24-Pin Plastic DIP
Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
Text: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C188/188L
P4C188/P4C188L
P4C188L
22-Pin
24-Pin
P4C188
15DMB
20DMB
24-Pin Plastic DIP
64 CERAMIC LEADLESS CHIP CARRIER LCC
diode Lz 66
transistor smd code wz
P4C188
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P4C188
Abstract: P4C188L
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP
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P4C188/P4C188L
P4C188L
22-Pin
24-Pin
P4C188
P4C188
P4C11
SRAM112
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Untitled
Abstract: No abstract text available
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP
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P4C188/P4C188L
P4C188L
22-Pin
24-Pin
P4C188
SRAM112
P4C188/188L
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Untitled
Abstract: No abstract text available
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP
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P4C188/P4C188L
P4C188
P4C188L
22-Pin
24-Pin
P4C188
536-bit
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ay-5-1012
Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS
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38510/MACH
Mll-M-38510
Z501300
Z501200
Z501201
Z012510
ZOl1510
ay-5-1012
ali m 3329
PROCESSOR ALI 3329
ali 3329 b
ali 3329
SN74188
sn74s188
str 52100
SN7452
replacement of bel 187 transistor
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Untitled
Abstract: No abstract text available
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology
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P4C188/P4C188L
P4C188L
22-Pln
24-Pin
22-Pin
P4C188
P4C188L
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P4C188
Abstract: P4C188L
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)
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P4C188/P4C188L
P4C188
P4C188L
22-Pin
24-Pin
22-Ptn
P4C188
P4C188L
53625CC
-35PC
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Untitled
Abstract: No abstract text available
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)
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P4C188/P4C188L
22-Pin
24-Pin
22-Pln
P4C188
P4C188L
P4C188
-20CM
-20LM
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Untitled
Abstract: No abstract text available
Text: FU JITSU MICROELECTRONICS HIGH SPEED SCHOTTKY TTL 8192-BIT PROM MB7130E MB7130H DESCRIPTION The Fujitsu MB7130 is a high speed Schottky TTL electrically field programmable read only memory organized as 1024 words by 8-bits. With three-state outputs on the MB7130, memory expan
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8192-BIT
MB7130
MB7130,
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DM77
Abstract: DM87SR27N DM87SR27BJ DM87SR27BN J22A N22A
Text: DM77SR27/DM87SR27 VWA National éH à Sem iconductor DM77/87SR27 512x8 4k-Bit Registered TTL PROM General Description The DM77/87SR27 is an electrically programmable Schottky TTL read-only memory with D-type, master-slave registers on-chip. This device is organized as 512 words by
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DM77/87SR27
DM77/87SR27
DM77
DM87SR27N
DM87SR27BJ
DM87SR27BN
J22A
N22A
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am9101
Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads
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Am9101
Am9101/Am91L01
1024-bit,
MIL-STD-883,
91l01
am91l01
9101C
Am9101/91L01/2101
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pc2101
Abstract: 91L01
Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads
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Am9101
Am9101/Am91L01
1024-bit,
WF000200
MIL-STD-883,
pc2101
91L01
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saa6000
Abstract: 65536 page mode dynamic ITT4164 ITT5101S
Text: MOS MEMORIES ITT4164 65536-Bit Dynamic Random Access Memory Industry-Standard 16-Pin DIP Features 150 ns access time (ITT4164-15) 200 ns access time (ITT4164-20) All inputs including clocks are TTL compatible Standard power supply + 5 V, ±10% Three state TTL compatible output, Data out is not latched
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ITT4164
65536-Bit
16-Pin
ITT4164-15)
ITT4164-20)
SAA6000
ITT5101S
saa6000
65536 page mode dynamic
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pnp 8 transistor array ttl
Abstract: MB7130E MB7130H dis40
Text: MB7130E MB7130H FUJITSU M IC R O E L E C T R O N IC S HIGH SPEED SCHOTTKY TTL 8192-BIT PROM DESCRIPTION The Fujitsu M B7130 is a high speed Schottky TTL electrically field programmable read only memory organized as 1024 words by 8-bits. W ith three-state outputs
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8192-bit
mb7130e
mb7130h
MB7130
MB7130,
MB7130E:
MB7130H:
pnp 8 transistor array ttl
MB7130H
dis40
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MB767
Abstract: B767
Text: 2 1993 November 1989 Editton 1.0 FUJITSU — PRODUCT PROFILE MB767 Octal TTL to ECL Level Translator with Strobe DESCRIPTION The Fujitsu M B767 is a high-speed TTL-to-ECL level translator with eight circuits. The M B767 E C L input interface is compatible with 10KH ECL. The M B767 is housed in a
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MB767
20-pin
22-pin
24-pin
MB767
B767
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AM93l422
Abstract: TW000040 st gex 21 diode
Text: Am93L412/93L422 256 x 4-Bit Low-Power TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write
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Am93L412/93L422
Am93L412/L422
1024-bit
256-word
MIL-STD-883,
AM93l422
TW000040
st gex 21 diode
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Bubble Memory
Abstract: TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230 S6590
Text: 7230 CURRENT PULSE GENERATOR FOR BUBBLE MEMORIES TTL Compatible Inputs Provides all Pulses for IM’s Bubble Memories — Replicate, Swap, Generate, Boot Replicate and Bootswap Current Sink Outputs Designed to Directly Drive Bubble Memory • Direct Interface to Bubble Memory
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22-Pin
71meter
S6590
S6590
AFN-01357A
Bubble Memory
TA 7230 P
intel 8085
Intel BUBBLE
7230
intel 7110
intel 8088 memory
memory bubble
INTEL 7230
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8X350
Abstract: 8X300
Text: Philips Components-SigneHcs Document No. 853-0147 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 8X350 2048-bit TTL bipolar RAM Memory Products DESCRIPTION The 8X350 bipolar RAM is designed principally as a working storage element
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8X350
2048-bit
8X350
8X305
8X305,
8X300
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8x305
Abstract: BIPOLAR MEMORY
Text: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry
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8X350-40
8X350-40
8X305
8X305,
8X350
8X37X
BIPOLAR MEMORY
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AMD 2903
Abstract: am2903 IR 2411 AM27S20 am27s27dc AM27S26DC AM27S26DM AM27S27XC generic prom programming st 2903
Text: Am27S26 • Am27S27 4096-B it G eneric Series Bipolar PROM DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • The Am 27S26 and Am27S27 are electrically programmable Schottky TTL read only memories incorporating true D-type, master-slave data registers on chip. These devices feature the
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Am27S26
Am27S27
4096-Bit
Am2903
Am2900
Am27S26/27
22-Pin
AM27S26DC
AM27S26DM
AM27S27DC
AMD 2903
IR 2411
AM27S20
am27s27dc
AM27S26DC
AM27S26DM
AM27S27XC
generic prom programming
st 2903
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AM93422
Abstract: 93422 ram AM93422ADMC Am93412A PD022
Text: A m 93412/93422 Am93412/93422 256 X 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write
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Am93412/93422
Am93412/22
1024-bit
256-word
MIL-STD-883,
AM93422
93422 ram
AM93422ADMC
Am93412A
PD022
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93422 amd
Abstract: AM93422 AM93422ADMC 93422 ram
Text: Am93412/93422 Am93412/93422 256 x 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • • High-speed Internal ECL circuitry for optimum speed/power perfor mance over voltage and temperature Output preconditioned during write to eliminate write
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Am93412/93422
Am93412/22
1024-bit
256-word
MIL-STD-883,
93422 amd
AM93422
AM93422ADMC
93422 ram
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23E D
Abstract: km6465
Text: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating
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KM6465P/KM6465LP
22-pin
300mil)
KM6465P/LP
536-bit
23E D
km6465
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4801h
Abstract: UCS4801 UCS-480IH UCS4401H UCS-4401 UCS-4801H ucs-4801 UCS4801H UCS-4401H MIL-STD-8
Text: UCS-4401H a nd UCS-4801H HERMETIC BiMOS LATCHED DRIVERS UCS-4401H a n d UCS-4801H HERMETIC BiMOS LATCHED DRIVERS MIL-STD-883 Compliant FEATURES High-Voltage, High-Current Outputs Output Transient Protection CMOS, PMOS, NMOS, TTL Compatible Internal Pull-Down Resistors
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UCS-4401H
UCS-4801H
MIL-STD-883
UCS-4401
UCS-480IH
4801h
UCS4801
UCS4401H
ucs-4801
UCS4801H
MIL-STD-8
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