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    UHC MOS Search Results

    UHC MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    UHC MOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    disadvantages of resistor

    Abstract: Undershoot FSTU32160 FSTU32160A FSTU3257 FSTU3384 FSTU6800 FSTUD16211 undershoot voltage spikes
    Text: Product Information from Fairchild Semiconductor For more information, visit us at www.fairchildsemi.com Rev. October, 2000 FAIRCHILD’S UNDERSHOOT-PROTECTED SWITCHES Fairchild Switch Applications An Undershoot Event Transient On An or Bn Ground Potential Data Corruption on the Isolated Bus


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    300mV, 100mA disadvantages of resistor Undershoot FSTU32160 FSTU32160A FSTU3257 FSTU3384 FSTU6800 FSTUD16211 undershoot voltage spikes PDF

    preventing DC voltage spikes

    Abstract: Bus Switches AN-5021 FSTU32160 can bus voltage CAN BUS CIRCUIT undershoot voltage spikes
    Text: Fairchild Semiconductor Application Note October 2000 Revised October 2000 Bus Switch Undershoot Protection: Which Systems Need this Protection and Why Bus switches have become commonplace in may system applications. Bus switches are used for bus isolation, bus


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    AN-5021 preventing DC voltage spikes Bus Switches FSTU32160 can bus voltage CAN BUS CIRCUIT undershoot voltage spikes PDF

    Bus Switches

    Abstract: AN-5021 FSTU32160
    Text: Fairchild Semiconductor Application Note October 2000 Revised October 2006 Bus Switch Undershoot Protection: Which Systems Need this Protection and Why Bus switches have become commonplace in may system applications. Bus switches are used for bus isolation, bus


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    AN-5021 Bus Switches FSTU32160 PDF

    NC7SZ74

    Abstract: 16862 FSTU16211 FSTU162211 FSTU162450 FSTU16345 FSTU16861 FSTU3125 FSTU32160 FSTU32160A
    Text: Fairchild Interface & Logic Notebook Solutions Superior Performance Solutions Low Voltage Logic Switches TinyLogic Optoelectronics Smaller Packaging Solutions MicroPak™ Ball Grid Array BGA Analog Discrete Interface & Logic Applications Docking station bus switch isolation


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    IN 5008 DIODE

    Abstract: AN-5008 nmos transistor FSTU6800 Fairchild Bipolar Transistor High Beta
    Text: Fairchild Semiconductor Application Note March 1999 Revised October 2006 FSTU - Undershoot Protected Fairchild Switch Family Introduction Fairchild Switch FST Bus Switch products have become powerful tools in the modern personal computer as well as increasing in popularity in telecommunications and data


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    ttl cmos advantages disadvantages

    Abstract: 74VCXF162835 FMS7857 FSTU16450 FSTU32160 FSTU3257 FSTU3384 FSTU6800 FSTUD16211 PC133 registered reference design
    Text: Interface & Logic Fairchild Server Solutions Superior Performance Solutions: Bus Switches GTLP Interface Low-Voltage Logic DIMM Support Smaller Packaging Solutions: TinyLogic Ball Grid Array BGA Applications: Live Insertion For PCI and PCIx Bus and Backplanes


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    IN 5008 DIODE

    Abstract: AN-5008 FSTU6800
    Text: Fairchild Semiconductor Application Note March 1999 Revised December 2000 FSTU - Undershoot Protected Fairchild Switch Family Introduction Fairchild Switch FST Bus Switch products have become powerful tools in the modern personal computer as well as increasing in popularity in telecommunications and data


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    FDS4070N7

    Abstract: No abstract text available
    Text: FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


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    FDS4070N7 FDS4070N7 PDF

    U420B

    Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
    Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary


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    Power247TM, U420B IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast PDF

    CBVK741B019

    Abstract: F63TNR FDC6305N FDC633N
    Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and


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    FDC6305N CBVK741B019 F63TNR FDC6305N FDC633N PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V  Fast Switching Times RDS on = 5.0 !  Improved Inductive Ruggedness  Lower Input Capacitance ID = 200 mA  Extended Safe Operating Area  Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain


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    2N7000BU/2N7000TA PDF

    7121

    Abstract: 2N7000TA MOSFET 7121
    Text: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS on = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92


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    2N7000BU/2N7000TA 7121 2N7000TA MOSFET 7121 PDF

    MOSFET 7121

    Abstract: 2N7000BU
    Text: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS on = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92


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    2N7000BU/2N7000TA MOSFET 7121 2N7000BU PDF

    Untitled

    Abstract: No abstract text available
    Text: FDW2501N Dual N-Channel 2.5V Specified PowerTrench ™ MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    FDW2501N PDF

    2N7002

    Abstract: 2N7002MTF Small Signal MOSFET
    Text: 2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS on RDS(on) = 5.0 Ω ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability


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    2N7002MTF OT-23 2N7002 115mA 2N7002 2N7002MTF Small Signal MOSFET PDF

    SCHEMATIC POWER SUPPLY WITH IGBTS

    Abstract: AN-7508 RUR860 fairchild flyback design 7508 230vac to 30vdc transformer 3kw inverter ac to dc inverter 3kw schematic GS601 SP601
    Text: HVIC/IGBT Half-Bridge Converter Evaluation Circuit Application Note May 1992 AN-7508 Author: George Danz Title N91 bt VIC BT lfdge nter aluon t utho The HVIC high voltage integrated circuit is designed to drive n-channel IGBTs or MOSFETs in a half-bridge configuration


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    AN-7508 500VDC. 230VAC SCHEMATIC POWER SUPPLY WITH IGBTS AN-7508 RUR860 fairchild flyback design 7508 230vac to 30vdc transformer 3kw inverter ac to dc inverter 3kw schematic GS601 SP601 PDF

    2N7002MTF

    Abstract: 2N7002 Small Signal MOSFET
    Text: 2N7002MTF Advanced Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS on RDS(on) = 5.0 Ω ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability


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    2N7002MTF OT-23 2N7002 115mA 2N7002MTF 2N7002 Small Signal MOSFET PDF

    SSS7N60B

    Abstract: SSS7N60B equivalent SSP7N60B 28A-600
    Text: SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    SSP7N60B/SSS7N60B O-220F SSS7N60B SSS7N60B equivalent SSP7N60B 28A-600 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    FDW2502P PDF

    Fairchild MOSFET TSSOP-8 dual n-channel

    Abstract: No abstract text available
    Text: FDW2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    FDW2501N Fairchild MOSFET TSSOP-8 dual n-channel PDF

    2503n fairchild

    Abstract: No abstract text available
    Text: FDW2503N Dual N-Channel 2.5V Specified PowerTrench ™ MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


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    FDW2503N 2503n fairchild PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V  Lower RDS on RDS(on) = 5.0 Ω  Improved Inductive Ruggedness  Fast Switching Times ID = 200 mA  Lower Input Capacitance  Extended Safe Operating Area SOT-23  Improved High Temperature Reliability


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    2N7002MTF OT-23 2N7002 115mA PDF

    FDC633

    Abstract: CBVK741B019 F63TNR FDC633N FDC638P SOIC-16
    Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


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    FDC638P OT-23 FDC633 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16 PDF

    LCD TV SMPS circuit

    Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
    Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient


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    O-263 FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P FDS6572A/FDS6574A Power247TM, LCD TV SMPS circuit MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50 PDF