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3M Interconnect M3TTK-1018J IDC CABLE - MSD10K/MC10G/MSD10K
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M3TTK-1018J	Bulk	440		1	1 $11.35 10 $8.711 100 $6.7843 1000 $5.39279 10000 $5.39279	Buy Now
3M Interconnect M3TTK-1018R IDC CABLE - MSD10K/MC10M/MSD10K
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M3TTK-1018R	Bulk			1	1 $11.8 10 $9.062 100 $7.0599 1000 $5.61412 10000 $5.61412	Buy Now
Toshiba America Electronic Components TTK101MFV-A,L37F(B Trans JFET N-CH -1V 3-Pin SOT-723 - Tape and Reel (Alt: TTK101MFV-A,L37F(B)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TTK101MFV-A,L37F(B	Reel		12 Weeks	8,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
pro-power STTK10-10 Uninsulated Crimp Terminals 10Mm, Pk10 Rohs Compliant: Yes \|Pro Power STTK10-10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	STTK10-10	Pack	39		1	1 $4.53 10 $4.53 100 $3.78 1000 $3.1 10000 $3.1	Buy Now

TTK101 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm 0.22±0.05 Rating Unit VGDO -20 V IG 10 mA PD Note 1 150 mW Tj 125 °C Tstg −55 to 125 °C Gate-drain voltage Gate current Drain power dissipation Junction temperature	Original	TTK101MFV	PDF
TTK101MFV Abstract: TTK101 Text: TTK101MFV 東芝ジャンクションＦＥＴシリコンＮチャネル接合形 TTK101MFV エレクトレットコンデンサマイクロフォン用単位: mm 0.22±0.05 ・入力容量が小さい: Ciss = 1.8 pF typ. @VDS = 2 V, VGS = 0, f = 1MHz	Original	TTK101MFV A100mV 250uA TTK101MFV TTK101	PDF
TTK101MFV Abstract: ttk101 Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm 0.22±0.05 VGDO -20 V IG 10 mA PD Note 1 150 mW Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Note:	Original	TTK101MFV TTK101MFV ttk101	PDF
TTK101 Abstract: TTK101TK Text: TTK101TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101TK For ECM Unit: mm Application for compact ECM 0.22±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation PD 100 mW Junction Temperature Tj 125 °C Tstg −55 to 125 °C	Original	TTK101TK TTK101 TTK101TK	PDF
Untitled Abstract: No abstract text available Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation PD Note 1 150 mW Junction temperature Storage temperature range Note: Tj 125 °C Tstg	Original	TTK101MFV	PDF
TTK101MFV Abstract: No abstract text available Text: TTK101MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation PD Note 1 150 mW Junction temperature Storage temperature range Note: Tj 125 °C Tstg	Original	TTK101MFV TTK101MFV	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
TPCA8030 Abstract: lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 Text: 製品カタログ 2009-9 東芝半導体製品カタログ汎用小信号面実装対応素子（トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S	Original	TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA8030 lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322	PDF