Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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-100V
SFR/U9130
SFU9130TU
O-251
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Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 0.3 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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SFR/U9130
-100V
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Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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SFR/U9130
-100V
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d7810
Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED
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M78-DVT
d7810
L9141
MXM pinout
U4900
J9002
K40 fet
MARK G4 SOT363
Apple j9002
k50 apple
ISL6269
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r4363
Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED
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M72-DVT
03/0m72
r4363
L9141
NTC 16D-7
MXM pinout
C4253
PP2102
d7810
imac MLB
ntc 10d-7
PP1013
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Untitled
Abstract: No abstract text available
Text: Advanced SFR/U9130 P o w e r MOSFET FEATURES BVDSS — -100 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = -9.8 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea
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SFR/U9130
-100V
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U9130
Abstract: diode 98A G39A
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVqss = "100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 0 -3 ß ■ Lower Input Capacitance lD = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V
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OCR Scan
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SFR/U9130
-100V
7Tb4142
8Z694-
U9130
diode 98A
G39A
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Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V
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SFR/U9130
-100V
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diode AR S1 98
Abstract: No abstract text available
Text: SFR/U9130 A dvanced Pow er MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V
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-100V
SFR/U9130
diode AR S1 98
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TL0251
Abstract: hp 3101 LD-105VR LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR
Text: -44T .,= 25’C 1 f* * e ft ï 1 « fi & * L D -105V R o - A m t L D -2Q W R 650 650 LD -404V R m 650 L D -602V R m 650 vF ;m A ì <V i i m i : 10 2 .0 ¡0 1.6 4 10 2 .0 \0 4 IO 2 .0 10 ftlf-ìS * vkff; 20 3 •'C -2 5 -7 5 17 2 .5 x 5 . 0 20 3 -2 5 -8 5 —2 5 — "5
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LD-105VR
LD-404VR
10x10
LD-602VR
LD-603VR
LD-701VR
LD-702VR
LD-706VR
13x18
LD1203VR
TL0251
hp 3101
LD1203LR
LD1203VR
LD-404VR
LD-602VR
LD-603VR
LD-701VR
LD-702VR
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