Untitled
Abstract: No abstract text available
Text: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90K
O-220
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APT27GA90K
Abstract: MIC4452
Text: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90K
O-220
shift126)
APT27GA90K
MIC4452
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APT10035LLL
Abstract: APT27GA90BD15 MIC4452 600V180
Text: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90BD15
APT10035LLL
APT27GA90BD15
MIC4452
600V180
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full wave BRIDGE RECTIFIER
Abstract: No abstract text available
Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90BD15
APT27GA90SD15
Ver13
full wave BRIDGE RECTIFIER
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APT27GA90BD15
Abstract: APT27GA90SD15 MIC4452 SD15
Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90BD15
APT27GA90SD15
APT27GA90BD15
APT27GA90SD15
MIC4452
SD15
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APT10035LLL
Abstract: APT27GA90BD15 MIC4452
Text: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90BD15
APT10035LLL
APT27GA90BD15
MIC4452
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IGBT 900v
Abstract: IGBT microsemi APT27GA90K gate DRIVER IGBT MIC4452
Text: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90K
O-220
shift126)
IGBT 900v
IGBT microsemi
APT27GA90K
gate DRIVER IGBT
MIC4452
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APT10035LLL
Abstract: APT27GA90BD15 MIC4452 BY 126 DIODE DYNAMIC RESISTANCE 14A 600V TO247 IGBT 14A144
Text: APT27GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90BD15
APT10035LLL
APT27GA90BD15
MIC4452
BY 126 DIODE DYNAMIC RESISTANCE
14A 600V TO247 IGBT
14A144
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Untitled
Abstract: No abstract text available
Text: APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90K
O-220
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Untitled
Abstract: No abstract text available
Text: APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT27GA90BD15
APT27GA90SD15
APP11
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MOSFET IRF 630 Datasheet
Abstract: irfr1018epbf transistor IRF 630 AN-994
Text: PD - 97129 IRFR1018EPbF IRFU1018EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic
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IRFR1018EPbF
IRFU1018EPbF
EIA-481
EIA-541.
EIA-481.
MOSFET IRF 630 Datasheet
irfr1018epbf
transistor IRF 630
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.
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IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
O-220AB
O-262
EIA-418.
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IRF1018E
Abstract: IRF1018EPbF transistor IRF 630 AN-994
Text: PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.
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IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
O-220AB
O-262
EIA-418.
IRF1018E
IRF1018EPbF
transistor IRF 630
AN-994
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Untitled
Abstract: No abstract text available
Text: PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G S Benefits l Improved Gate, Avalanche and Dynamic
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7129A
IRFR1018EPbF
IRFU1018EPbF
Silico41
EIA-481
EIA-541.
EIA-481.
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AN-994
Abstract: AUIRFR1018E P-Channel MOSFET 600v
Text: PD - 97685 AUTOMOTIVE GRADE AUIRFR1018E HEXFET Power MOSFET Features ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching
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AUIRFR1018E
AN-994
AUIRFR1018E
P-Channel MOSFET 600v
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AUIRF
Abstract: IRF1018ES AUIRF1018E
Text: PD - 97711 AUTOMOTIVE GRADE AUIRF1018ES Features ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRF1018ES
AUIRF
IRF1018ES
AUIRF1018E
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Untitled
Abstract: No abstract text available
Text: PD - 97711 AUTOMOTIVE GRADE AUIRF1018ES Features ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRF1018ES
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Untitled
Abstract: No abstract text available
Text: PD - 97685 AUTOMOTIVE GRADE AUIRFR1018E HEXFET Power MOSFET Features ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching
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AUIRFR1018E
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MB81C79A
Abstract: MB81C79A-35 mb81c79 MB81C79A-45 N0-22 MB81C79A-45-W 3741B
Text: FUJITSU MICROELECTRONICS 47E D 3 7 4 T ? h 2 1 • T Ì 4 6 - 2 3 April 1990 Edition 3.0 FUjflSU DATA SHEET M B 8 1 C 79A -35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79A is a 8,192 words x 9 bits static random access memory
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72K-BIT
MB81C79A
LCC-32
32-PAD
LCC-32C
14ITYP
C32011S-3C
MB81C79A-35
mb81c79
MB81C79A-45
N0-22
MB81C79A-45-W
3741B
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bzx79 2v7
Abstract: bzx79 6v2 BZX Philips Voltage Regulator Diodes Philips Semiconductors Voltage Regulator Diodes 1 bzx79 philips bzx c12 philips BZX "Voltage Regulator Diodes" BZX79
Text: Philips Semiconductors Product specification Voltage regulator diodes BZX79 series FEATURES DESCRIPTION • Total power dissipation: max. 500 mW Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 DO-35 packages. The diodes are available in the normalized E24
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BZX79
DO-35)
BZX79-A)
BZX79-B)
BZX79-F)
BZX79-C)
7110fl2b
01DEL3E
bzx79 2v7
bzx79 6v2
BZX Philips
Voltage Regulator Diodes
Philips Semiconductors Voltage Regulator Diodes 1
bzx79 philips
bzx c12
philips BZX
"Voltage Regulator Diodes"
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MB81C79A-35
Abstract: mb81c79a-45 mb81c79
Text: April 1990 Editbn 3.0 FUJITSU DATA SHEET M B 8 1C79A-35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu M B81C79A Is a 8,192 w ords x 9 bits static random access memory fabricated with a CM OS process. The m emory uses asynchronous circuitry and may be
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1C79A-35/-45
72K-BIT
B81C79A
LCC-32C-A02
32-PAD
LCC-32C-A02)
MB81C79A-35
mb81c79a-45
mb81c79
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BL-4C
Abstract: No abstract text available
Text: D R A W I N G M A D E IN T H I R D A N G L E P R O J E C T I O N T H JS DRAW ING I S U N P U B L IS H E D . R E L E A SE D FO R P U B L IC A T IO N COPYRIGHT 1 3 BY A M P INCORPORATED, HARR ISSU R G , P A . A L L JNTERNAT JONAL R IG H TS R ESERV ED. A M P PRODUCTS MA Y B E COVERED SV J. 5. AND FO R EIG N PA TEN TS AMD/OR PATENTS PEN D IN G .
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AR-2553
J4-0CT-94
tJ722/pj
370J3/u
BL-4C
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aj 312
Abstract: t87a
Text: PRAVIMS HADE W THIRD AW3LE PROJECTION HIS DRAUIH3 13 UNPUBLISHED. I RELE ftEVtSICIWS REDWN £ REV PER A J - 4 5 6 0 R EV PER A J - 4 5 9 3 O BS - 3 . - 4 £ - 5 PER A J - 4 8 3 3 LETE ALL DA5M # ‘S EXCEPT f-1 PER ECW AJ-4663~ R E L E A SE 2 - 2 2 1 2 S S - 0 S 2 -2 2 1 2 6 5 -1
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AJ-4663~
aj 312
t87a
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Untitled
Abstract: No abstract text available
Text: F eatu re s Se rie s 388 Potentiometer 1/2 in. sq., .5 Walt • S m a ll size - 1/2 in. square S e rie s 3 8 9 Potentiometer • Stackable - up to 8 m odules 1/2 in. sq., 1 Watt • Sw itches - rotary, p u sh -p u ll, push-m om entary, m ulti position and schadow .
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