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    Abstract: No abstract text available
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD

    irg7ph42upbf

    Abstract: marking code 5339
    Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original     		PDF 96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD marking code 5339