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    U913 Search Results

    U913 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SBU9-1320R Coilcraft Inc Common mode choke, SMT, RoHS Visit Coilcraft Inc
    SBU9-1320R7L Coilcraft Inc Common mode choke, SMT, RoHS Visit Coilcraft Inc
    SBU9-1320R7LD Coilcraft Inc Duplexer, Visit Coilcraft Inc
    SBU9-1320R7LB Coilcraft Inc Duplexer, Visit Coilcraft Inc
    BU9-1320R7BL Coilcraft Inc Single Phase EMI Filter, ROHS COMPLIANT PACKAGE-4 Visit Coilcraft Inc

    U913 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V


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    PDF -100V SFR/U9130 SFU9130TU O-251

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 0.3 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V


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    PDF SFR/U9130 -100V

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD U9131X Preliminary CMOS IC TONE/PULSE DIALER WITH REDIAL FUNCTION  DESCRIPTION The UTC U9131X series are monolithic ICs that offer the dialing signals in either pulse or tone mode. The UTC U9131X series feature a redial memory.


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    PDF U9131X U9131X OP-18 100mS QW-R502-A34

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V


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    PDF SFR/U9130 -100V

    SMD fuse P110

    Abstract: 74c914 transistor b733 transistor SMD p113 EPSON C691 MAIN npn transistor smd w19 smd diode c539 transistor b771 transistor c1015 transistor c1008 011
    Text: 4 3 Figure 1: 2 1 ML300 CPU Table 1: ML300 CPU Virtex-II Pro Based Virtex-II Pro Based Block Diagram Table of Contents D D Infiniband HSSCD2 Dual Gig-E Fiber (Quad) Serial ATA (Dual) Sheet 1: Sheet 2: Sheet 3: Sheet 4: Sheet 5: Sheet 6: Sheet 7: Sheet 8:


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    PDF ML300 RP326 RP324) RP340 RP341) SMD fuse P110 74c914 transistor b733 transistor SMD p113 EPSON C691 MAIN npn transistor smd w19 smd diode c539 transistor b771 transistor c1015 transistor c1008 011

    CQX 86

    Abstract: U832 write-verify RaR8 81 u218 A09T
    Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


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    PDF DM512K64DTE/DM512K72DTE 512Kb 64/512Kb 168BD5-TR DM512K72DTE 72-bit CQX 86 U832 write-verify RaR8 81 u218 A09T

    800FP-POT

    Abstract: u924 800F-AL01 800F-Q01 800FP-POT5 800F-1YM3 800FP-SM42 800FP-P3PN3G 800FP-SM22 800F-X01
    Text: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design


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    PDF 800F-5M 800F-4P 800F-6P 800F-SG001E-EN-P 800F-SG001D-EN-P 800FP-POT u924 800F-AL01 800F-Q01 800FP-POT5 800F-1YM3 800FP-SM42 800FP-P3PN3G 800FP-SM22 800F-X01

    n5311

    Abstract: ep53A8 N5312 Enpirion Product Marking Specification EP5358HUI EP5358 P5352 EP5387LQI EN5337 ep5358lui
    Text: Enpirion Product Marking Specification Enpirion Product Marking Specification Top Marking Product ID Row 1 Marking See View Product ID Row 1 Marking EN5311QI N5311 2 EP5358HUI ANXX 1 EN5312QI N5312 2 EP5358LUI AKXX 1 EN5322QI N5322 2 EP5362QI P5362 2 EN5335QI


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    PDF EN5311QI N5311 EP5358HUI EN5312QI N5312 EP5358LUI EN5322QI N5322 EP5362QI P5362 n5311 ep53A8 N5312 Enpirion Product Marking Specification EP5358HUI EP5358 P5352 EP5387LQI EN5337 ep5358lui

    800F-1YM3

    Abstract: 800F-AL01 800FM-LMT44 800F-AMRG 800FP-SM42 800FM-LMP44 wiring diagram for 800f-xd7 Allen-Bradley 800FM 800FPSM22PX10 800FP-POT
    Text: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design


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    PDF 800F-SG001D-EN-P 800F-SG001C-EN-P 800F-1YM3 800F-AL01 800FM-LMT44 800F-AMRG 800FP-SM42 800FM-LMP44 wiring diagram for 800f-xd7 Allen-Bradley 800FM 800FPSM22PX10 800FP-POT

    U10A-14

    Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
    Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


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    PDF DM512K64DT6/DM512K72DT6 512Kb 64/512Kb 168BD5-TR DM512K72DT 72-bit U10A-14 U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318

    U1615

    Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
    Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


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    PDF DM1M64DT6/DM1M72DT6 64/1Mb 16Kbytes 168BD5-TR DM1M72DT6 72-bit U1615 u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123

    d7810

    Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED


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    PDF M78-DVT d7810 L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269

    r4363

    Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED


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    PDF M72-DVT 03/0m72 r4363 L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013

    CQX 86

    Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
    Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    Original
    PDF DM1M64DTE/DM1M72DTE 64/1Mb 16Kbytes 168BD5-TR DM512K72DTE 72-bit CQX 86 U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515

    U9130

    Abstract: diode 98A G39A
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVqss = "100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 0 -3 ß ■ Lower Input Capacitance lD = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V


    OCR Scan
    PDF SFR/U9130 -100V 7Tb4142 8Z694- U9130 diode 98A G39A

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V


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    PDF SFR/U9130 -100V

    diode AR S1 98

    Abstract: No abstract text available
    Text: SFR/U9130 A dvanced Pow er MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V


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    PDF -100V SFR/U9130 diode AR S1 98

    Untitled

    Abstract: No abstract text available
    Text: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache


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    PDF DM512K64DTBDM512K72DTE /512Kb 168BD5-TR 72-bit

    Untitled

    Abstract: No abstract text available
    Text: Enhanced DM1M64DTE/DM1M72DTE M ultibank Burst EDOEDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM IVfemoiy Suterns be. H Product Specification Features row register over a 2Kbyte-wide bus in just 18ns for an effective cache • 16Kbytes SRAM Cache Memory for 12ns Random Reads Within


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    PDF DM1M64DTE/DM1M72DTE 64/1Mb 16Kbytes 168BD5-TR DM1M72DTE- 72-bit

    PJ 52

    Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
    Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


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    PDF DM1M64DT6/DM1M72DT6 DM1M72DT6 72-blt PJ 52 U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218

    U23C-36

    Abstract: No abstract text available
    Text: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


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    PDF DM1M64DT6/DM1M72DT6 16Kbytes DM1M72DT6- 72-bit U23C-36

    FLUKE 8840a specification

    Abstract: FLUKE 8840a 700013 Y8101 capacitor IH 104j FLUKE 83RF PROBE FLUKE 79 series II multimeter diagram 40 HMR 20 EQUIVALENT 40 RB 120 8840A instruction manual U804
    Text: DIGITAL MULTIMETER Instruction Manual FLUKE. 8840A DIGITAL MULTIMETER Instruction Manual PN 879304 December 1991 Rev. 2, 4/94 1994 Fluke Corporation. All rights reserved. Printed in U.S.A. All product names are trademarks of their respective companies FLUKE


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    PDF U101-24 U101-25 FLUKE 8840a specification FLUKE 8840a 700013 Y8101 capacitor IH 104j FLUKE 83RF PROBE FLUKE 79 series II multimeter diagram 40 HMR 20 EQUIVALENT 40 RB 120 8840A instruction manual U804

    ESI 2160

    Abstract: u332 U11B2 cqx 87 u918
    Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


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    PDF DM512K64D 6/DM512K720T6MultibankEDO 512Kb DM512K72DT6-12 72-blt ESI 2160 u332 U11B2 cqx 87 u918

    TL0251

    Abstract: hp 3101 LD-105VR LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR
    Text: -44T .,= 25’C 1 f* * e ft ï 1 « fi & * L D -105V R o - A m t L D -2Q W R 650 650 LD -404V R m 650 L D -602V R m 650 vF ;m A ì <V i i m i : 10 2 .0 ¡0 1.6 4 10 2 .0 \0 4 IO 2 .0 10 ftlf-ìS * vkff; 20 3 •'C -2 5 -7 5 17 2 .5 x 5 . 0 20 3 -2 5 -8 5 —2 5 — "5


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    PDF LD-105VR LD-404VR 10x10 LD-602VR LD-603VR LD-701VR LD-702VR LD-706VR 13x18 LD1203VR TL0251 hp 3101 LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR