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    U 343M Search Results

    U 343M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    343MPLF Renesas Electronics Corporation Field Programmable Triple Output SS VersaClock Synthesizer Visit Renesas Electronics Corporation
    343MPLFT Renesas Electronics Corporation Field Programmable Triple Output SS VersaClock Synthesizer Visit Renesas Electronics Corporation
    343MIPLF Renesas Electronics Corporation Field Programmable Triple Output SS VersaClock Synthesizer Visit Renesas Electronics Corporation
    343MIPLFT Renesas Electronics Corporation Field Programmable Triple Output SS VersaClock Synthesizer Visit Renesas Electronics Corporation
    LM20343MHE/NOPB Texas Instruments 4.5-36V, 3A Current Mode Synchronous Buck Regulator with Adjustable Frequency 20-HTSSOP -40 to 125 Visit Texas Instruments Buy
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    U 343M Price and Stock

    Analog Devices Inc MAX6343MUT+T

    Supervisory Circuits 6-Pin P Reset Circuit with Power-Fail Comparator
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MAX6343MUT+T 2,578
    • 1 $5.27
    • 10 $3.21
    • 100 $2.69
    • 1000 $2.39
    • 10000 $2.39
    Buy Now

    United Chemi-Con Inc ERWX401LGC343MGT0U

    Aluminum Electrolytic Capacitors - Screw Terminal
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ERWX401LGC343MGT0U
    • 1 -
    • 10 $430.22
    • 100 $407.61
    • 1000 $407.61
    • 10000 $407.61
    Get Quote

    U 343M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SLI-343M8G Data Sheet SLI-343 8 Series EXCELED Features ・Viewing angle 2θ 1/2 : 40° ・High brightness ・Low current consumption Color Type ・Competent to direct mount V U D Y M P Specifications Viewing angle 2θ 1/2 / 40 : EXCELED™ Chip Structure


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    PDF SLI-343M8G SLI-343 R1120A

    Untitled

    Abstract: No abstract text available
    Text: SLI-343M8C Data Sheet SLI-343 8 Series EXCELED Features ・Viewing angle 2θ 1/2 : 40° ・High brightness ・Low current consumption Color Type ・Competent to direct mount V U D Y M P Specifications Viewing angle 2θ 1/2 / 40 : EXCELED™ Chip Structure


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    PDF SLI-343M8C SLI-343 R1120A

    sli-343

    Abstract: No abstract text available
    Text: SLI-343MC Data Sheet SLI-343 Series Features ・Viewing angle 2θ 1/2 : 40° ・High brightness Color Type ・Competent to direct mount U D Y M Specifications Viewing angle 2θ 1/2 / 40 : High luminous intensity Chip Structure Part No. • SLI-343URC Absolute Maximum Ratings Ta=25℃


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    PDF SLI-343MC SLI-343 R1120A

    Untitled

    Abstract: No abstract text available
    Text: SLI-343MG Data Sheet SLI-343 Series Features ・Viewing angle 2θ 1/2 : 40° ・High brightness Color Type ・Competent to direct mount U D Y M Specifications Viewing angle 2θ 1/2 / 40 : High luminous intensity Chip Structure Part No. • SLI-343URC Absolute Maximum Ratings Ta=25℃


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    PDF SLI-343MG SLI-343 R1120A

    74CB218ARTR

    Abstract: 7150MLF 1892YLF MK1726-01SLFTR 1893bflf 5V551DCGI MK9170 1522MLF PDN MK9170-01CS08LF 343MPLFT
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: U-09-01 Last Buy Deadline for Submission of Order: 13-May-2009


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    PDF U-09-01 13-May-2009 13-May-2010 13-Aug-2010 DISCONTI74CB218R MK74CB218RTR MK74CB44R MK74CB44RTR MK74CG117BF MK5818SLFTR 74CB218ARTR 7150MLF 1892YLF MK1726-01SLFTR 1893bflf 5V551DCGI MK9170 1522MLF PDN MK9170-01CS08LF 343MPLFT

    PVP134

    Abstract: No abstract text available
    Text: U N I V ERSAL BACKPLAN ES Alzanti have designed and are now manufacturing a range of Universal Backplanes for use in the high speed assembly and prototyping of 3U ‘Eurorack’ systems. The Eurocard compatible DIN41612 series connector is converted to a convenient screw terminal interface


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    PDF DIN41612 PVP183 PVP193 PVP191, PVP195A, PVP195A 32way PVP134

    tic 2260

    Abstract: F63TNR FDS6575 L86Z
    Text: FAIRCHILD S E M I C O N D U C T O R November 1998 tm FDS65 75 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T h is P -C h a n n e l Logic Level M O S F E T is pro d u ce d u s in g F a irchild S e m ic o n d u c to r's a d v a n c e d P o w e rT re n ch


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    PDF FDS65 tic 2260 F63TNR FDS6575 L86Z

    tic 2260

    Abstract: MARKING W1 AD CBVK741B019 F63TNR FDS6375 FDS9953A L86Z MARKING code F050
    Text: =M l C O N D U C T O R tm FDS6375 Single P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h is P -C h a n n e l 2 .5 V s p e c ifie d M O S F E T is p ro d u ce d u s in g F a ir c h ild S e m ic o n d u c t o r 's advanced P o w e rT re n c h pro c e s s th a t has been e s p e c ia lly ta ilo re d


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    PDF FDS6375 tic 2260 MARKING W1 AD CBVK741B019 F63TNR FDS6375 FDS9953A L86Z MARKING code F050

    tic 2260

    Abstract: F63TNR FDS6675 L86Z
    Text: FAIRCHILD October 1998 SEMICONDUCTOR t m FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T h is P -C h a n n e l Lo gic Level M O S F E T is p ro d u ce d u s in g F a irch ild S e m ic o n d u c to r's a d v a n c e d P o w e rT re n ch


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    PDF FDS6675 tic 2260 F63TNR FDS6675 L86Z

    Untitled

    Abstract: No abstract text available
    Text: ,V U .g July 1999 U M fc P A I R C H I L_D FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified M OSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored


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    PDF FDS6890A

    Untitled

    Abstract: No abstract text available
    Text: EMl C O N D U C TO R ! FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the va rio u s peripheral vo lta ge rails required in notebook


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    PDF FDS6982 FDS6982

    Supersot6

    Abstract: ld18a d872 SSOT-6 MARKING W1 AD CBVK741B019 F63TNR FDC6506P
    Text: =M l C O N D U C T O R tm FDC6506P Dual P-Channel Logic Level PowerTrench MOSFET General Description Features These P-Channel logic level MOSFETs are produced using F airch ild S e m ico n d u cto r's ad va nce d Pow erTrench process that has been especially tailored to m inimize


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    PDF FDC6506P 30VRDS Supersot6 ld18a d872 SSOT-6 MARKING W1 AD CBVK741B019 F63TNR FDC6506P

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDR836P P-Channel 2.5V Specified MOSFET General Description Features S u p e rS O T -8 P -C hannel en han cem en t m ode power • -6.1 A, -2 0 V. R ds on = 0 .0 3 0 W @ V QS = -4 .5 V field effect transistors are produced using Fairchild’s


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    PDF FDR836P

    supersot-3

    Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET MARKING W1 AD 100MS FDN360P SSOT-23
    Text: EM I C O N D U C T O R tm FDN360P Single P-Channel PowerTrench MOSFET General Description Features T h is P -C h a n n e l Lo gic Level M O S F E T is p ro d u c e d using Fairchild S em iconductor's advanced Pow erTrench process th a t ha s been e s p e c ia lly ta ilo re d to m in im iz e o n -s ta te


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    PDF FDN360P 0220i supersot-3 Single P-Channel, Logic Level, PowerTrench MOSFET MARKING W1 AD 100MS FDN360P SSOT-23

    5l 0380

    Abstract: sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
    Text: 1999 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e se P -G hannel 2.5V s pe cified M O S FETs are produced using Fairchild S e m ic o n d u c to r's a d v a n c e d P ow erT ren ch p rocess th a t ha s been e s p e c ia lly ta ilo re d to m in im ize th e


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    PDF FDR838P 43iR-RÃ 5l 0380 sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDC642P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state


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    PDF FDC642P te20/-0

    Untitled

    Abstract: No abstract text available
    Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


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    PDF FDC6306P

    tic 2260

    Abstract: tnr 221 CBVK741B019 F63TNR FDS6961 FDS6961A FDS9953A L86Z
    Text: FAIRCHILD M IC D N D U C T D H April 1999 tm FDS6961 A Dual N-Channel Logic Level PowerTrench General Description MOSFET Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been


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    PDF FDS6961 tic 2260 tnr 221 CBVK741B019 F63TNR FDS6961A FDS9953A L86Z

    d872

    Abstract: Supersot6 MARKING code GM SOT 323 CF 331 SSOT-6 Supersot 6 MARKING W1 AD CBVK741B019 F63TNR FDC6306P
    Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize


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    PDF FDC6306P d872 Supersot6 MARKING code GM SOT 323 CF 331 SSOT-6 Supersot 6 MARKING W1 AD CBVK741B019 F63TNR FDC6306P

    F63TNR

    Abstract: L86Z NDS9435A
    Text: FAIRCHILD S E M IC O N D U C T O R May 1996 tm NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high


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    PDF NDS9435A n-27lTYp F63TNR L86Z NDS9435A

    VEB Keramische Werke

    Abstract: Keramische Werke Hermsdorf Manifer 183 VEB Kombinat zf filter Ringkerne DDR DDR-102 keramische werke hermsdorf spulen Schalenkerne HERMSDORF EE-55 FERRITE
    Text: FERRITE-HANDBUCH K WH KOM BINAT VEB KERAM ISCHE W ERK E HERM SDORF/THÜR. DEUTSCHE DEMOKRATISCHE REPU BLIK A U S G A B E 1970 Abbildungen und Werte gelten nur bedingt als Unterlagen für Bestellungen. Rechtsverbindlich ist jeweils die Auftragsbestätigung.


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    PDF DDR-102 DDR-653 111/18/2-1429S VEB Keramische Werke Keramische Werke Hermsdorf Manifer 183 VEB Kombinat zf filter Ringkerne DDR keramische werke hermsdorf spulen Schalenkerne HERMSDORF EE-55 FERRITE

    R8V mark sot 23

    Abstract: FZ 300 R 06 KL optron CBVK741B019 F63TNR NDH8321C
    Text: January 1999 FAIRCHILD :M l C O N D U C T O R NDH8321 C Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description T h ese dual N- and P -Channel enhancem ent mode power field effect transistors are produced using Fairchild's


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    PDF NDH8321 43iR-RÃ R8V mark sot 23 FZ 300 R 06 KL optron CBVK741B019 F63TNR NDH8321C

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDN342P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized


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    PDF FDN342P OT-23) otherwise91

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C TO R tm FDS5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


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    PDF FDS5670