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    TYPE 103 CAPACITOR, 2KV RF Search Results

    TYPE 103 CAPACITOR, 2KV RF Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ102MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    TYPE 103 CAPACITOR, 2KV RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200B

    Abstract: BCP56 LM7805 PTFA211001E infineon gold P2KECT-ND
    Text: PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


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    PDF PTFA211001E PTFA211001E 100-watt, H-30248-2 200B BCP56 LM7805 infineon gold P2KECT-ND

    d 417 transistor

    Abstract: No abstract text available
    Text: PTFA211001E PTFA211001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 2110 – 2170 MHz Description The PTFA211001E and PTFA211001F are thermally-enhanced, 100-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


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    PDF PTFA211001E PTFA211001F 100-watt, PTFA211001F* d 417 transistor

    huang 50v 22uf

    Abstract: hec specification SCC2211X102K502T Internal MLCC cracking result serious failure mode 223k x7r 50 snubber 223k C1210X 0402 X7R 100NF 25v capacitor 270pF, 4KV 223K 50V X7R 0805
    Text: Holy Stone Enterprise Co., Ltd. CERAMIC CAPACITOR CATALOGUE 2010/11 www.holystone.com.tw www.holystonecaps.com • Introduction •The Company Holy Stone Enterprise Company Ltd Holy Stone was established in June of 1981 as an agent and distributor of electronic components.


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    PDF

    TDK capacitors 4.7uF 0201

    Abstract: Electric Double Layer Capacitors, Radial Lead Type f 1.ok MD 250v tdk disc capacitors cc series CAP 4.7uF 10 16V X7R 1206 SOFT TERM
    Text: Ver. A14 – Mar. 2014 TABLE OF CONTENTS 2 Message to Customers 3-4 Product Line Summary 5-6 Catalog Number Description 7 - 24 Series Summary 7 General Voltage 8 Mid Voltage 9 High Voltage 10 High Temperature 11 MEGACAP Type 12 Soft Termination 13 Open Mode


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    Untitled

    Abstract: No abstract text available
    Text: Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N2200 dielectric with an energy density that exceeds conventional Class I materials. R3L has a predictable negative temperature


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    PDF 16Vdc N2200 RF0505 RF1111 RF2525

    marking code r2d

    Abstract: 102. 1kv
    Text: Commercial Chip - R3L 16Vdc to 5kVdc A range of commercial MLC chip capacitors in R3L dielectric. This is a Class I temperature compensating N2200 dielectric with an energy density that exceeds conventional Class I materials. R3L has a predictable negative temperature coefficient, low loss,


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    PDF 16Vdc N2200 marking code r2d 102. 1kv

    PTFA043002E

    Abstract: PTFA043002 LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


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    PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E LM7805 type 103 capacitor, 2kv RF, 1300 pf BCP56

    PTFA043002

    Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The


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    PDF PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010

    po111

    Abstract: ELNA capacitor 100 uf 50v transistor a09
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


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    PDF PTFA091201GL PTFA091201HL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 po111 ELNA capacitor 100 uf 50v transistor a09

    1 HP SINGLE PHASE induction motor wiring diagram

    Abstract: RR2A40HA150 AC53a 2.2 kW motors TRS20R20A RR2A48D550 RR2A40HA400 RR2A48D220 RR2A48LA550 ha 80 Ferraz
    Text: Motor Controllers Industrial, 2-Phase Motor Reversing Type RR2A • Motor reversing for 3-phase induction motors up to 5.5 kW • Rated operational voltage: Up to 480 VACrms • Built-in interlock function • DC or AC control voltage • Built-in voltage transient protection


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    BCP56

    Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


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    PDF PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912

    PTFA043002E

    Abstract: SCHEMATIC DIAGRAM 3.3kv
    Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold


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    PDF PTFA043002E PTFA043002 300-watt, PTFA043002E SCHEMATIC DIAGRAM 3.3kv

    1 HP SINGLE PHASE induction motor wiring diagram

    Abstract: AC53a RR2A40D150 RR2A48D550 RR2A48D220 5,5 KW asynchronous HP-550 Ferraz Shawmut 4A 14 x 51 mm 5.5KW induction motor TRS20R20A
    Text: Motor Controllers Industrial, 2-Phase Motor Reversing Type RR2A • Motor reversing for 3-phase induction motors up to 5.5 kW • Rated operational voltage: Up to 480 VACrms • Built-in interlock function • DC control voltage • Built-in voltage transient protection


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    PTFA210601E

    Abstract: No abstract text available
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are thermally-enhanced, 60watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


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    PDF PTFA210601E PTFA210601F 60watt, PTFA210601F*

    BCP56

    Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
    Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


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    PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt H-36248-2 H-37248-2 BCP56 LM7805 PTFA091201EV4

    PTFA240451E

    Abstract: 200B BCP56 LM7805
    Text: PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging


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    PDF PTFA240451E PTFA240451E 45-watt, CDMA2000 H-30265-2 -66stances. 200B BCP56 LM7805

    capacitor 203 1KV

    Abstract: PTFA210601E 200B BCP56 LM7805 infineon gold PD 550 L5
    Text: PTFA210601E Thermally-Enhanced High Power RF LDMOS FET 60 W, 2110 – 2170 MHz Description The PTFA210601E is a thermally-enhanced, 60-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


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    PDF PTFA210601E PTFA210601E 60-watt, capacitor 203 1KV 200B BCP56 LM7805 infineon gold PD 550 L5

    Untitled

    Abstract: No abstract text available
    Text: Commercial Chip - C0G 16Vdc to 10kVdc A range of commercial MLC chip capacitors in Ultra stable EIA Class I C0G, or NP0, dielectric. C0G chips are used in precision circuitry requiring Class I stability and exhibit linear temperature coefficient, low loss and stable electrical properties with time,


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    PDF 16Vdc 10kVdc Silver-palladium400 RF0505 RF1111 RF2525

    capacitor 332 10kv

    Abstract: marking R2D 224 K capacitor
    Text: Commercial Chip - C0G 16Vdc to 10kVdc Standard EIA case sizes and available C/V values are listed below - special sizes, thicknesses and other voltage ratings are available; please contact the sales office for information. A range of commercial MLC chip capacitors in Ultra stable EIA


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    PDF 16Vdc 10kVdc capacitor 332 10kv marking R2D 224 K capacitor

    Untitled

    Abstract: No abstract text available
    Text: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2420 to 2480 MHz. Thermallyenhanced packaging provides the coolest operation available. Full


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    PDF PTFA240451E PTFA240451F 45-watt, CDMA2000 PTFA240451F*

    ptfa210601ev4

    Abstract: 103 1KV CERAMIC CAPACITOR BCP56 LM7805 PTFA210601E PTFA210601F
    Text: PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input


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    PDF PTFA210601E PTFA210601F PTFA210601E PTFA210601F 60-watt ptfa210601ev4 103 1KV CERAMIC CAPACITOR BCP56 LM7805

    LM7805

    Abstract: ptfa091201e BCP56 PTFA091201F
    Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and


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    PDF PTFA091201E PTFA091201F PTFA091201E PTFA091201F 120-watt, LM7805 BCP56

    capacitor 472 2kv

    Abstract: capacitor 332 10kv
    Text: Commercial Chip - X7R 16Vdc to 10kVdc Standard EIA case sizes and available C/V values are listed below - special sizes, thicknesses and other voltage ratings are available; please contact the sales office for information. A range of commercial MLC chip capacitors in Stable EIA Class


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    PDF 16Vdc 10kVdc capacitor 472 2kv capacitor 332 10kv

    capacitor 104 12KV

    Abstract: PTFA240451E LM7805
    Text: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally-matched GOLDMOS FETs intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz.


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    PDF PTFA240451E PTFA240451F 45-watt, CDMA2000 H-30265-2 PTFA240451F* H-31265-2 capacitor 104 12KV LM7805