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    550MJ Price and Stock

    Skyworks Solutions Inc 550MJ25M0000DG

    XTAL OSC VCXO 25.0000MHZ LVPECL
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    DigiKey 550MJ25M0000DG 50
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    Mouser Electronics 550MJ25M0000DG
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    Richardson RFPD 550MJ25M0000DG 1
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    Skyworks Solutions Inc 550MJ500M000DG

    XTAL OSCILLATOR
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    DigiKey 550MJ500M000DG 50
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    Mouser Electronics 550MJ500M000DG
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    Richardson RFPD 550MJ500M000DG 1
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    Skyworks Solutions Inc 550MJ156M250DG

    XTAL OSC VCXO 156.2500MHZ LVPECL
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    DigiKey 550MJ156M250DG 50
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    Mouser Electronics 550MJ156M250DG
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    Richardson RFPD 550MJ156M250DG 1
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    Skyworks Solutions Inc 550MJ300M000DG

    XTAL OSC VCXO 300.0000MHZ LVPECL
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    DigiKey 550MJ300M000DG 50
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    Mouser Electronics 550MJ300M000DG
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    Richardson RFPD 550MJ300M000DG 1
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    Skyworks Solutions Inc 550MJ155M520DG

    XTAL OSC VCXO 155.5200MHZ LVPECL
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    DigiKey 550MJ155M520DG 50
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    • 100 $22.5116
    • 1000 $22.5116
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    Mouser Electronics 550MJ155M520DG
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    • 100 $22.1
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    Richardson RFPD 550MJ155M520DG 1
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    550MJ Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    550MJ155M520DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ155M520DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ156M250DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ156M250DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ161M525DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ161M525DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ161M575DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ161M575DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ200M000DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ200M000DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ25M0000DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ25M0000DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ300M000DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ300M000DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ320M000DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ320M000DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ409M600DG Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ409M600DGR Silicon Labs Crystals, Oscillators, Resonators - Oscillators - VCXO; DIFF/SE; SINGLE FREQ; 10-1 Original PDF
    550MJ500M000DG Silicon Laboratories XTAL OSCILLATOR Original PDF
    550MJ500M000DG Skyworks Solutions XTAL OSCILLATOR Original PDF

    550MJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSP75NTA

    Abstract: D8154
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ


    Original     		PDF BSP75N OT223 550mJ 522-BSP75NTA BSP75NTA BSP75NTA D8154

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Text: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		PDF ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA

    BSP75N

    Abstract: 24V PLC BSP75NTA
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ


    Original     		PDF BSP75N OT223 550mJ BSP75N 24V PLC BSP75NTA

    TS16949

    Abstract: ZXMS6002G ZXMS6002GTA
    Text: ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description Self protected low side MOSFET. Monolithic


    Original     		PDF ZXMS6002G 550mJ D-81541 TS16949 ZXMS6002G ZXMS6002GTA

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description


    Original     		PDF ZXMS6003G 550mJ D-81541

    Untitled

    Abstract: No abstract text available
    Text: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION SOT223 PACKAGE Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		PDF BSP75G 550mJ OT223

    BSP75G

    Abstract: No abstract text available
    Text: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		PDF BSP75G 550mJ OT223 SCBSP75GDSC BSP75G

    BSP75N

    Abstract: No abstract text available
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75N 550mJ OT223

    Untitled

    Abstract: No abstract text available
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ


    Original     		PDF BSP75N OT223 550mJ

    ZXMS6003

    Abstract: TS16949 ZXMS6003G ZXMS6003GTA SC36
    Text: ZXMS6003G 60V N-channel self protected enhancement mode IntelliFETTM MOSFET with programmable current limit Summary Continuous drain source voltage VDS = 60V On-state resistance 500m⍀ Nominal load current VIN = 5V 1.4A Clamping energy 550mJ Description


    Original     		PDF ZXMS6003G 550mJ D-81541 ZXMS6003 TS16949 ZXMS6003G ZXMS6003GTA SC36

    Untitled

    Abstract: No abstract text available
    Text: BSP75G 60V N-channel self-protected enhancement mode IntelliFETTM MOSFET Summary Continuous drain source voltage On-state resistance Nominal load current Clamping energy S VDS=60V 550mΩ 1.6A 550mJ D D IN SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage active


    Original     		PDF BSP75G 550mJ OT223

    Untitled

    Abstract: No abstract text available
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223

    522BS

    Abstract: BSP75GTA
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223 522-BSP75GTA BSP75GTA 522BS BSP75GTA

    Untitled

    Abstract: No abstract text available
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223

    BSP75G

    Abstract: BSP75GTA BSP75GTC
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223 BSP75G BSP75GTA BSP75GTC

    BSP75G

    Abstract: No abstract text available
    Text: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over


    Original     		PDF BSP75G 550mJ OT223 BSP75G

    ZXMS6001

    Abstract: TS16949 ZXMS6001N3 ZXMS6001N3TA
    Text: ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On-state resistance 675mΩ Max nominal load current a 1.1A (VIN = 5V) Min nominal load current (c) 0.7A (VIN = 5V) Clamping Energy


    Original     		PDF ZXMS6001N3 550mJ D-81541 ZXMS6001 TS16949 ZXMS6001N3 ZXMS6001N3TA

    NTE2921

    Abstract: No abstract text available
    Text: NTE2921 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID


    Original     		PDF NTE2921 NTE2921

    NTE2900

    Abstract: NTE290
    Text: NTE2900 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A


    Original     		PDF NTE2900 NTE2900 NTE290

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On-state resistance 675mΩ Max nominal load current a 1.1A (VIN = 5V) Min nominal load current (c) 0.7A (VIN = 5V) Clamping Energy


    Original     		PDF ZXMS6001N3 550mJ D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On-state resistance 675mΩ Max nominal load current a 1.1A (VIN = 5V) Min nominal load current (c) 0.7A (VIN = 5V) Clamping Energy


    Original     		PDF ZXMS6001N3 550mJ D-81541

    Untitled

    Abstract: No abstract text available
    Text: VZETIX SEMICONDUCTORS BSP75G 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V ds=60V On-state resistance 550m O Nominal load current 1.4A V|N = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. M onolithic over tem perature, over


    OCR Scan     		PDF BSP75G 550mJ OT223