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    TTL 22PIN Search Results

    TTL 22PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SNJ5480J Rochester Electronics LLC Adder/Subtractor, TTL, CDIP14, Visit Rochester Electronics LLC Buy
    5480FM Rochester Electronics LLC 5480 - Multiplier, TTL, CDFP14 Visit Rochester Electronics LLC Buy
    9317CDC Rochester Electronics LLC 9317 - Decoder/Driver, TTL, CDIP16 Visit Rochester Electronics LLC Buy
    54H62FM Rochester Electronics LLC 54H62 - Gate, TTL, CDFP14 Visit Rochester Electronics LLC Buy
    5496J/B Rochester Electronics LLC 5496 - Shift Register, 5-Bit, TTL Visit Rochester Electronics LLC Buy

    TTL 22PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24-Pin Plastic DIP

    Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
    Text: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)


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    PDF P4C188/188L P4C188/P4C188L P4C188L 22-Pin 24-Pin P4C188 15DMB 20DMB 24-Pin Plastic DIP 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188

    P4C188

    Abstract: P4C188L
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP


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    PDF P4C188/P4C188L P4C188L 22-Pin 24-Pin P4C188 P4C188 P4C11 SRAM112

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP


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    PDF P4C188/P4C188L P4C188L 22-Pin 24-Pin P4C188 SRAM112 P4C188/188L

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP


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    PDF P4C188/P4C188L P4C188 P4C188L 22-Pin 24-Pin P4C188 536-bit

    ay-5-1012

    Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
    Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS


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    PDF 38510/MACH Mll-M-38510 Z501300 Z501200 Z501201 Z012510 ZOl1510 ay-5-1012 ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology


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    PDF P4C188/P4C188L P4C188L 22-Pln 24-Pin 22-Pin P4C188 P4C188L

    P4C188

    Abstract: P4C188L
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


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    PDF P4C188/P4C188L P4C188 P4C188L 22-Pin 24-Pin 22-Ptn P4C188 P4C188L 53625CC -35PC

    Untitled

    Abstract: No abstract text available
    Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)


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    PDF P4C188/P4C188L 22-Pin 24-Pin 22-Pln P4C188 P4C188L P4C188 -20CM -20LM

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU MICROELECTRONICS HIGH SPEED SCHOTTKY TTL 8192-BIT PROM MB7130E MB7130H DESCRIPTION The Fujitsu MB7130 is a high speed Schottky TTL electrically field programmable read only memory organized as 1024 words by 8-bits. With three-state outputs on the MB7130, memory expan­


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    PDF 8192-BIT MB7130 MB7130,

    DM77

    Abstract: DM87SR27N DM87SR27BJ DM87SR27BN J22A N22A
    Text: DM77SR27/DM87SR27 VWA National éH à Sem iconductor DM77/87SR27 512x8 4k-Bit Registered TTL PROM General Description The DM77/87SR27 is an electrically programmable Schottky TTL read-only memory with D-type, master-slave registers on-chip. This device is organized as 512 words by


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    PDF DM77/87SR27 DM77/87SR27 DM77 DM87SR27N DM87SR27BJ DM87SR27BN J22A N22A

    am9101

    Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
    Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads


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    PDF Am9101 Am9101/Am91L01 1024-bit, MIL-STD-883, 91l01 am91l01 9101C Am9101/91L01/2101

    pc2101

    Abstract: 91L01
    Text: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads


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    PDF Am9101 Am9101/Am91L01 1024-bit, WF000200 MIL-STD-883, pc2101 91L01

    saa6000

    Abstract: 65536 page mode dynamic ITT4164 ITT5101S
    Text: MOS MEMORIES ITT4164 65536-Bit Dynamic Random Access Memory Industry-Standard 16-Pin DIP Features 150 ns access time (ITT4164-15) 200 ns access time (ITT4164-20) All inputs including clocks are TTL compatible Standard power supply + 5 V, ±10% Three state TTL compatible output, Data out is not latched


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    PDF ITT4164 65536-Bit 16-Pin ITT4164-15) ITT4164-20) SAA6000 ITT5101S saa6000 65536 page mode dynamic

    pnp 8 transistor array ttl

    Abstract: MB7130E MB7130H dis40
    Text: MB7130E MB7130H FUJITSU M IC R O E L E C T R O N IC S HIGH SPEED SCHOTTKY TTL 8192-BIT PROM DESCRIPTION The Fujitsu M B7130 is a high speed Schottky TTL electrically field programmable read only memory organized as 1024 words by 8-bits. W ith three-state outputs


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    PDF 8192-bit mb7130e mb7130h MB7130 MB7130, MB7130E: MB7130H: pnp 8 transistor array ttl MB7130H dis40

    MB767

    Abstract: B767
    Text: 2 1993 November 1989 Editton 1.0 FUJITSU — PRODUCT PROFILE MB767 Octal TTL to ECL Level Translator with Strobe DESCRIPTION The Fujitsu M B767 is a high-speed TTL-to-ECL level translator with eight circuits. The M B767 E C L input interface is compatible with 10KH ECL. The M B767 is housed in a


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    PDF MB767 20-pin 22-pin 24-pin MB767 B767

    AM93l422

    Abstract: TW000040 st gex 21 diode
    Text: Am93L412/93L422 256 x 4-Bit Low-Power TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate write


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    PDF Am93L412/93L422 Am93L412/L422 1024-bit 256-word MIL-STD-883, AM93l422 TW000040 st gex 21 diode

    Bubble Memory

    Abstract: TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230 S6590
    Text: 7230 CURRENT PULSE GENERATOR FOR BUBBLE MEMORIES TTL Compatible Inputs Provides all Pulses for IM’s Bubble Memories — Replicate, Swap, Generate, Boot Replicate and Bootswap Current Sink Outputs Designed to Directly Drive Bubble Memory • Direct Interface to Bubble Memory


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    PDF 22-Pin 71meter S6590 S6590 AFN-01357A Bubble Memory TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230

    8X350

    Abstract: 8X300
    Text: Philips Components-SigneHcs Document No. 853-0147 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 8X350 2048-bit TTL bipolar RAM Memory Products DESCRIPTION The 8X350 bipolar RAM is designed principally as a working storage element


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    PDF 8X350 2048-bit 8X350 8X305 8X305, 8X300

    8x305

    Abstract: BIPOLAR MEMORY
    Text: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry


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    PDF 8X350-40 8X350-40 8X305 8X305, 8X350 8X37X BIPOLAR MEMORY

    AMD 2903

    Abstract: am2903 IR 2411 AM27S20 am27s27dc AM27S26DC AM27S26DM AM27S27XC generic prom programming st 2903
    Text: Am27S26Am27S27 4096-B it G eneric Series Bipolar PROM DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • The Am 27S26 and Am27S27 are electrically programmable Schottky TTL read only memories incorporating true D-type, master-slave data registers on chip. These devices feature the


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    PDF Am27S26 Am27S27 4096-Bit Am2903 Am2900 Am27S26/27 22-Pin AM27S26DC AM27S26DM AM27S27DC AMD 2903 IR 2411 AM27S20 am27s27dc AM27S26DC AM27S26DM AM27S27XC generic prom programming st 2903

    AM93422

    Abstract: 93422 ram AM93422ADMC Am93412A PD022
    Text: A m 93412/93422 Am93412/93422 256 X 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • High-speed Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate write


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    PDF Am93412/93422 Am93412/22 1024-bit 256-word MIL-STD-883, AM93422 93422 ram AM93422ADMC Am93412A PD022

    93422 amd

    Abstract: AM93422 AM93422ADMC 93422 ram
    Text: Am93412/93422 Am93412/93422 256 x 4-Bit TTL Bipolar IMOX RAM DISTINCTIVE CHARACTERISTICS • • • • High-speed Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature Output preconditioned during write to eliminate write


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    PDF Am93412/93422 Am93412/22 1024-bit 256-word MIL-STD-883, 93422 amd AM93422 AM93422ADMC 93422 ram

    23E D

    Abstract: km6465
    Text: SAMSUNG SEMICONDUCTOR INC 23E D 7^4145 DGOaab4 ñ • KM6465P/KM6465LP CMOS SRAM 16K x 4 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 2 mA (max.) (CMOS): 100 (iA (max.) Operating


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    PDF KM6465P/KM6465LP 22-pin 300mil) KM6465P/LP 536-bit 23E D km6465

    4801h

    Abstract: UCS4801 UCS-480IH UCS4401H UCS-4401 UCS-4801H ucs-4801 UCS4801H UCS-4401H MIL-STD-8
    Text: UCS-4401H a nd UCS-4801H HERMETIC BiMOS LATCHED DRIVERS UCS-4401H a n d UCS-4801H HERMETIC BiMOS LATCHED DRIVERS MIL-STD-883 Compliant FEATURES High-Voltage, High-Current Outputs Output Transient Protection CMOS, PMOS, NMOS, TTL Compatible Internal Pull-Down Resistors


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    PDF UCS-4401H UCS-4801H MIL-STD-883 UCS-4401 UCS-480IH 4801h UCS4801 UCS4401H ucs-4801 UCS4801H MIL-STD-8