BLT50
Abstract: ptfe trimmer philips 100 pf film dielectric trimmer BLT50,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. BLT50 QUICK REFERENCE DATA
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BLT50
OT223
OT223
BLT50
771-BLT50115
ptfe trimmer philips 100 pf
film dielectric trimmer
BLT50,115
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MDA380
Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLU99
BLU99/SL
BLU99
OT122A)
BLU99/SL
MDA380
4312 020 36642
MDA385
TRANSISTOR SL 100
"2222 352"
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transistor D 2578
Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting
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BLW90
SC08a
transistor D 2578
BLW90
transistor Common Base configuration
transistor rf m 1104
4312 020 36640
transistor 4312
philips carbon film resistor
UHF TRANSISTOR
UHF transistor GHz
philips transistor handbook
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BLX94C
Abstract: MBH100 BLX94
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended
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BLX94C
OT122A
OT122A
BLX94C
MBH100
BLX94
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358 SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
BLT80
OT223
MAM043
cir2724825
SCDS48
127061/1200/02/pp12
771-BLT80-T/R
358 SMD transistor
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mda324
Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLU30/12
OT-119)
mda324
MDA325
transistor D 2395
4313-020-15170
MDA327
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j692
Abstract: MRF846 stub tuner matching transistor equivalent table chart NIPPON CAPACITORS AN923 J658 uhf amplifier design Transistor transistor zo 109 5Bp transistor
Text: Order this document by AN923/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN923 800 MHz TEST FIXTURE DESIGN Prepared by: DAN MOLINE Product Manager Landmobile Power Products Although this article presents techniques for the general case of UHF-800 MHz circuit design, the emphasis is placed
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AN923/D
AN923
UHF-800
j692
MRF846
stub tuner matching
transistor equivalent table chart
NIPPON CAPACITORS
AN923
J658
uhf amplifier design Transistor
transistor zo 109
5Bp transistor
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SMD CAPACITOR L29
Abstract: Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B
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BLV897
OT324B
SCA55
127067/00/02/pp12
SMD CAPACITOR L29
Philips 2222-581
SMD CAPACITOR L27
BLV897
Philips capacitor 166
ferroxcube 4322
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ceramic capacitor 39 pf
Abstract: AEA213 MEA208 IEC134
Text: Philips Sem iconduct o r s P H IL IP S 7 1 1 0 fl5 b IN T E R N A T IO N A L □ □ b 5 b ^ ^ ^ ^ T ^ ^ ^ ^ n N ^ ^ r o d u c t^ s p e c ific a tiO T bSE D UHF power transistor FEATURES Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures
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7110flgb
BLU10/12
OT122
-SOT122A
MEA208
ceramic capacitor 39 pf
AEA213
MEA208
IEC134
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TRIMMER capacitor 5-60 pF
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and
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R35-3
TRIMMER capacitor 5-60 pF
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watson fc-130
Abstract: FC-130 4.1943MHZ
Text: UlffsON FC-130 Frequency Counter INTRODUCTION The Watson FC-130 hand-held frequency counter is our most popular counter. Even advanced features such as field strength measurement are incorporated. It is a compact, true pocket size, test instrument designed for ease of use and dependable performance. Supplied as a complete package with internal
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FC-130
FC-130
600mAH
300mA
27MHz
150MHz
800MHz
100mV
15dBm
watson fc-130
4.1943MHZ
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2SC1200
Abstract: feed through capacitor
Text: SILICON NPN EPITAXIAL PLANAR TRANSISTOR O UHF - S ^ K I Î J Ü S f f l O UHF ù o il ft X UHF~S Band Power A m p lifie r A p p lic a tio n s . UHF-S Band O s c il l a t o r A p p lic a tio n s . * & f t ^ £ S g T =r V* mm INDUSTRIAL APPLICATIONS l^ o Lx*t> t-t*
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2SC1200
C1200
2SCI200
2SC1200
feed through capacitor
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Philips 4312 020
Abstract: ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar
Text: 711002b Q O b E b m PHILIPS INTERNATIONAL UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. IPHIN 0G1 Product specification
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711002b
BLT53
OT122
OT122D
MCD200
MCD20
Philips 4312 020
ferroxcube wideband hf choke
transistor 4312
BLT53
philips Trimmer 60 pf
philips capacitor 470
philips transistor
UHF POWER TRANSISTOR
UHF POWER
transistor d 1991 ar
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BLV194
Abstract: No abstract text available
Text: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an
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711065b
D0b313fl
BLV194
OT171
PINNING-SOT171
MRC097
BLV194
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Untitled
Abstract: No abstract text available
Text: F MONOLITHICS INC 32E D • 74=13626 000DS12 T ■ RFMI M X 10 20 UHF MICROTRANSMITTER CHARACTERISTICS TEST NOTES MIN TYP 433.720 433.92 MAX UNITS ELECTRICAL PARAMETERS: Output Frequency 1 Max. Output Power' 1,2,3 +7 Output Power A djust Range 1,2,4 7 Nonharmonic Spurious Outputs
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000DS12
3-10pF
To50n
470pF
3-10pF
JMC-9372)
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bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciBLF542
0D43TS4
OT171
PINNING-SOT171
MBA931
MRA971
bgjg
transistor T
philips 2322 733
BLF542
UFU370
3a0c
2222 030 capacitor philips
philips potentiometer
43t transistor
3909
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transistor 603 47e
Abstract: BTB 600 BR BLV103 71009 SB
Text: Philips Semiconductors 7110f l 5b D Q b B ll^ T 4fl ^ B P H IN Product specification UHF power transistor BLV103 bS E T> PHILIPS INTERNATIONAL FEATU RES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for
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71IDA5b
00b31I^
BLV103
OT171
MSA45Ã
MRA360
transistor 603 47e
BTB 600 BR
BLV103
71009 SB
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Untitled
Abstract: No abstract text available
Text: F MONOLITHICS INC 35E D • 7fl13fl2fl OQOOBDb M ■ RFMI -Q\ * MX 1 0 1 5 UHF MICROTRANSMITTER TEST NOTES CHARACTERISTICS MIN TYP MAX UNITS ELECTRICAL PARAMETERS: Output Frequency Max. 1 O u t p u t Power O u t p u t Power A d j u s t Nonharmonic S p u r io u s
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7fl13fl2fl
10VDC)
3-10pF
470pF
133-10pF
JMC-9372)
5/89ac
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TP3010
Abstract: TP3010S
Text: M O T O R O L A SC X ST R S / R F HbE D • b3b?254 G O I S n a T2 3 ^ - O S MOTOROLA I SEM IC O N D U C T O R 1 ■ PIOTb m m b h h b h m b h h ih h b m TECHNICAL DATA TP3010 TP3010S The RF Line UHF Pow er Transistors 1.5 W t o 900 M H z UHF POW ER The TP3010/S are designed for 12.5 V, 900 M H z common-emitter amplifiers operating
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b3b7254
TP3010/S
110Tb
TP3010,
TP3010S
TP3010
TP3010S
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38478
Abstract: 2222 372 Philips 2222 344 capacitors International Power Sources Philips 2222 372 capacitor BLF546 2322 151 12x3 727 Transistor power values GP 24A
Text: Philips Semiconductors Product specification UHF push-pull power MOS transistor PHILIPS INTERN A T I O N A L FEATURES 3 SbE m D 711005 b Ü M 4 0 Q3 BLF546 fi'ìD B I P H I N PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability
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OT268
BLF546
00M40Q3
38478
2222 372
Philips 2222 344 capacitors
International Power Sources
Philips 2222 372 capacitor
BLF546
2322 151
12x3
727 Transistor power values
GP 24A
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smd code HF transistor
Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.
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71IDflgb
BLU86
OT223
OT223
smd code HF transistor
TRANSISTOR SMD MARKING CODE KF
transistor SMD t30
SMD Transistor t30
TRANSISTOR SMD MARKING CODE 5b
TRANSISTOR SMD MARKING CODE LK
TRANSISTOR SMD MARKING CODE XI
smd transistor marking K7
transistor SMD MARKING CODE HF
smd transistor marking L6 NPN
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71009 SB
Abstract: BLV100 71108Sb 35 W 960 MHz RF POWER TRANSISTOR NPN
Text: . Philips Semiconductors • 7110asb DOtaBlDQ T71 ■ I P H I N 1 •*J PHILIPS INTERNATIONAL UHF power transistor _ . , . Product specification bSE D BLV100 PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an
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71108Sb
BLV100
OT171
-SOT171
CA91E
71009 SB
BLV100
35 W 960 MHz RF POWER TRANSISTOR NPN
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Untitled
Abstract: No abstract text available
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz
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MS4550
MS4550
MSC0895
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200 watt hf mosfet
Abstract: No abstract text available
Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 400 MHz 45 WATTS 28 VOLTS 12 dB MIN. AT 150 MHz
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MS4300
MSC0878
200 watt hf mosfet
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