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    onsemi FDC6333C

    MOSFET N/P-CH 30V 2.5A/2A SSOT6
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    DigiKey FDC6333C Cut Tape 26,928 1
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    Rochester Electronics FDC6333C 3,513 1
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    onsemi FDC6331L

    IC PWR SWITCH P-CH 1:1 SUPERSOT6
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    DigiKey FDC6331L Cut Tape 6,890 1
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    Mouser Electronics FDC6331L 31,306
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    onsemi FDC6330L

    IC PWR SWITCH P-CH 1:1 SUPERSOT6
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    DigiKey FDC6330L Cut Tape 5,375 1
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    onsemi FDC633N

    MOSFET N-CH 30V 5.2A SUPERSOT6
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    DigiKey FDC633N Digi-Reel 1
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    Rochester Electronics LLC FDC633N

    MOSFET N-CH 30V 5.2A SUPERSOT6
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    Find more FDC633 price and stock on Findchips.com

    FDC633 Datasheets (22)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    FDC6330 Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6330L Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6330L Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6330L Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6330L_NL Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6331L Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6331L Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6331L Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6331L_NL Fairchild Semiconductor Integrated Load Switch Original PDF
    FDC6332L Fairchild Semiconductor Common Source Load Switch P-Channel 1.8 V Specified PowerTrench MOSFET Original PDF
    FDC6332L_NL Fairchild Semiconductor Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET Original PDF
    FDC6333C Fairchild Semiconductor 30V N & P-Channel PowerTrench MOSFETs Original PDF
    FDC6333C Fairchild Semiconductor 30V N & P-Channel PowerTrench MOSFETs Original PDF
    FDC6333C_NL Fairchild Semiconductor 30V N & P-Channel PowerTrench MOSFETs Original PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDC633N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC633N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDC633N_F095 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.2A 6-SSOT Original PDF

    FDC633 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    FDC6331L

    Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
    Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


    Original     		FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR PDF

    FDC633N marking convention

    Abstract: No abstract text available
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		FDC633N NF073 FDC633N marking convention PDF

    AN1030

    Abstract: FDC6331L 125OC
    Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


    Original     		FDC6331L AN1030 FDC6331L 125OC PDF

    125OC

    Abstract: FDC6332L SUPERSOT - 3
    Text: FDC6332L Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and TM in a small SuperSot –6 package. It uses Fairchild’s


    Original     		FDC6332L 125OC FDC6332L SUPERSOT - 3 PDF

    FDC6331L

    Abstract: 125OC AN1030 CBVK741B019 F63TNR FDC633N TNR 331 28A zener diode .318 SC70-6
    Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


    Original     		FDC6331L FDC6331L 125OC AN1030 CBVK741B019 F63TNR FDC633N TNR 331 28A zener diode .318 SC70-6 PDF

    scw 52 transistor

    Abstract: No abstract text available
    Text: F /\IR G H II_ D March 1998 M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		FDC633N scw 52 transistor PDF

    fdc6333c

    Abstract: FDC6333C SUPERSOT-6 PACKAGE Supersot 6
    Text: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		FDC6333C fdc6333c FDC6333C SUPERSOT-6 PACKAGE Supersot 6 PDF

    fdc6330l

    Abstract: FDC6330
    Text: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power


    Original     		FDC6330L fdc6330l FDC6330 PDF

    FDC633N

    Abstract: SOIC-16
    Text: FAIRCHILD ìm ic d n d u c t o M arch 1998 - r FDC633N N-Channel Enhancement Mode Field Effect Transistor Features General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		FDC633N OT-23 FDC633N SOIC-16 PDF

    FDC6332L

    Abstract: No abstract text available
    Text: FDC6332L Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and TM in a small SuperSot –6 package. It uses Fairchild’s


    Original     		FDC6332L FDC6332L PDF

    marking 333

    Abstract: FDC6333C
    Text: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		FDC6333C marking 333 FDC6333C PDF

    MARKING 333

    Abstract: No abstract text available
    Text: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		FDC6333C MARKING 333 PDF

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC6330L FDC633N 2180r
    Text: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power


    Original     		FDC6330L SSOT-6 CBVK741B019 F63TNR FDC6330L FDC633N 2180r PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC6333C 30V N & P-Channel PowerTrench MOSFETs Features General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		FDC6333C PDF

    125OC

    Abstract: AN1030 FDC6331L
    Text: August 2001 FDC6331L Integrated Load Switch Features General Description x –2.8 A, –8 V. RDS ON = 55 m: @ V GS = –4.5 V RDS(ON) = 70 m: @ V GS = –2.5 V RDS(ON) = 100 m:@ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


    Original     		FDC6331L 125OC AN1030 FDC6331L PDF

    zener diode 1.5V

    Abstract: 125OC AN1030 FDC6331L
    Text: April 2007 tm FDC6331L Integrated Load Switch Features General Description x –2.8 A, –8 V. RDS ON = 55 m: @ V GS = –4.5 V RDS(ON) = 70 m: @ V GS = –2.5 V RDS(ON) = 100 m:@ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


    Original     		FDC6331L zener diode 1.5V 125OC AN1030 FDC6331L PDF

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H I L D M arch 1998 S E M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		FDC633N FDC633N PDF

    FDC633N

    Abstract: SOIC-16
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		FDC633N OT-23 FDC633N SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power


    Original     		FDC6330L PDF

    Untitled

    Abstract: No abstract text available
    Text: June 1997 FAIRCHILD M IC O N D U C T O R m FDC633N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		FDC633N PDF

    CBVK741B019

    Abstract: F63TNR FDC6330L FDC633N
    Text: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power


    Original     		FDC6330L CBVK741B019 F63TNR FDC6330L FDC633N PDF

    FDC633N

    Abstract: SOIC-16
    Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		FDC633N OT-23 FDC633N SOIC-16 PDF

    Q3 TRANSISTOR

    Abstract: FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC
    Text: XENPAK APS power: 5V in 0.9V to 1.8V/0.2A to 1.8A out Schematic Vin 4.5V to 5.5V 0.22uF C1 C2 10uF IN D1 HSD BST Q1 FDC633N DH 0.1uF R1 680pF 130k 0.9V-1.8V/ 0.2A-1.8A 6.8uH APS Power LX Q2 COMP MAX1954 C6 DL To 5Vin 150uF C4 18mOhm FDC633N GND CL Load C5


    Original     		FDC633N 680pF MAX1954 150uF 18mOhm MMBT3904 C0603C180M3GAC RLF7030-6R8M2R8 Q3 TRANSISTOR FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC PDF

    Untitled

    Abstract: No abstract text available
    Text: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V •V DROP V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω IN L ON = 0.2V @ V = 5V,I = 1.6 A. R = 0.125 Ω.


    Original     		FDC6330L PDF