BSP75NTA
Abstract: D8154
Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ
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BSP75N
OT223
550mJ
522-BSP75NTA
BSP75NTA
BSP75NTA
D8154
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Untitled
Abstract: No abstract text available
Text: CHIP TYPE THERMISTOR Ϯ Ϯ Ϯ ϫ Њ ⍀ Ϯ ϩ Ϫ Ϯ Ϯ Ϯ Ϯ Ϯ Њ Ϯ Ϯ ϳ ϳ Ϯ Ϯ ϩ Ϯ Ϯ Ϯ Ϯ Ϯ Ϯ Ϯ Ϯ Њ Ϯ Њ Ϯ Њ Ϯ Ϯ Ϯ Њ Ϯ Ϯ Њ ϳ Њ ⍀ ⍀ ⍀ ⍀ Ϯ Ϯ Ϯ Ϯ Њ Њ Ϫ ϳϩ Њ Њ Њ 12
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SSM2141
Abstract: MS-001 MS-013-AA SSM2142 SSM2142PZ SSM2142SZ ssm2142specifications d0149
Text: a FEATURES Transformer-Like Balanced Output Drives 10 V RMS Into a 600 ⍀ Load Stable When Driving Large Capacitive Loads and Long Cables Low Distortion 0.006% typ 20 Hz–20 kHz, 10 V RMS into 600 ⍀ High Slew Rate 15 V/s typ Low Gain Error Differential or Single-Ended ; 0.7% typ
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SSM2142
16-Lead
RW-16
SSM2142
5/11--Rev.
SSM2142--Specifications
D01496-0-5/11
SSM2141
MS-001
MS-013-AA
SSM2142PZ
SSM2142SZ
ssm2142specifications
d0149
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HP11850C
Abstract: 2743002122 100k variable resistor round body AD844AQ AD844B AD844S EIA-481A AD844 AD844A AD844ACHIPS
Text: a FEATURES Wide Bandwidth: 60 MHz at Gain of –1 Wide Bandwidth: 33 MHz at Gain of –10 Very High Output Slew Rate: Up to 2000 V/s 20 MHz Full Power Bandwidth, 20 V p-p, RL = 500 ⍀ Fast Settling: 100 ns to 0.1% 10 V Step Differential Gain Error: 0.03% at 4.4 MHz
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EIA-481A
AD844
16-Lead
HP11850C
2743002122
100k variable resistor round body
AD844AQ
AD844B
AD844S
AD844
AD844A
AD844ACHIPS
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Untitled
Abstract: No abstract text available
Text: Silicon Bipolar MMIC Cascadable Amplifier MA4TD03511 V2.00 Case Style 511 Features Cascadable 50⍀ Gain Block 3 dB Bandwidth: DC to 2.0 GHz 12.1 dB Typical Gain @ 1.0 GHz Unconditionally Stable k>1 Hermetic Gold-Ceramic Microstrip Package Tape and Reel Packaging Available
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MA4TD03511
MA4TD03511
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Untitled
Abstract: No abstract text available
Text: Silicon Bipolar MMIC Cascadable Amplifier MA4TD0935, MA4TD0936 V3.00 Ceramic Microstrip Case Style Outlines 1, 2, 3 Features ● ● ● ● ● ● Available in short lead version as MA4TD0936. Cascadable 50⍀ Gain Block 3 dB Bandwidth: DC to 4.5 GHz 8.0 dB Typical Gain @ 1.0 GHz
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MA4TD0935,
MA4TD0936
MA4TD0936.
MA4TD0935
MA4TD0936
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GS2974
Abstract: 720p50 SDI INTERFACE GS2978 hd-SDI driver GS2975 1080I50 progressive video filter
Text: AUGUST 2006 www.broadcastengineering.com APPLIED TECHNOLOGY NEW PRODUCTS & REVIEWS Gennum’s new chips The equalizer, reclocker and driver are for 3Gb/s video. BY JOHN HUDSON AND NIGEL SETH-SMITH W hen TV networks were first established, video signals were distributed on 75⍀ coaxial
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143Mb/s
97Gb/s.
GS2978.
BE-58-CU
GS2974
720p50
SDI INTERFACE
GS2978
hd-SDI driver
GS2975
1080I50
progressive
video filter
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agilent 8112a
Abstract: ad8369 AD6645 AD8369ARU AD8369ARU-REEL7 AD8369EVAL ETC1-1-13 hexadecimal to Binary
Text: 45 dB Digitally Controlled VGA LF to 600 MHz AD8369* FEATURES Digitally Controlled Variable Gain in 3 dB Steps –5 dB to +40 dB RL = 1 k⍀ –10 dB to +35 dB (RL = 200 ⍀) Less than 0.2 dB Flatness over a +20 MHz Bandwidth up to 380 MHz 4-Bit Parallel or 3-Wire Serial Interface
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AD8369*
AD8369
AD8369
16-Lead
RU-16)
C03029
MO-153AB
agilent 8112a
AD6645
AD8369ARU
AD8369ARU-REEL7
AD8369EVAL
ETC1-1-13
hexadecimal to Binary
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT EMI FILTERS CHIP FILTERS NFM60R Series The NFM60R Series is an EIA standard 1206 size version of the NFM61R. Its high rated current 6A and low voltage drop due to small DC resistance (Typ. 3 ~ 4m⍀) are suitable for DC power line use. The feedthrough capacitor provides
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NFM60R
NFM61R.
NFM60R20T152.
NFM60R
NFM60R00T220
NFM60R00T470
220pF
NFM60R10T471
NFM60R00T221
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ADG749
Abstract: ADG749BKS MO-203AB
Text: a CMOS 1.8 V to 5.5 V, 2.5 ⍀ 2:1 MUX/SPDT Switch in SC70 Package ADG749 FEATURES 1.8 V to 5.5 V Single Supply 5 ⍀ Max On Resistance 0.75 ⍀ (Typ) On Resistance Flatness Automotive Temperature Range: –40؇C to +125؇C –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation
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ADG749
ADG749
C02075
ADG749BKS
MO-203AB
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7805 8PIN
Abstract: ADM8690 ADM8691 ADM8692 ADM8693 ADM8694 ADM8695 MAX690 MAX695 7805 so8
Text: a FEATURES Upgrade for ADM690/ADM695, MAX690–MAX695 Specified Over Temperature Low Power Consumption 0.7 mW Precision Voltage Monitor Reset Assertion Down to 1 V VCC Low Switch On-Resistance 0.7 ⍀ Normal, 7 ⍀ in Backup High Current Drive (100 mA) Watchdog Timer—100 ms, 1.6 s, or Adjustable
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ADM690/ADM695,
MAX690
MAX695
Timer--100
ADM8690
ADM8695
ADM8690
ADM8692
ADM8694
7805 8PIN
ADM8691
ADM8692
ADM8693
ADM8694
ADM8695
MAX695
7805 so8
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ADG774
Abstract: ADG774BR ADG774BRQ MS-012AC R-16 RQ-16
Text: a CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux ADG774 FEATURES Low Insertion Loss and On Resistance: 4 ⍀ Typical On-Resistance Flatness <2 ⍀ Bandwidth >200 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion: <1% Low Quiescent Supply Current 100 nA Typical
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ADG774
100VG-AnyLAN
Mbps/16
ATM25/155
ADG774
MO-137AB
4/03--Data
ADG774BR
ADG774BRQ
MS-012AC
R-16
RQ-16
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equivalent transistor 2N1711
Abstract: MOC3021 application MOC3021 2N1711 AD8402 IN4001 IRGBC40S OP113 OP193 OP284
Text: a FEATURES Temperature Sensor Includes 100 ⍀ Heater Heater Provides Power IC Emulation Accuracy ؎3 Typ from –40؇C to +100؇C Operation to 150؇C 5 mV/؇C Internal Scale-Factor Resistor Programmable Temperature Setpoints 20 mA Open-Collector Setpoint Outputs
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AD9058
Abstract: AD80013 AD8001 AD8001ACHIPS AD8001AN AD8001AR AD8001R-EB AD8001SMD1 4000 watts power amplifier circuit diagram pcb l
Text: a 800 MHz, 50 mW Current Feedback Amplifier AD8001 FEATURES Excellent Video Specifications RL = 150 ⍀, G = +2 Gain Flatness 0.1 dB to 100 MHz 0.01% Differential Gain Error 0.025؇ Differential Phase Error Low Power 5.5 mA max Power Supply Current (55 mW)
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AD8001
AD9058
AD80013
AD8001
AD8001ACHIPS
AD8001AN
AD8001AR
AD8001R-EB
AD8001SMD1
4000 watts power amplifier circuit diagram pcb l
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ZXTP19060CG
Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
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ZXTP19060CG
OT223
-80mV
ZXTN19060CG
OT223
ZXTP19060CGTA
D-81541
ZXTP19060CG
TS16949
ZXTN19060CG
ZXTP19060CGTA
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ADG774A
Abstract: ADG774ABRQ RQ-16
Text: a Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A FEATURES Bandwidth >400 MHz Low Insertion Loss and On Resistance: 2.2 ⍀ Typical On-Resistance Flatness 0.3 ⍀ Typical Single 3 V/5 V Supply Operation Very Low Distortion: <0.3% Low Quiescent Supply Current 1 nA Typical
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ADG774A
ADG774A
MO-137AB
4/03--Data
ADG774ABRQ
RQ-16
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ZXM61N02F
Abstract: ZXM61N02FTA ZXM61N02FTC
Text: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.18⍀; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61N02F
ZXM61N02FTA
ZXM61N02F
ZXM61N02FTA
ZXM61N02FTC
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MO-187
Abstract: ZXMD63P02X ZXMD63P02XTA ZXMD63P02XTC
Text: ZXMD63P02X DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD63P02X
ZXMD6300
MO-187
ZXMD63P02X
ZXMD63P02XTA
ZXMD63P02XTC
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TS16949
Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN25100DZ
100mV
ZXTP25100CZ
D-81541
TS16949
ZXTN25100DZ
ZXTN25100DZTA
ZXTP25100CZ
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MO-187
Abstract: ZXM64P02X ZXM64P02XTA ZXM64P02XTC zxm64p02
Text: ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-20V; RDS(ON)=0.090⍀; ID= -3.5A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM64P02X
ZXM64P02XTA
ZXM64P02XTC
MO-187
ZXM64P02X
ZXM64P02XTA
ZXM64P02XTC
zxm64p02
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ZXMP7A17K
Abstract: ZXMP7A17KTC 7A17
Text: ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V : RDS on =0.16⍀ ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage
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ZXMP7A17K
ZXMP7A17K
ZXMP7A17KTC
7A17
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TS16949
Abstract: ZXMS6002G ZXMS6002GTA
Text: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic
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ZXMS6002G
550mJ
D-81541
TS16949
ZXMS6002G
ZXMS6002GTA
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ZXMN6A09G
Abstract: TS16949 ZXMN6A09GTA
Text: ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 7.5 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast
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ZXMN6A09G
OT223
D-81541
ZXMN6A09G
TS16949
ZXMN6A09GTA
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ADG719
Abstract: ADG719BRM ADG719BRT MO-187AA
Text: a CMOS 1.8 V to 5.5 V, 2.5 ⍀ 2:1 Mux/SPDT Switch in SOT-23 ADG719 FEATURES 1.8 V to 5.5 V Single Supply 4 ⍀ Max On Resistance 0.75 ⍀ (Typ) On Resistance Flatness Automotive Temperature Range: –40°C to +125°C –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation
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OT-23
ADG719
OT-23
ADG719
C00044
ADG719BRM
ADG719BRT
MO-187AA
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