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    U5410 Search Results

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    U5410 Price and Stock

    Infineon Technologies AG IRFU5410PBF

    MOSFET P-CH 100V 13A IPAK
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    DigiKey IRFU5410PBF Tube 4,368 1
    • 1 $1.3
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    • 100 $1.0468
    • 1000 $0.70312
    • 10000 $0.51351
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    Avnet Americas IRFU5410PBF Bulk 16 Weeks, 3 Days 1
    • 1 $1.34
    • 10 $1.1
    • 100 $0.862
    • 1000 $0.595
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    IRFU5410PBF Tube 18 Weeks 3,000
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    Mouser Electronics IRFU5410PBF 13,811
    • 1 $1.29
    • 10 $0.787
    • 100 $0.677
    • 1000 $0.531
    • 10000 $0.488
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    Rochester Electronics IRFU5410PBF 18,142 1
    • 1 $0.5704
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    • 100 $0.5362
    • 1000 $0.4848
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    Chip1Stop IRFU5410PBF Tube 3,535
    • 1 -
    • 10 $0.786
    • 100 $0.552
    • 1000 $0.486
    • 10000 $0.451
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    Infineon Technologies AG IRFU5410

    MOSFET P-CH 100V 13A IPAK
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    DigiKey IRFU5410 Tube 75
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    TE Connectivity CU5410-000

    HEATSHRINK 0.665" BLACK
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    Sager CU5410-000
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    Rochester Electronics LLC IRFU5410PBF

    IRFU5410 - 20V-250V P-CHANNEL PO
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    DigiKey IRFU5410PBF Bulk 532
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    International Rectifier IRFU5410PBF

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    Bristol Electronics IRFU5410PBF 199
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    Rochester Electronics IRFU5410PBF 282,394 1
    • 1 $0.5704
    • 10 $0.5704
    • 100 $0.5362
    • 1000 $0.4848
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    ComSIT USA IRFU5410PBF 150
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    Find more U5410 price and stock on Findchips.com

    U5410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFR5410

    Abstract: IRFU5410 100v P-Channel DPAK U5410
    Text: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description


    Original     		PDF IRFR/U5410 IRFR5410) IRFU5410) -100V IRFR5410 IRFU5410 100v P-Channel DPAK U5410

    MAX1302

    Abstract: No abstract text available
    Text: 北京伊泰克电子有限公司 简介 MAX1302 多量程低功耗、16 位、逐次逼近型模数转换器， 采用+5V 单电源供电，具有高达 115ksps 的吞吐量。独立的数字电源 允许通过可将电源电流降至 1.3mA 典型值 。完全关断模式则可将


    Original     		PDF MAX1302 115ksps MAX1302 MAX1302/MAX1303 6115ksps

    IRFR P-Channel MOSFET

    Abstract: IRFR5410 IRFU5410 pcb layout for TO 252AA
    Text: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description


    Original     		PDF IRFR/U5410 IRFR5410) IRFU5410) -100V IRFR P-Channel MOSFET IRFR5410 IRFU5410 pcb layout for TO 252AA

    DPAK marking code 300

    Abstract: No abstract text available
    Text: PD -95314 IRFR/U5410PbF z z z z z z z z Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω G


    Original     		PDF IRFR/U5410PbF IRFR5410) IRFU5410) -100V O-252AA) EIA-481 EIA-541. EIA-481. DPAK marking code 300

    IRF9530N

    Abstract: diode 78a
    Text: IRFR/U5410PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage


    Original     		PDF IRFR/U5410PbF IRFU120 O-252AA) EIA-481 EIA-541. EIA-481. IRF9530N diode 78a

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1533A IRFR/U5410 HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description


    Original     		PDF IRFR/U5410 IRFR5410) IRFU5410) -100V

    Untitled

    Abstract: No abstract text available
    Text: 取付穴参考寸法図 •DCファンモータ用 □３ １． ０シリーズ 吐出側/吸込側 □４ ２． ０シリーズ 吐出側/吸込側 □６ ０シリーズ ３． 吐出側/吸込側 58.0 50.0 4-φ3.2 4-φ4.3 24.0 28.0 φ 50.0 .0 39 58.0


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 16位1 MSPS/500 kSPS、 差分PulSAR ADC AD7915/AD7916 产品特性 概述 低功耗： AD7915 4 mW 1 MSPS，仅VDD 7 mW (1 MSPS，总功耗） AD7916 2 mW (500 kSPS，仅VDD） 3.7 mW (500 kSPS，总功耗） 16位分辨率、无失码 吞吐速率：1 MSPS (AD7915)/500 kSPS (AD7916)


    Original     		PDF MSPS/500 AD7915/AD7916 AD7915 AD7916 AD7915 AD7916) EVAL-AD7915DZå EVAL-AD7916SDZæ RM-10

    CT-A07RN11-LG

    Abstract: CT-A07RN11-PJ A70M CT-A10RN14-PJ CT-A10RN14-LG Atlanta-100 KDM-A CT-A08RN12-LG CT-A08RN12-PJ transwitch
    Text: Atlanta 100 TM 产品 简 介 通信处理器系列 Atlanta 100TM提供一流性能，以最低功耗和物 料单 BOM 成本，为一系列需要IP数据包路 Atlanta 100是一个高度集成的产品系列，结合了RISC处理器 64字节的以太帧实现100 Mbps有线高速路由吞吐量性能，同时


    Original     		PDF 100TM 100RISC Atlanta-100 PCMCIA32PCI RISCMMU200 16FLASH16 16PCM 711LBGA A100M CT-A08RN12-PJ CT-A07RN11-LG CT-A07RN11-PJ A70M CT-A10RN14-PJ CT-A10RN14-LG Atlanta-100 KDM-A CT-A08RN12-LG CT-A08RN12-PJ transwitch

    el 1533

    Abstract: IRFR5410 IRFU5410
    Text: PD - 9.1533 IRFR/U5410 PRELIMINARY HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.205Ω G


    Original     		PDF IRFR/U5410 IRFR5410) IRFU5410) -100V el 1533 IRFR5410 IRFU5410

    OL2R1

    Abstract: AD9856 AD9857 AD9957 345N D1088 A3932 bfi16
    Text: 内置18位I/Q数据路径和14位DAC 的1 GSPS正交数字上变频器 AD9957 特性 概述 1 GSPS内部系统时钟（高达400 MHz模拟输出） 内置1 GSPS 14位DAC 数据吞吐速率：250 MHz I/Q 相位噪声：≤125 dBc/Hz（1 kHz偏移，400 MHz载波）


    Original     		PDF 18I/Q14DAC AD9957 GSPS400 14DAC kHz400 100TQFP AD9857 OL2R1 AD9856 AD9857 AD9957 345N D1088 A3932 bfi16

    irf 100v 200A

    Abstract: IRF9530N 64mh
    Text: IRFR/U5410PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage


    Original     		PDF IRFR/U5410PbF AN-994 O-251AA) IRFU120 irf 100v 200A IRF9530N 64mh

    AT89S2052

    Abstract: tsf 1303 THx 202 pin configuration at89s2052 pwm atmel 0916 PIN DIAGRAM at89lp programmer interface at89lp programmer PSC01 3538A thx 203
    Text: 特性 • 与 MCS 51 系列相兼容的 8 位微控制器 • 增强型 8051 体系结构 • • • • • – 单时钟周期字节取指能力 – 20 MHz 时钟频率下吞吐量达 20 MIPS – 全静态工作 : 0 Hz 到 20 MHz – 片上 2 周期硬件乘法器


    Original     		PDF 16-bit AT89LP213 AT89LP214) AT89LP214 AT89LP213/214 MCS-51 AT89LP213/214 AT89S2052 tsf 1303 THx 202 pin configuration at89s2052 pwm atmel 0916 PIN DIAGRAM at89lp programmer interface at89lp programmer PSC01 3538A thx 203

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		PDF ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055

    MCP79MXT-B3

    Abstract: ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,CORNHOLE,K19 ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE


    Original     		PDF ISL10 ISL11 MCP79MXT-B3 ISL6258A ti c3931 u9701 rtl8211* Reference design L6703 C3931 88E1116R FW643E CS4206A

    ISL9504

    Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
    Text: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF 03/19/m 100-ohm 95-ohms ISL10 ISL11 ISL9504 j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H

    ISL9504

    Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		PDF ISL10 ISL11 ISL9504 ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram

    IRF 55v 200A

    Abstract: IRFR P-Channel MOSFET IRFR5410 IRFU5410 irfr5410pbf irf 100v 200A
    Text: PD -95314A IRFR5410PbF U5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω


    Original     		PDF -95314A IRFR5410PbF IRFU5410PbF IRFR5410) IRFU5410) -100V O-252AA) EIA-481 EIA-541. EIA-481. IRF 55v 200A IRFR P-Channel MOSFET IRFR5410 IRFU5410 irfr5410pbf irf 100v 200A

    e3 sot363 8pin

    Abstract: ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		PDF 01/17/2007ER ISL10 ISL11 e3 sot363 8pin ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225

    PP3V42G3H

    Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007


    Original     		PDF MBP15 ISL10 ISL11 PP3V42G3H apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103

    ISL9504

    Abstract: pg65d U8550 SH0925 DP431 U8500 j4310 vishay CK 67A PP3V42G3H 338S0432
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15" MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		PDF ISL10 ISL11 ISL9504 pg65d U8550 SH0925 DP431 U8500 j4310 vishay CK 67A PP3V42G3H 338S0432

    Untitled

    Abstract: No abstract text available
    Text: PD -95314A IRFR5410PbF U5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (U5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω


    Original     		PDF -95314A IRFR5410PbF IRFU5410PbF IRFR5410) IRFU5410) -100V EIA-481 EIA-541. EIA-481.

    Untitled

    Abstract: No abstract text available
    Text: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V


    OCR Scan     		PDF IRFR/U5410

    U5410

    Abstract: No abstract text available
    Text: PD - 9.1533 International IQR Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5410 • Straight Lead (U5410) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRFR5410) IRFU5410) IRFR/U5410 -100V U5410