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    UGF09060 Search Results

    UGF09060 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF09060 Cree 60W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    UGF09060 Cree 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    UGF09060 Cree 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    UGF09060F Cree FET Transistor, 60W, 869-894GHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UGF09060P Cree FET Transistor, 60W, 869-894GHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, UGF09060

    UGF09060F

    Abstract: Cree Microwave MRF9060 UGF09060 UGF09060P
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, UGF09060 UGF09060F Cree Microwave MRF9060 UGF09060P

    4439 gm

    Abstract: MRF9060 equivalent ultrarf
    Text: UGF09060 60W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF09060 800MHz 1000MHz. MRF9060 870MHz CDMA2000: 4439 gm MRF9060 equivalent ultrarf

    UGF09060F

    Abstract: MRF9060 UGF09060 UGF09060P
    Text: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,


    Original     		PDF UGF09060 869-894MHz, 869-894MHz. MRF9060. 27VDC, 869MHz, 400kHz) 600kHz) UGF09060F MRF9060 UGF09060 UGF09060P

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		PDF BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b