstract: No abstract text available
Text: Super Fast Recovery Diode Axial Diode Wtm D1NF60 OUTLINE U nit-m m W eight 0.19g Typ Package : AX057 600V 0.8A UJ Feature • H lff iF R D • H igh V o lta g e S u p e r FRD • ñ S 'f X • trr = 4 0 0 n s • L o w N oise 02.6 • trr= 4 0 0 n s -M -
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D1NF60
AX057
110ms
diode marking f6
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D1NK60
Abstract: AX057 0251K
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package I AX057 D1NK60 ♦ 1 6 0 0 V 0 .8 A i UJ Feature • íiü íE F R D • trr=75ns • V f=1.3V U n it : m m W e ig h t 0 .1 9 k T y p 02.6 • High Voltage Super FRD *2 • trr=75ns • Low V f=1 .3V
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D1NK60
AX057
50e0-52mm
J533-1
CJ533-1
D1NK60
AX057
0251K
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Axial Diode W tm D1NS4 OUTLINE U n it-m m Package : AX057 W e ig h t 0 .1 9 g T y p *i 4 0 V 1A Feature UJ 02.6 • Tj=150°C • T j=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P r r s m Rating 11)=- Main Use • Sw itching Regulator
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AX057
i50Hz
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Untitled
Abstract: No abstract text available
Text: Diode, Schottky barrier, leaded RB100A Dimensions U n its : mm These cylindrical mold-type diodes are suitable for lead mounting on printed circuit boards. CATHODE BAND Features =H-fl <£0 . 6 ± 0, 1 • available in MSR package • part marking, see following table
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RB100A
RB100A
0D155DE
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GENERAL SEMICONDUCTOR MARKING UJ
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING «m m type double diode,especially designed for high speed switching application.
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MC2836
MC2836
GENERAL SEMICONDUCTOR MARKING UJ
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fairchild 1P
Abstract: No abstract text available
Text: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.
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MMBD1201
OT-23
MMBD1204A
MMBD1203
MMBD1205A
fairchild 1P
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Untitled
Abstract: No abstract text available
Text: r — SB D Anode common 20A 120VTjw150V FRHS20A12 Fully Molded similar to TO-22QAB ttfl* 0 * ^ Nihon Inter Electronics Corporation Specification mm Construction ' > 3 -y h y T jfs f Schottky Barrier Diode K m Application High Frequency Rectification MAXIMUM RATINGS T a = 25'C: Unless otherwise specified
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120VTjw150V
O-22QAB
FRHS20A12
20mVRMs
FRHS20A12
FRHS20Ar
UL94V-0
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