Untitled
Abstract: No abstract text available
Text: IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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IRFR/U220A
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRLR/U220A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.6 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
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IRLR/U220A
O-251
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U220A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRLR/U220A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.6 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
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IRLR/U220A
O-252
U220A
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U220A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRLR/U220A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.6 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
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IRLR/U220A
U220A
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IRLRU220A
Abstract: No abstract text available
Text: IRLR/U220A A d vanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q CD •Si ^D S o n = ll ♦ Rugged Gate Oxide Technology 0 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area
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IRLR/U220A
IRLRU220A
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Untitled
Abstract: No abstract text available
Text: IRFR/U220A Advanced Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0 . 8 Î2 ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V ■ Low RDS(ON) : 0.626 £l(Typ.)
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IRFR/U220A
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Untitled
Abstract: No abstract text available
Text: IRFR/U220A A dvanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jaA Max @ Low Ro^om) •' 0.632 £2 (Typ.)
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IRFR/U220A
300nF
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Untitled
Abstract: No abstract text available
Text: IRFR/U220A Advanced Power M O SFET FEATURES B V D SS R u g g e d G a te O x id e T e c h n o lo g y • L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n = ■ E x te n d e d S a fe O p e ra tin g A re a ■ L o w e r L e a k a g e C u rre n t : 10 |jA (M a x .) @
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IRFR/U220A
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Untitled
Abstract: No abstract text available
Text: IRLR/U220A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V
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IRLR/U220A
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c2028
Abstract: No abstract text available
Text: IRLR/U220A A d va n ce d Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 4.6 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jiA (Max.) @ VDS= 200V
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IRLR/U220A
c2028
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Untitled
Abstract: No abstract text available
Text: IRFR/U220A Advanced Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V ■ Low RDS(ON) : 0.626 £l(Typ.)
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IRFR/U220A
Fig15.
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Untitled
Abstract: No abstract text available
Text: IRLR/U220A Advanced Power MOSFET FEATURES B ^D S S - 200 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology CD •'t Q II ♦ Lower Input Capacitance 0 .8 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 200V
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IRLR/U220A
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Untitled
Abstract: No abstract text available
Text: IRFR/U220A Advanced Power MOSFET FEATURES BVd ss = 2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax @ VOS= 200V
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IRFR/U220A
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EZ-34
Abstract: IRFM120A U2N60
Text: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A
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IRFW/IZ14A
IRFW/IZ24A
IRFW/EZ34A
IRFW/IZ44A
IRFW/I510A
ERFW/I520A
IRFW/I530A
FRFW/I540A
IRFWfl550A
IRFW/I610A
EZ-34
IRFM120A
U2N60
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