S3060
Abstract: No abstract text available
Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
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Original
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PDF
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S060A6.
TY059S060A6OT
TY078S060A6PU
TY085S060A6OU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S3060
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Untitled
Abstract: No abstract text available
Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
|
Original
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PDF
|
S060A6.
TY059S060A6OT
TY078S060A6PU
TY085S060A6OU
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM
|
Original
|
PDF
|
S060A6.
TY059S060A6OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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