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    PTFA240451E Price and Stock

    Infineon Technologies AG PTFA240451E V1

    RF MOSFET LDMOS 28V H-30265-2
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    DigiKey PTFA240451E V1 Tray
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    Infineon Technologies AG PTFA240451E V1 R250

    RF MOSFET LDMOS 28V H-30265-2
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    PTFA240451E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFA240451E Infineon Technologies 2400 MHz to 2700 MHz; Package: PG:H-30256-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,420.0 - 2,480.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA240451E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-30265-2 Original PDF
    PTFA240451EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-30265-2 Original PDF
    PTFA240451EV1R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-30265-2 Original PDF
    PTFA240451E V1 R250 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-30265-2 Original PDF

    PTFA240451E Datasheets Context Search

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    capacitor 104 12KV

    Abstract: PTFA240451E LM7805
    Text: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally-matched GOLDMOS FETs intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz.


    Original     		PDF PTFA240451E PTFA240451F 45-watt, CDMA2000 H-30265-2 PTFA240451F* H-31265-2 capacitor 104 12KV LM7805

    Untitled

    Abstract: No abstract text available
    Text: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2420 to 2480 MHz. Thermallyenhanced packaging provides the coolest operation available. Full


    Original     		PDF PTFA240451E PTFA240451F 45-watt, CDMA2000 PTFA240451F*

    PTFA240451E

    Abstract: 200B BCP56 LM7805
    Text: PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging


    Original     		PDF PTFA240451E PTFA240451E 45-watt, CDMA2000 H-30265-2 -66stances. 200B BCP56 LM7805

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503