Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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-100V
SFR/U9130
SFU9130TU
O-251
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Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS on = 0.3 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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SFR/U9130
-100V
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD U9131X Preliminary CMOS IC TONE/PULSE DIALER WITH REDIAL FUNCTION DESCRIPTION The UTC U9131X series are monolithic ICs that offer the dialing signals in either pulse or tone mode. The UTC U9131X series feature a redial memory.
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U9131X
U9131X
OP-18
100mS
QW-R502-A34
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Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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SFR/U9130
-100V
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SMD fuse P110
Abstract: 74c914 transistor b733 transistor SMD p113 EPSON C691 MAIN npn transistor smd w19 smd diode c539 transistor b771 transistor c1015 transistor c1008 011
Text: 4 3 Figure 1: 2 1 ML300 CPU Table 1: ML300 CPU Virtex-II Pro Based Virtex-II Pro Based Block Diagram Table of Contents D D Infiniband HSSCD2 Dual Gig-E Fiber (Quad) Serial ATA (Dual) Sheet 1: Sheet 2: Sheet 3: Sheet 4: Sheet 5: Sheet 6: Sheet 7: Sheet 8:
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ML300
RP326
RP324)
RP340
RP341)
SMD fuse P110
74c914
transistor b733
transistor SMD p113
EPSON C691 MAIN
npn transistor smd w19
smd diode c539
transistor b771
transistor c1015
transistor c1008 011
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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800FP-POT
Abstract: u924 800F-AL01 800F-Q01 800FP-POT5 800F-1YM3 800FP-SM42 800FP-P3PN3G 800FP-SM22 800F-X01
Text: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design
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800F-5M
800F-4P
800F-6P
800F-SG001E-EN-P
800F-SG001D-EN-P
800FP-POT
u924
800F-AL01
800F-Q01
800FP-POT5
800F-1YM3
800FP-SM42
800FP-P3PN3G
800FP-SM22
800F-X01
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n5311
Abstract: ep53A8 N5312 Enpirion Product Marking Specification EP5358HUI EP5358 P5352 EP5387LQI EN5337 ep5358lui
Text: Enpirion Product Marking Specification Enpirion Product Marking Specification Top Marking Product ID Row 1 Marking See View Product ID Row 1 Marking EN5311QI N5311 2 EP5358HUI ANXX 1 EN5312QI N5312 2 EP5358LUI AKXX 1 EN5322QI N5322 2 EP5362QI P5362 2 EN5335QI
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EN5311QI
N5311
EP5358HUI
EN5312QI
N5312
EP5358LUI
EN5322QI
N5322
EP5362QI
P5362
n5311
ep53A8
N5312
Enpirion Product Marking Specification
EP5358HUI
EP5358
P5352
EP5387LQI
EN5337
ep5358lui
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800F-1YM3
Abstract: 800F-AL01 800FM-LMT44 800F-AMRG 800FP-SM42 800FM-LMP44 wiring diagram for 800f-xd7 Allen-Bradley 800FM 800FPSM22PX10 800FP-POT
Text: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design
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800F-SG001D-EN-P
800F-SG001C-EN-P
800F-1YM3
800F-AL01
800FM-LMT44
800F-AMRG
800FP-SM42
800FM-LMP44
wiring diagram for 800f-xd7
Allen-Bradley 800FM
800FPSM22PX10
800FP-POT
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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U1615
Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
64/1Mb
16Kbytes
168BD5-TR
DM1M72DT6
72-bit
U1615
u1515
U24A
U20-16
U217
U1613
U23C-36
U16-18
U17-16
transistor BMO 123
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d7810
Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED
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M78-DVT
d7810
L9141
MXM pinout
U4900
J9002
K40 fet
MARK G4 SOT363
Apple j9002
k50 apple
ISL6269
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r4363
Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED
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M72-DVT
03/0m72
r4363
L9141
NTC 16D-7
MXM pinout
C4253
PP2102
d7810
imac MLB
ntc 10d-7
PP1013
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CQX 86
Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DTE/DM1M72DTE
64/1Mb
16Kbytes
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U1615
U2-14
U217
u416
CQX 89
CQv 89
512kx8 dram simm
u332
u1515
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U9130
Abstract: diode 98A G39A
Text: SFR/U9130 Advanced Power MOSFET FEATURES BVqss = "100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 0 -3 ß ■ Lower Input Capacitance lD = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V
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SFR/U9130
-100V
7Tb4142
8Z694-
U9130
diode 98A
G39A
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Untitled
Abstract: No abstract text available
Text: SFR/U9130 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V
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SFR/U9130
-100V
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diode AR S1 98
Abstract: No abstract text available
Text: SFR/U9130 A dvanced Pow er MOSEET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ VDS = -100V
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-100V
SFR/U9130
diode AR S1 98
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Untitled
Abstract: No abstract text available
Text: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache
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DM512K64DTBDM512K72DTE
/512Kb
168BD5-TR
72-bit
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Untitled
Abstract: No abstract text available
Text: Enhanced DM1M64DTE/DM1M72DTE M ultibank Burst EDOEDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM IVfemoiy Suterns be. H Product Specification Features row register over a 2Kbyte-wide bus in just 18ns for an effective cache • 16Kbytes SRAM Cache Memory for 12ns Random Reads Within
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DM1M64DTE/DM1M72DTE
64/1Mb
16Kbytes
168BD5-TR
DM1M72DTE-
72-bit
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PJ 52
Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
DM1M72DT6
72-blt
PJ 52
U1615
U18-18
u1515
U23D-43
U176
U21-18
u1818
L115
U218
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U23C-36
Abstract: No abstract text available
Text: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
16Kbytes
DM1M72DT6-
72-bit
U23C-36
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FLUKE 8840a specification
Abstract: FLUKE 8840a 700013 Y8101 capacitor IH 104j FLUKE 83RF PROBE FLUKE 79 series II multimeter diagram 40 HMR 20 EQUIVALENT 40 RB 120 8840A instruction manual U804
Text: DIGITAL MULTIMETER Instruction Manual FLUKE. 8840A DIGITAL MULTIMETER Instruction Manual PN 879304 December 1991 Rev. 2, 4/94 1994 Fluke Corporation. All rights reserved. Printed in U.S.A. All product names are trademarks of their respective companies FLUKE
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U101-24
U101-25
FLUKE 8840a specification
FLUKE 8840a
700013
Y8101
capacitor IH 104j
FLUKE 83RF PROBE
FLUKE 79 series II multimeter diagram
40 HMR 20 EQUIVALENT 40 RB 120
8840A instruction manual
U804
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
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TL0251
Abstract: hp 3101 LD-105VR LD1203LR LD1203VR LD-404VR LD-602VR LD-603VR LD-701VR LD-702VR
Text: -44T .,= 25’C 1 f* * e ft ï 1 « fi & * L D -105V R o - A m t L D -2Q W R 650 650 LD -404V R m 650 L D -602V R m 650 vF ;m A ì <V i i m i : 10 2 .0 ¡0 1.6 4 10 2 .0 \0 4 IO 2 .0 10 ftlf-ìS * vkff; 20 3 •'C -2 5 -7 5 17 2 .5 x 5 . 0 20 3 -2 5 -8 5 —2 5 — "5
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LD-105VR
LD-404VR
10x10
LD-602VR
LD-603VR
LD-701VR
LD-702VR
LD-706VR
13x18
LD1203VR
TL0251
hp 3101
LD1203LR
LD1203VR
LD-404VR
LD-602VR
LD-603VR
LD-701VR
LD-702VR
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