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    CAP FILM 1UF 5% 850VDC AXIAL
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    CAP FILM METAL AXL POLYPROP
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    CAP FILM METAL AXL POLYPROP
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    KEMET Corporation C4CAPUC4100ZA3J

    Film Capacitors 1200volts 1uF 5%
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    UC410 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UC410 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    UC410 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    UC410 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    UC410 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    UC410 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    UC410 Solitron Devices Low Power FET, RF Amplifiers, P-Channel FETS Scan PDF
    UC410 Solitron Devices General Purpose P-Channel FETs Scan PDF

    UC410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2386

    Abstract: 2N2497 2N2498 2N2499 2N3380 FP22 to92 2N3330 2N3331 2N3382 2N3384
    Text: *BVDgo or Type Case Geometry BFgss Number Style Min V TO2N2386 FP5.3 *20 5 TO2N2386A FP5.3 *20 5 TO2N2497 FP5.3 20 5 TO2N2498 FP5.3 20 5 TO2N2499 FP5.3 20 5 TO2N2500 FP5.3 20 5 TO2N2606 FP22.2 30 18 TO2N2607 FP22.2 30 18 TO2N2608 FP22.2 30 18 TO2N2609 FP22.2


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    PDF O2N2386 O2N2386A O2N2497 O2N2498 O2N2499 O2N2500 O2N2606 O2N2607 O2N2608 O2N2609 2n2386 2N2497 2N2498 2N2499 2N3380 FP22 to92 2N3330 2N3331 2N3382 2N3384

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    FZK101

    Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
    Text: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974


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    PDF Grou19 CN127-128-638 ZN220-320. CN131-132-642. ZN221-321. CN133-134-644. ZN248-348. CN135-136-646 ZN222-322. CN121-122-682. FZK101 FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001

    2N2844

    Abstract: 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420
    Text: -Æ litra n Dev/ces. Inc. P -C H A N N E L J U N C T I O N FE T CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .02cr 0.508mm Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


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    PDF 508mm) 381mm) 0254mm) 2N2844 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


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    PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    UC451

    Abstract: No abstract text available
    Text: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20


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    PDF 2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 UC451

    2NB906

    Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
    Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style


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    PDF UC4250» UC4250C» MIL-STD-883C, 2N2609 2N3821 2N3822 2N3823 2N4856 2N4857 2N48S8 2NB906 IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92

    2N5021

    Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
    Text: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S


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    PDF 2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 2N2500 2N5021 2N5265 2N5266 2n5268 2N5460 2n5462 2N2609

    2N5266

    Abstract: No abstract text available
    Text: ÄTTÄ[L LOW P O W E R FIELD E FFE C T T R A N S IS T O R S ¡[L ÄtMPOJFDIlKi Type Number Case Style (T O - Geometry BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3


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    PDF 2N2608 2N2609» 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2N5266

    Untitled

    Abstract: No abstract text available
    Text: Pöä@E yj Tr ©^ t o [l ( P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " (0.508mm) Backside Contact: 3,OCX) À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


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    PDF 508mm) 381mm) 0254mm) UC400, UC410, UC420, 2N2607, 2N2608, 2N2609, 2N2842,

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


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    PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Untitled

    Abstract: No abstract text available
    Text: LOW PO W E R FIELD EFFE C T T R A N S IS T O R S Type Number Case Style T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (PF) Idss Vgs (off) Min Max (V) (nA) lgss Max (mA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0 10.0 10.0 0.9 0.9


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    2N2609

    Abstract: 2n2844 9TSS
    Text: P -C H A N N E L J U N C T IO N FET CHIP NUMBER [Ft? CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " 0.508mm} Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS V It is advisable that: Die Size: Pad Sim: a the die be eutectically mounted with gold silicon preform 98/2%.


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    PDF 508mm} 381mm) 0-S08 0254mm) 2N2609 2n2844 9TSS

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


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    PDF MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451

    2N2386

    Abstract: No abstract text available
    Text: raOEHyXgTr ÄTTÄIL LO W P O W E R FIELD EFFECT T R A N S IS T O R S m Typ« HvBttbsi \ U/AL [P O « ® ® ! •BVDgo or Ciss BVgss Style Min Max (T O - Geometry (pF) Cam (V) lgss Max (nA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0


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    PDF 2N2386 2N2386A 2N2497 2N2498 2N2499 2N2500 2N2606 2N2607 2N2608 2N2609»

    2N3993A

    Abstract: FP22 to92 2N5265
    Text: m it r o n Devices. Inc r a E i y j< S T P Ì KI I Type Number â ît â il ® LOW P O W E R FIELD E F F E C T T R A N S IS T O R S •BVDgo or BVgss Ciss Case Max Min Style (TO—) Geometry (V) (pF) U » ® Vgs (off) Min Max (V) (nA) © ! ! (?•=■© K I / Ä K 1K l ( I I I


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    PDF 2N2500 2N3332 2N3993A FP22 to92 2N5265

    2n2386

    Abstract: 2N2497 2N2498 2N2499 2N2844 UC-40 2N2606 2N3331 2N3380 2N3575
    Text: [^ © UKST (SÄT/m L O W P O W E R FIELD E F F E C T T R A N S I S T O R S Type Number Case Style ( T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (pF) _ 20.0 — — — — — — — — — 13.0 33.0 1.0 2.2 1.0 60 180 540 1800 100 — — —


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    PDF 2N2386 2N2386A 2N2497 2N2498 2N2499 2N2500 2N2606 2N2607 UC805 UC814 2N2844 UC-40 2N3331 2N3380 2N3575

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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