200B
Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA211001E
PTFA211001E
100-watt,
H-30248-2
200B
BCP56
LM7805
infineon gold
P2KECT-ND
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d 417 transistor
Abstract: No abstract text available
Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA211001E
PTFA211001F
100-watt,
PTFA211001F*
d 417 transistor
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huang 50v 22uf
Abstract: hec specification SCC2211X102K502T Internal MLCC cracking result serious failure mode 223k x7r 50 snubber 223k C1210X 0402 X7R 100NF 25v capacitor 270pF, 4KV 223K 50V X7R 0805
Text: Holy Stone Enterprise Co., Ltd. CERAMIC CAPACITOR CATALOGUE 2010/11 www.holystone.com.tw www.holystonecaps.com • Introduction •The Company Holy Stone Enterprise Company Ltd Holy Stone was established in June of 1981 as an agent and distributor of electronic components.
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TDK capacitors 4.7uF 0201
Abstract: Electric Double Layer Capacitors, Radial Lead Type f 1.ok MD 250v tdk disc capacitors cc series CAP 4.7uF 10 16V X7R 1206 SOFT TERM
Text: Ver. A14 – Mar. 2014 TABLE OF CONTENTS 2 Message to Customers 3-4 Product Line Summary 5-6 Catalog Number Description 7 - 24 Series Summary 7 General Voltage 8 Mid Voltage 9 High Voltage 10 High Temperature 11 MEGACAP Type 12 Soft Termination 13 Open Mode
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Untitled
Abstract: No abstract text available
Text: Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N2200 dielectric with an energy density that exceeds conventional Class I materials. R3L has a predictable negative temperature
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16Vdc
N2200
RF0505
RF1111
RF2525
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marking code r2d
Abstract: 102. 1kv
Text: Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N2200 dielectric with an energy density that exceeds conventional Class I materials. R3L has a predictable negative temperature coefficient, low loss,
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16Vdc
N2200
marking code r2d
102. 1kv
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PTFA043002E
Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
PTFA043002E
LM7805
type 103 capacitor, 2kv RF, 1300 pf
BCP56
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PTFA043002
Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The
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PTFA043002E
PTFA043002
300-watt,
H-30275-4
PTFA043002E
SCHEMATIC DIAGRAM 3.3kv
type 103 capacitor, 2kv RF, 1300 pf
marking us capacitor pf l1
BCP56
LM7805
300WPEP
P33K
TRANSISTOR 023 3010
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po111
Abstract: ELNA capacitor 100 uf 50v transistor a09
Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201GL
PTFA091201HL
PTFA091201HL
120-watt
PG-63248-2
PG-64248-2
po111
ELNA capacitor 100 uf 50v
transistor a09
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1 HP SINGLE PHASE induction motor wiring diagram
Abstract: RR2A40HA150 AC53a 2.2 kW motors TRS20R20A RR2A48D550 RR2A40HA400 RR2A48D220 RR2A48LA550 ha 80 Ferraz
Text: Motor Controllers Industrial, 2-Phase Motor Reversing Type RR2A • Motor reversing for 3-phase induction motors up to 5.5 kW • Rated operational voltage: Up to 480 VACrms • Built-in interlock function • DC or AC control voltage • Built-in voltage transient protection
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BCP56
Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201GL
PTFA091201HL
PTFA091201GL
PTFA091201HL
120-watt
PG-63248-2
PG-64248-2
BCP56
LM7805
A0912
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PTFA043002E
Abstract: SCHEMATIC DIAGRAM 3.3kv
Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold
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PTFA043002E
PTFA043002
300-watt,
PTFA043002E
SCHEMATIC DIAGRAM 3.3kv
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1 HP SINGLE PHASE induction motor wiring diagram
Abstract: AC53a RR2A40D150 RR2A48D550 RR2A48D220 5,5 KW asynchronous HP-550 Ferraz Shawmut 4A 14 x 51 mm 5.5KW induction motor TRS20R20A
Text: Motor Controllers Industrial, 2-Phase Motor Reversing Type RR2A • Motor reversing for 3-phase induction motors up to 5.5 kW • Rated operational voltage: Up to 480 VACrms • Built-in interlock function • DC control voltage • Built-in voltage transient protection
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PTFA210601E
Abstract: No abstract text available
Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier
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PTFA210601F
60watt,
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BCP56
Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201F
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120-watt
H-36248-2
H-37248-2
BCP56
LM7805
PTFA091201EV4
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PTFA240451E
Abstract: 200B BCP56 LM7805
Text: PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging
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45-watt,
CDMA2000
H-30265-2
-66stances.
200B
BCP56
LM7805
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capacitor 203 1KV
Abstract: PTFA210601E 200B BCP56 LM7805 infineon gold PD 550 L5
Text: PTFA210601E Thermally-Enhanced High Power RF LDMOS FET 60 W, 2110 – 2170 MHz Description The PTFA210601E is a thermally-enhanced, 60-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from
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PTFA210601E
PTFA210601E
60-watt,
capacitor 203 1KV
200B
BCP56
LM7805
infineon gold
PD 550 L5
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Untitled
Abstract: No abstract text available
Text: Commercial Chip - C0G 16Vdc to 10kVdc A range of commercial MLC chip capacitors in Ultra stable EIA Class I C0G, or NP0, dielectric. C0G chips are used in precision circuitry requiring Class I stability and exhibit linear temperature coefficient, low loss and stable electrical properties with time,
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RF0505
RF1111
RF2525
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capacitor 332 10kv
Abstract: marking R2D 224 K capacitor
Text: Commercial Chip - C0G 16Vdc to 10kVdc Standard EIA case sizes and available C/V values are listed below - special sizes, thicknesses and other voltage ratings are available; please contact the sales office for information. A range of commercial MLC chip capacitors in Ultra stable EIA
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marking R2D
224 K capacitor
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Untitled
Abstract: No abstract text available
Text: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2420 to 2480 MHz. Thermallyenhanced packaging provides the coolest operation available. Full
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PTFA240451F
45-watt,
CDMA2000
PTFA240451F*
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ptfa210601ev4
Abstract: 103 1KV CERAMIC CAPACITOR BCP56 LM7805 PTFA210601E PTFA210601F
Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input
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PTFA210601E
PTFA210601F
PTFA210601E
PTFA210601F
60-watt
ptfa210601ev4
103 1KV CERAMIC CAPACITOR
BCP56
LM7805
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LM7805
Abstract: ptfa091201e BCP56 PTFA091201F
Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and
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120-watt,
LM7805
BCP56
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capacitor 472 2kv
Abstract: capacitor 332 10kv
Text: Commercial Chip - X7R 16Vdc to 10kVdc Standard EIA case sizes and available C/V values are listed below - special sizes, thicknesses and other voltage ratings are available; please contact the sales office for information. A range of commercial MLC chip capacitors in Stable EIA Class
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capacitor 332 10kv
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capacitor 104 12KV
Abstract: PTFA240451E LM7805
Text: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally-matched GOLDMOS FETs intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz.
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PTFA240451E
PTFA240451F
45-watt,
CDMA2000
H-30265-2
PTFA240451F*
H-31265-2
capacitor 104 12KV
LM7805
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