Untitled
Abstract: No abstract text available
Text: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier
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IRFR/U9214
IRFR9214)
IRFU9214)
-250V
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V ν Avalanche Rugged Technology RDS on = 4.0 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = -1.53 A ν Improved Gate Charge ν Extended Safe Operating Area D-PAK ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V
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-250V
SFR/U9214
-250V
SFR9214TM
SFR9214TF
O-252
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Untitled
Abstract: No abstract text available
Text: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier
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IRFR/U9214
IRFR9214)
IRFU9214)
-250V
12-Mar-07
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IRF 870
Abstract: HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260
Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S
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5375A
IRFR/U9214PbF
IRFR9214)
IRFU9214)
-250V
12-Mar-07
IRF 870
HEXFET Power MOSFET P-Channel
IRFR9214
IRFU9214
IRF MOSFET 260
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IRF 870
Abstract: mosfet IRF 870 IRFR9214 IRFU9214
Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S
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5375A
IRFR/U9214PbF
IRFR9214)
IRFU9214)
-250V
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRF 870
mosfet IRF 870
IRFR9214
IRFU9214
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N mosfet 250v 600A
Abstract: IRFR9214 IRFU9214 IRFR P-Channel MOSFET
Text: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier
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IRFR/U9214
IRFR9214)
IRFU9214)
-250V
N mosfet 250v 600A
IRFR9214
IRFU9214
IRFR P-Channel MOSFET
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N mosfet 250v 600A
Abstract: No abstract text available
Text: IRFR/U9214 Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs
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IRFR/U9214
O-252AA
N mosfet 250v 600A
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Untitled
Abstract: No abstract text available
Text: PD - 95375 PRELIMINARY IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A
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Original
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PDF
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IRFR9214)
IRFU9214)
IRFR/U9214PbF
-250V
O-252AA)
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (U9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S
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Original
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PDF
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5375A
IRFR/U9214PbF
IRFR9214)
IRFU9214)
-250V
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS on = 4.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.53 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V
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SFR/U9214
-250V
102oduct
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Untitled
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V ν Avalanche Rugged Technology RDS on = 4.0 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = -1.53 A ν Improved Gate Charge ν Extended Safe Operating Area D-PAK ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V
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SFR/U9214
-250V
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AP60T03GH
Abstract: 10TPB100M 6TPC150M AP60T03 APU9214 APU9214A APU9214AM APU9214M capacitor 0.1MF 1KV capacitor 100MF 16v
Text: Technology Licensed from International Rectifier U9214 / U9214A 8-PIN SYNCHRONOUS PWM CONTROLLER FEATURES DESCRIPTION Synchronous Controller in 8-Pin Package Operating with single 5V or 12V supply voltage Internal 200KHz Oscillator 400KHz for U9214A
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APU9214
APU9214A
200KHz
400KHz
APU9214A)
500mA
ECJ-2VF1C105Z
AP60T03GH
10TPB100M
6TPC150M
AP60T03
APU9214A
APU9214AM
APU9214M
capacitor 0.1MF 1KV
capacitor 100MF 16v
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U420B
Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary
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Power247TM,
U420B
IRFR P-Channel MOSFET
sfr 135
BALLAST CFL
U210B
U220B
cfl ballast
CFL lamp
Complementary MOSFETs
electronic ballast
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Untitled
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 4 .0 In = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V
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OCR Scan
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SFR/U9214
-250V
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NC243
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge ^ D S o n = 4.0 Q lD = -1.53 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |jA (Max.) @ VDS = -250V
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OCR Scan
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PDF
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-250V
SFR/U9214
NC243
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gs 1117 ax
Abstract: W923
Text: PD - 9.1658A International lO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -2 5 0 V R D S (on) = 3 . 0 Q. ID = - 2 . 7 A
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OCR Scan
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PDF
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IRFR9214)
IRFU9214)
IRFR/U9214
gs 1117 ax
W923
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U9214
Abstract: No abstract text available
Text: Advanced SFR/U9214 P o w e r MOSFET FEATURES BV dss = -250 V • A v a la n c h e R u g g e d T e c h n o lo g y ■ R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = ■ L o w e r In p u t C a p a c ita n c e ID = -1.53 A ■ Im p ro v e d G a te C h a rg e
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SFR/U9214
-250V
U9214
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ior 481 mosfet
Abstract: IRFR9214 IRFU9214N IOR 235
Text: 4 PD - 9.1658 International IO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (U9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R D S (on) = 3 0 Q Id = -2.8A
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IRFR/U9214
IRFR9214)
IRFU9214N
M655M52
ior 481 mosfet
IRFR9214
IOR 235
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Untitled
Abstract: No abstract text available
Text: SFR/U9214 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jiA Max. @ VOS = -250V ^D S(on) = 4 .0 Q
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OCR Scan
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PDF
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SFR/U9214
-250V
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N mosfet 250v 600A
Abstract: No abstract text available
Text: PD - 9.1658A International IO R Rectifier IR F R /U 9214 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9214 Straight Lead (U9214) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -250V R d s (o ii )
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IRFR9214)
IRFU9214)
-250V
-252A
N mosfet 250v 600A
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