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    U632H16 Search Results

    U632H16 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Type PDF
    U632H16 Unknown PowerStore 2K x 8 nvSRAM Original PDF
    U632H16 Simtek PowerStore 2K x 8 nvSRAM Original PDF
    U632H16 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1C25 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1C25 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1C35 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1C35 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1C45 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1C45 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1K25 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1K25 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1K35 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1K45 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BD1K45 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BDC25 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BDC35 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BDC35 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BDC45 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BDC45 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U632H16BDK25 ZMD PowerStore 2K x 8 nvSRAM Original PDF

    U632H16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    U632H16

    Abstract: Stk 2048 11
    Text: U632H16 PowerStore 2K x 8 nvSRAM Not Recommended For New Designs Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle


    Original     		PDF U632H16 M3015 c-9481 600mil) U632H16 Stk 2048 11

    U632H16

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 M3015 600mil) U632H16

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features S High-performance CMOS nonS S S S S S S S S S S S S S S S volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101 600mil)

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features S High-performance CMOS nonS S S S S S S S S S S S S S S S volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101

    PDIP28

    Abstract: U632H16 ZMD AG
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features ! High-performance CMOS non! ! ! ! ! ! ! ! ! ! ! ! ! ! ! volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 D-01109 D-01101 PDIP28 U632H16 ZMD AG

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101

    PDIP28

    Abstract: U632H16
    Text: U632H16 PowerStore 2K x 8 nvSRAM F Packages: Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 D-01109 D-01101 PDIP28 U632H16

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features ! High-performance CMOS non! ! ! ! ! ! ! ! ! ! ! ! ! ! ! volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101

    ENE 555

    Abstract: ZMD cross reference PDIP28 U632H16
    Text: U632H16 PowerStore 2K x 8 nvSRAM F Packages: Features F F F F F F F F F F F F F F F F PDIP28 300 mil PDIP28 (600 mi) SOP28 (300 mil) auto matically on power up. The U632H16 combines the high performance and ease of use of a fast High-performance CMOS no nSRAM with n onvolatile data intevolatile stati c RAM 2048 x 8 bits


    Original     		PDF U632H16 PDIP28 U632H16 D-01109 D-01101 ENE 555 ZMD cross reference PDIP28

    Untitled

    Abstract: No abstract text available
    Text: U632H16 PowerStore 2K x 8 nvSRAM Features F High-performance CMOS nonF F F F F F F F F F F F F F F volatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM


    Original     		PDF U632H16 PDIP28 D-01109 D-01101

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original     		PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    STK12C68

    Abstract: U632H16
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10050 01 PCN Status PCN Date October 04, 2006 PCN Type


    Original     		PDF U632H16 28-pin U632H16D U632H16S U632H64SC/K25G1, U632H16SC/K25G1 STK12C68

    a1020e

    Abstract: No abstract text available
    Text: U632H16 P o w e r S to r e 2 Kx 8 n v S R AM A v a i l a b l e in Q 2 / 9 7 Features □ H igh-perform ance C M O S non­ volatile static RAM 2048 x 8 bits □ 25, 35 and 45 ns Access Tim es □ 12, 20 and 25 ns O utput Enable Access Tim es □ lc c = 1 5 m A at 200 ns Cycle


    OCR Scan     		PDF U632H16 a1020e