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    UJ 78A Search Results

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    UJ 78A Price and Stock

    Analog Devices Inc AD7278AUJZ-500RL7

    Analog to Digital Converters - ADC 8-Bit 3MSPS SAR ADC I.C.
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    Mouser Electronics AD7278AUJZ-500RL7 2,304
    • 1 $7.52
    • 10 $6.06
    • 100 $4.57
    • 1000 $3.74
    • 10000 $3.74
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    NXP Semiconductors UJA1078ATW/5V0/WDJ

    CAN Interface IC High-speed CAN/dual LIN core system basis chip
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    Mouser Electronics UJA1078ATW/5V0/WDJ 1,980
    • 1 $4.66
    • 10 $4.13
    • 100 $3.81
    • 1000 $2.99
    • 10000 $2.95
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    NXP Semiconductors UJA1078ATW/5V0/1J

    CAN Interface IC High-speed CAN/dual LIN core system basis chip
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    Mouser Electronics UJA1078ATW/5V0/1J
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    NXP Semiconductors UJA1078ATW/3V3/1J

    CAN Interface IC High-speed CAN/dual LIN core system basis chip
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UJA1078ATW/3V3/1J
    • 1 -
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    • 10000 $2.85
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    NXP Semiconductors UJA1078ATW/3V3/WDJ

    CAN Interface IC High-speed CAN/dual LIN core system basis chip
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics UJA1078ATW/3V3/WDJ
    • 1 -
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    • 100 -
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    • 10000 $2.99
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    UJ 78A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD

    IRG7PH42UD1PBF

    Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
    Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF 7480A IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A

    irg7ph42upbf

    Abstract: marking code 5339
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD marking code 5339

    IRG7PH42UD1-EP

    Abstract: IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT
    Text: PD - 97480 IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA


    Original     		PDF IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk O-247AD IRG7PH42UD1-EP IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT

    IRG7PH42UD1M

    Abstract: 30A, 600v RECTIFIER DIODE
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		PDF IRG7PH42UD1M 1300Vpk D-020D IRG7PH42UD1M 30A, 600v RECTIFIER DIODE

    IRG7PH42U

    Abstract: No abstract text available
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		PDF IRG7PH42UD1M 1300Vpk IRG7PH42U

    IRG7PH42U

    Abstract: No abstract text available
    Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		PDF IRG7PH42UD1M 1300Vpk IRFPE30 O-247AC IRG7PH42U

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • VCES = 1200V C Low VCE ON trench IGBT technology Low switching losses


    Original     		PDF IRG7PH42UD1PbF IRG7PH42UD1-EP 1300Vpk JESD47F) O-247AC O-247AD

    IRG7PH42U

    Abstract: No abstract text available
    Text: IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode


    Original     		PDF IRG7PH42UD1MPbF 1300Vpk O-247AD IRG7PH42UD1M" IRG7PH42UD1MPbF" IRG7PH42U

    48C24

    Abstract: f4737 bfe 9ca 3C44C 34h737 S42B BA3442
    Text: 123456 12345267621842897A5BC9DDB5 7EF37B3B57D91DB57217FDA627CB135B67 7898ABCDD9A EDFD8A 7D9F D89D 123 4 56789A 4 BC4 D3ECFC4E3454 6E3 4 7F3CCF4 3BE 4 FEC34 33FEBC 4 123 4 5678 9A4BC43CBE34F4F34 E3 4 C3324


    Original     		PDF 12345267621842897A5BC9DDB5 7D91DB5721 FDA62 7CB135B67 7898ABCDD9A 6789A 23CBC 23456789A4 C34BE4 44D3ECF 48C24 f4737 bfe 9ca 3C44C 34h737 S42B BA3442

    AUFP4004

    Abstract: No abstract text available
    Text: PD - 96407 AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *


    Original     		PDF AUIRFP4004 AUFP4004

    AUFP4004

    Abstract: No abstract text available
    Text: PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *


    Original     		PDF 6407A AUIRFP4004 AUFP4004

    AUFS3004

    Abstract: No abstract text available
    Text: PD - 96400 AUTOMOTIVE GRADE AUIRFS3004 AUIRFSL3004 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *


    Original     		PDF AUIRFS3004 AUIRFSL3004 AUFS3004

    marking code 117A

    Abstract: No abstract text available
    Text: PD - 97716 AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● VDSS 40V RDS on typ. 1.4mΩ max. 1.7mΩ ID (Silicon Limited) 343A ID (Package Limited) 195A D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating


    Original     		PDF AUIRLS3034 marking code 117A

    AUIRLS3034

    Abstract: marking code 117A AEC-Q1010
    Text: PD - 97716A AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● VDSS 40V RDS on typ. 1.4m max. 1.7m ID (Silicon Limited) 343A ID (Package Limited) 195A D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating


    Original     		PDF 7716A AUIRLS3034 AUIRLS3034 marking code 117A AEC-Q1010

    siemens igbt

    Abstract: No abstract text available
    Text: SIEMENS BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate BSM 50 GAL 120 DN2 UJ Ï? Type 1c 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70


    OCR Scan     		PDF S00022 siemens igbt

    drum machine sound ic

    Abstract: m6388 xk 22e E2D5050-27-50 drum sound ic 7737C 6B6g WCT - A24 birthday
    Text: E2D5050-27-50 O K I Semiconductor_ GENERAL-PURPOSE ROM CODE LIBRARY Built-in m ask R O M voice synthesis IC s and serial voice RO M s are m anufactured according to custom er orders. The follow ing standard products are also available fo r general use and for sound


    OCR Scan     		PDF E2D5050-27-50 MSM6375 MSM6372-100 MSM6372-119 MSM6373-308 MSM6373-329 MSM6374-Q06 MSM6374-007 MSM6374-519 MSM6374-544 drum machine sound ic m6388 xk 22e E2D5050-27-50 drum sound ic 7737C 6B6g WCT - A24 birthday

    KL SN 102 94v-0

    Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
    Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results


    OCR Scan     		PDF

    P65a

    Abstract: No abstract text available
    Text: 3KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE- 5 . 0 to 170 Volts 3000 Watt Peak Pulse Power P -6 0 0 FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 9 4 V -0 • Glass passivated junction • 3000W Peak Pulse Power


    OCR Scan     		PDF 3KP18A 3KP26A 3KP30A 3KP38 3KP36A 3KP43A 3KP51 3KP58 3KP60A 3KP64 P65a

    diode SM 78A

    Abstract: AR-761 anawriter
    Text: O K I Semiconductor MSM6378A/MSM6379 OTP BUILT-IN VOICE SYNTHESIS LSI GENERAL DESCRIPTION The M SM6378A/MSM6379 is an ADPCM voice synthesis LSI w ith a built-in one-tim e PROM OTP . The MSM6378A/MSM6379 reproduces the speech data, w hich the user h as a n a ly z e d a n d r e c o rd e d u s in g th e


    OCR Scan     		PDF MSM6378A/MSM6379 SM6378A/MSM6379 MSM6378A/MSM6379 512Kbit 500Kbits MSM6378A: 256Kbit 244bits 12bit diode SM 78A AR-761 anawriter

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SOUND PROCESSORS M51598FP PREAMPLIFIER FOR OPTICAL PICKUP DESCRIPTION The M51598FP is an optical pickup preamplifier for compact PIN CONFIGURATION TOP VIEW disc players. It consist of 5 l-V amplifier which convert amplifier, FE (focus error) amplifier, TE (tracking error)


    OCR Scan     		PDF M51598FP M51598FP 60kHz 500kHz

    diode U1J

    Abstract: NE83Q92 NE83Q92A NE83Q92D NE83Q92N NE83Q93
    Text: Philips Semiconductors Data Communications Products " • bbS3=124 o c m b f l l 31fl ■ SIC3 Preliminary specification “ ■— ■■■ m m m m m m w— mmm Low-power coaxial Ethernet transceiver NE83Q92 DESCRIPTION FEATURES The NE83Q92 is a low power coaxial


    OCR Scan     		PDF bb53T24 NE83Q92 NE83Q92 10base5) 10base2) 100ns diode U1J NE83Q92A NE83Q92D NE83Q92N NE83Q93

    Untitled

    Abstract: No abstract text available
    Text: CD22M3493 HARRIS S E M I C O N D U C T O R 1 2 x 8 x 1 BiMOS-E Crosspoint Switch July 1994 Description Features 96 Analog Switches Low R on Guaranteed Ron Matching Analog Signal Input Voltage Equal to the Supply Voltage W ide Operating Voltage. 4V to 16V


    OCR Scan     		PDF CD22M3493 M3493, 78A093A, MT8812 CD22M3493 5M-1982.