Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices MACH220-10 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ ■ 8 PAL blocks with buried macrocells 10 ns tPD ■ ■ 80 MHz fMAx external
|
OCR Scan
|
MACH220-10
MACH120
MACH220
PAL22V10
oth752b
MACH220:
68-Pin
28-Pin)
25-068-1221028A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BF256A to C _ / V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended for v.h.f. and u.h.f. applications. Q U ICK R E F E R E N C E D A TA
|
OCR Scan
|
BF256A
BF256A
D03S7B4
003572b
|
PDF
|
BF256A
Abstract: BF256B BF256C BF256B1 BF256
Text: BF256A to C _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in tended fo r v.h.f. and u.h.f. applications. Q UICK REFERENCE D A T A Drain-source voltage
|
OCR Scan
|
BF256A
003572b
BF256B
BF256C
BF256B1
BF256
|
PDF
|