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    US5U30

    Abstract: No abstract text available
    Text: US5U30 Transistor 2.5V Drive Pch+SBD MOS FET US5U30 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 0.15Max. 0.85Max. 1.3 0.65 0.65 1pin mark zFeatures 1) The US5U30 combines Pch MOS FET with a


    Original     		PDF US5U30 15Max. 85Max. US5U30

    TUMT5

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 15Max. US5L10 85Max. TUMT5

    Untitled

    Abstract: No abstract text available
    Text: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package


    Original     		PDF US5L12 2SD2675 RB461F 85Max. 15Max. US5L12

    Untitled

    Abstract: No abstract text available
    Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver 1.3 0.2Max. 2.0 Features 1) Tr : Low VCE(sat)


    Original     		PDF US5L10 2SD2674 RB461F

    Untitled

    Abstract: No abstract text available
    Text: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.


    Original     		PDF US5U35 US5U35

    US5U29

    Abstract: No abstract text available
    Text: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a


    Original     		PDF US5U29 US5U29 15Max. 85Max.

    Untitled

    Abstract: No abstract text available
    Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode


    Original     		PDF 15Max. 85Max.

    Untitled

    Abstract: No abstract text available
    Text: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    125 diode

    Abstract: US5U30
    Text: US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching.


    Original     		PDF US5U30 US5U30 125 diode

    Untitled

    Abstract: No abstract text available
    Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    2SB1710

    Abstract: RB461F US5L11 TUMT5
    Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2


    Original     		PDF US5L11 2SB1710 RB461F 85Max. 15Max. US5L11 TUMT5

    mosfet with schottky body diode

    Abstract: MOSFET dynamic parameters
    Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF

    2SD2674

    Abstract: RB461F US5L10 TUMT5 marking code L10
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 85Max. 15Max. US5L10 TUMT5 marking code L10

    Untitled

    Abstract: No abstract text available
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver 1.3 Features 1) Tr : Low VCE(sat) Di : Low VF


    Original     		PDF 2SB1709 RB461F

    Untitled

    Abstract: No abstract text available
    Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver 1.3 zFeatures 1) Tr : Low VCE(sat)


    Original     		PDF US5L11 2SB1710 RB461F US5L11

    MARKING L09

    Abstract: No abstract text available
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1709 RB461F 15Max. 85Max. 1000m MARKING L09

    2SB1709

    Abstract: RB461F
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1709 RB461F 85Max. 15Max.

    Untitled

    Abstract: No abstract text available
    Text: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Dimensions Unit : mm TUMT5 2.0 Features 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.


    Original     		PDF US5U35 US5U35

    Untitled

    Abstract: No abstract text available
    Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. External dimensions (Unit : mm) (1) (5) 0.2 Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package


    Original     		PDF US5L12 2SD2675 RB461F 85Max. 15Max.

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.


    Original     		PDF 15Max. 85Max.

    125 diode

    Abstract: US5U29
    Text: US5U29 Transistor 2.5V Drive Pch+SBD MOSFET US5U29 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U29 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching.


    Original     		PDF US5U29 US5U29 125 diode

    Untitled

    Abstract: No abstract text available
    Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.


    Original     		PDF