TTL NAND GATE TWIN Search Results

TTL NAND GATE TWIN Result Highlights (5)

Part	Manufacturer	Description
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TB67H481FTG	Toshiba Electronic Devices & Storage Corporation	Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32
GT30J110SRA	Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC

TTL NAND GATE TWIN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor nd8 Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24 Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.	Original	ISB28000 transistor nd8 BT4R bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24	PDF
CB12000 Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18 Text: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)	Original	CB22000 CB12000 cd 4847 bt8c dc to ac inverter schematic ld3p FD11S FD3S BUT12 BUT18	PDF
AO4L Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1 Text: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells	Original	MTC-35000 102ps 216ps AO4L ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1	PDF
TMS 3766 Abstract: transistors 1UW AN1521 ao21 mx618 MX61H AOI21 H4EP012 H4EP044 H4EP171 Text: Order this Data Sheet by H4EP/D MOTOROLA bu SEMICONDUCTOR TECHNICAL DATA H4EPlus SERIES Advanced Information H4EPlus SERIES CMOS ARRAYS The H4EPlus Series arrays offer a fully featured 3.3V, 5V and mixed voltage capable family combined with an increased core density providing over 50% more	Original		PDF
hp laptop inverter board schematic Abstract: dilmon hp laptop inverter SCHEMATIC laptop inverter SCHEMATIC TRANSISTOR DS3535 PLESSEY CLA Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS AUGUST 1992 DS3535 - 1.0 CLA70000V LOW VOLTAGE SPECIFICATION 1.0µ CMOS GATE ARRAYS FEATURES • Operates at 3.3V ■ 1.0µ 0.8µ Leff twin well, epitaxial CMOS process	Original	DS3535 CLA70000V are455 hp laptop inverter board schematic dilmon hp laptop inverter SCHEMATIC laptop inverter SCHEMATIC TRANSISTOR PLESSEY CLA	PDF
full subtractor circuit using decoder Abstract: full subtractor circuit using nor gates tdb 158 dp VHDL program 4-bit adder 8 bit carry select adder verilog codes full subtractor circuit using nand gate full adder circuit using nor gates full subtractor circuit using nand gates full subtractor circuit nand gates 0-99 counter by using 4 dual jk flip flop Text: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This	Original	CLA70000 DS2462 full subtractor circuit using decoder full subtractor circuit using nor gates tdb 158 dp VHDL program 4-bit adder 8 bit carry select adder verilog codes full subtractor circuit using nand gate full adder circuit using nor gates full subtractor circuit using nand gates full subtractor circuit nand gates 0-99 counter by using 4 dual jk flip flop	PDF
full subtractor circuit nand gates Abstract: 8 bit carry select adder verilog codes PLESSEY CLA low power and area efficient carry select adder v 32 bit barrel shifter vhdl advantages of master slave jk flip flop half adder 74 full subtractor circuit using nand gate 0-99 counter by using 4 dual jk flip flop 3 bit carry select adder verilog codes Text: AUGUST 1992 2462 - 4.0 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS Supersedes March 1992 edition - version 3.1 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC	Original	CLA70000 full subtractor circuit nand gates 8 bit carry select adder verilog codes PLESSEY CLA low power and area efficient carry select adder v 32 bit barrel shifter vhdl advantages of master slave jk flip flop half adder 74 full subtractor circuit using nand gate 0-99 counter by using 4 dual jk flip flop 3 bit carry select adder verilog codes	PDF
full adder circuit using nor gates Abstract: full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates Text: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This	Original	CLA70000 DS2462 full adder circuit using nor gates full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates	PDF
AOI21 Abstract: OAI22 32X72 equivalent to TRANSISTOR BC 187 ao21 AN1521 low noise transistor bc 179 OMPAC wirebond die flag lead frame using NAND gate construct an inverter Text: Order this Data Sheet by H4CP/D MOTOROLA SEMICONDUCTOR H4CPlus SERIES TECHNICAL DATA Product Data Sheet H4CPlus SERIES CMOS ARRAYS The new H4CPlus Series arrays feature new 3.3V, 5V and mixed-voltage capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew	Original		PDF
8 bit carry select adder verilog codes Abstract: full subtractor circuit using decoder 3 bit carry select adder verilog codes tdb 158 dp gec plessey semiconductor full subtractor circuit using nor gates full adder circuit using nor gates mc2870 VHDL program 4-bit adder 8 bit subtractor Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MARCH 1992 2462 - 3.1 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS Supersedes January 1992 edition - version 2.1 Recent advances in CMOS processing technology and improvements in design architecture have led to the	Original	CLA70000 8 bit carry select adder verilog codes full subtractor circuit using decoder 3 bit carry select adder verilog codes tdb 158 dp gec plessey semiconductor full subtractor circuit using nor gates full adder circuit using nor gates mc2870 VHDL program 4-bit adder 8 bit subtractor	PDF
low power and area efficient carry select adder v Abstract: IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom Text: MVA60000 MVA60000 Series 1.4 Micron CMOS MEGACELL ASICs DS5499 ISSUE 3.1 March 1991 GENERAL DESCRIPTION Very large scale integrated circuits, requiring large RAM and ROM blocks, often do not suit even high complexity gate arrays, such as Zarlink Semiconductors' CLA60000 series.	Original	MVA60000 MVA60000 DS5499 CLA60000 low power and area efficient carry select adder v IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom	PDF
O2-A2 Abstract: CLA60000 16-LINE TO 4-LINE PRIORITY ENCODERS DRF4T101 4 bit binary multiplier Gray to BCD converter CLA5000 J K flip-flop CLA64 design octal counter using j-k flipflop Text: CLA60000 Series Channel less CMOS Gate Arrays This new family of gate arrays uses many innovative techniques to achieve 110K gates per chip with system clock speeds of up to 70MHz. The combination of high speed, high gate complexity and low power operation places Zarlink Semiconductor	Original	CLA60000 70MHz. O2-A2 16-LINE TO 4-LINE PRIORITY ENCODERS DRF4T101 4 bit binary multiplier Gray to BCD converter CLA5000 J K flip-flop CLA64 design octal counter using j-k flipflop	PDF
CLA60000 Abstract: zarlink cla5000 CLA5000 16-LINE TO 4-LINE PRIORITY ENCODERS 4 bit binary multiplier CLA5000 Series Zarlink gate array RAD32D MVA50 Text: CLA60000 Series Channel less CMOS Gate Arrays This new family of gate arrays uses many innovative techniques to achieve 110K gates per chip with system clock speeds of up to 70MHz. The combination of high speed, high gate complexity and low power operation places Zarlink Semiconductor	Original	CLA60000 70MHz. zarlink cla5000 CLA5000 16-LINE TO 4-LINE PRIORITY ENCODERS 4 bit binary multiplier CLA5000 Series Zarlink gate array RAD32D MVA50	PDF
st microelectronics smd zener Abstract: OPA71 STKM2000 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice Text: STKM2000 SERIES  2 µ/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS • ■ ■ ■ ■ ■ ■ ■ ADVANCED BICMOS 2 µ/2 POLY/ 2 METAL PROCESS TWIN TUB PROCESS HIGH LATCH-UP IMMUNITY POWER SUPPLY : MAXIMUM RATING : -0.5V TO 12V OPERATING CONDITIONS : 3V TO 10V	Original	STKM2000 st microelectronics smd zener OPA71 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice	PDF

Untitled Abstract: No abstract text available Text: 74ACT11132 QUADRUPLE POSITIVE-NAND GATE WITH SCHMITT-TRIGGER INPUTS SCAS177 - D3974, JANUARY 1992 - REVISED APRIL 1993 Inputs Are TTL-Voltage Compatible Center-Pin V^c and GND Pin Configurations Minimize High-Speed Switching Noise EP/C Enhanced-Performance Implanted	OCR Scan	74ACT11132 SCAS177 D3974, 500-mA 300-mll foCAS177	PDF
z63n Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us ing a 0.8 micron drawn twin well silicon gate process	OCR Scan	M6008X MDS-GA-02-03-91 z63n t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W	PDF
ET3000 Abstract: ER22T m21g ET-30 R04T ET1500 ECL IC NAND IR1P Text: FUJITSU MICROELECTRONICS 31E D 374T7Í35 001MbIO 3 E B FMI February 1990 Edition 1.1 FUJITSU DATA S H E E T ET750, ET1500, ET3000, ET4500 ECL Series Gate Arrays_ D E S C R IP T IO N The Fujitsu ET series gate array family Is a group of high-speed gate arrays with	OCR Scan	374T7 001MbIO ET750, ET1500, ET3000, ET4500 ET1500 ET30Q0, ET3000 ER22T m21g ET-30 R04T ET1500 ECL IC NAND IR1P	PDF
m60013 Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043 Text: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are	OCR Scan	MDS-GA-11-90-RK m60013 M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043	PDF
DNR2 Abstract: half adder circuit using 2*1 multiplexer TTL nand gate twin ER22T RA23 ECL IC NAND Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D 374^71=2 ÜG14Li32 February 1990 Edition 1.1 DATA S H E E T 2 IF li I FUJITSU ET10000H, E10000H T - f a - u - i z Gate Arrays DESCRIPTION Th e Fujitsu H -Series E C L gate array family offers designers an outstanding combination of cell density, high I/O capability, speed,	OCR Scan	G14Li32 ET10000H, E10000H applicat000000000000 ET10000H E10000H 37MT7b2 260-PIN DNR2 half adder circuit using 2*1 multiplexer TTL nand gate twin ER22T RA23 ECL IC NAND	PDF
Untitled Abstract: No abstract text available Text: M T C -1 2 0 0 0 C M O S 1 .2 u Standard Cell Library Services CMOS Family Features • Technology: - 1.2 micron tw in -w ell CMOS process w ith polycide gates, double layer m etal, linear Ihin oxide capacitors and high ohmic resistors - Shrink capability to	OCR Scan	BHDA08A BHAD12A BHSD14A	PDF
Untitled Abstract: No abstract text available Text: PLESSIEY SEMICONDUCTORS Appendix 7 ; CLA60000 SERIES CHANNELLESS CMOS GATE ARRAYS Supersedes December 1988 Edition This advanced family o f gate arrays uses many innovative techniques to achieve 110K gates pa r ch'p - system clock speeds in excess o f 70MHz are achievable. The combinatbn	OCR Scan	CLA60000 70MHz	PDF
5Bp smd transistor data Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7 Text: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a	OCR Scan		PDF
MCR 22-8 transistor power Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049 Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.	OCR Scan		PDF
CDA 10.7 MC 40 Abstract: No abstract text available Text: fíOv ¿4 m O rder this Data Sheet by H4C D MOTOROLA H4C SERIES SEMICONDUCTOR TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H PERFORM ANCE T R IP L E LAYER M ETAL The H4C Series is Motorola’s highest performance, sub-micron family of	OCR Scan	kl45B 1PHX33006-4 CDA 10.7 MC 40	PDF

TTL NAND GATE TWIN Search Results

TTL NAND GATE TWIN Result Highlights (5)

TTL NAND GATE TWIN Datasheets Context Search

transistor nd8

CB12000

AO4L

TMS 3766

hp laptop inverter board schematic

full subtractor circuit using decoder

full subtractor circuit nand gates

full adder circuit using nor gates

AOI21

8 bit carry select adder verilog codes

low power and area efficient carry select adder v

O2-A2

CLA60000

st microelectronics smd zener

Untitled

z63n

ET3000

m60013

DNR2

Untitled

Untitled

5Bp smd transistor data

MCR 22-8 transistor power

CDA 10.7 MC 40