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    Cornell Dubilier Electronics Inc 108TTA063M

    CAP ALUM 1000UF 20% 63V AXIAL TH
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    DigiKey 108TTA063M Bulk 13,002 1
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    TTI 108TTA063M Bulk 42,650 50
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    Cornell Dubilier Electronics Inc 106TTA050MSD

    CAP ALUM 10UF 20% 50V AXIAL TH
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    DigiKey 106TTA050MSD Cut Tape 7,803 1
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    106TTA050MSD Reel 7,500 1,500
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    Newark 106TTA050MSD Cut Tape 6,420 1
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    Chip1Stop 106TTA050MSD 2,910
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    IBS Electronics 106TTA050MSD 2,910 3,087
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    Cornell Dubilier Electronics Inc 228TTA035M

    CAP ALUM 2200UF 20% 35V AXIAL TH
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    DigiKey 228TTA035M Bulk 6,080 1
    • 1 $5.56
    • 10 $3.768
    • 100 $2.8175
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    TTI 228TTA035M Bulk 350 50
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    Chip1Stop 228TTA035M 851
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    Cornell Dubilier Electronics Inc 106TTA063M

    CAP ALUM 10UF 20% 63V AXIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 106TTA063M Bulk 5,079 1
    • 1 $1.09
    • 10 $0.675
    • 100 $0.4568
    • 1000 $0.3406
    • 10000 $0.29336
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    Cornell Dubilier Electronics Inc 477TTA025M

    CAP ALUM 470UF 20% 25V AXIAL TH
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    DigiKey 477TTA025M Bulk 5,072 1
    • 1 $1.91
    • 10 $1.223
    • 100 $1.91
    • 1000 $0.66185
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    TTA0 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TTA0001 Toshiba TTA0001 - TRANSISTOR 18 A, 160 V, PNP, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-16C1A, 3 PIN, BIP General Purpose Power Original PDF
    TTA0001(Q,T) Toshiba TTA0001 - Trans GP BJT PNP 160V 18A 3-Pin(3+Tab) TO-3P(N) Original PDF
    TTA0002 Toshiba TTA0002 - TRANSISTOR 18 A, 160 V, PNP, Si, POWER TRANSISTOR, ROHS COMPLIANT, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF
    TTA0002(Q) Toshiba TTA0002 - Trans GP BJT PNP 160V 18A 3-Pin(3+Tab) TO-3PL Original PDF
    TTA003 Toshiba Japanese - Transistors Original PDF
    TTA003 Toshiba Transistors Original PDF
    TTA003 Toshiba TTA003 - TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power Original PDF
    TTA003,L1NQ(O Toshiba TTA003 - Trans GP BJT PNP 80V 3A 3-Pin(2+Tab) New PW-Mold Original PDF
    TTA004B,Q Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 160V 1.5A TO126N Original PDF
    TTA005 Toshiba Japanese - Transistors Original PDF
    TTA005 Toshiba Transistors Original PDF
    TTA006B,Q(S Toshiba America Electronic Components TRANSISTOR PNP BIPO TO126N Original PDF
    TTA007 Toshiba Japanese - Transistors Original PDF
    TTA007 Toshiba Transistors Original PDF
    TTA007 Toshiba TTA007 - TRANSISTOR 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3S1C, 3 PIN, BIP General Purpose Small Signal Original PDF

    TTA0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TTC0002

    Abstract: TTA0002 2-21F1A
    Text: TTC0002 東芝トランジスタ シリコンNPN三重拡散形 TTC0002 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 160 V 最小 • TTA0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF TTC0002 TTA0002 2-21F1A TTC0002 TTA0002 2-21F1A

    TTC0001

    Abstract: TTA0001 a1815 100-W power amplifier handbook
    Text: TTC0001 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0001 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTC0001 TTA0001 TTC0001 TTA0001 a1815 100-W power amplifier handbook

    Untitled

    Abstract: No abstract text available
    Text: TTA005 バイポーラトランジスタ シリコンPNPエピタキシャル形 TTA005 1. 用途 • 高速スイッチング用 • DC-DCコンバータ用 2. 特長 1 直流電流増幅率が高い: hFE = 200500 (IC = -0.5 A) (2) コレクタエミッタ間飽和電圧が低い: VCE(sat) = -0.27 V (最大) (IC = -1.6 A , IB = -53 mA)


    Original     		PDF TTA005

    Untitled

    Abstract: No abstract text available
    Text: TTA0001 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min. • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0001 TTC0001

    TTA007

    Abstract: 23S1C
    Text: TTA007 東芝トランジスタ シリコンPNPエピタキシャル形 TTA007 単位: mm 高速スイッチング用 DC-DC コンバータ用 • 直流電流増幅率が高い。 : hFE = 200~500 IC = −0.1 A • コレクタ・エミッタ間飽和電圧が低い。


    Original     		PDF TTA007 645mm 645mm2) 645mm2 645mm2 TTA007 23S1C

    Untitled

    Abstract: No abstract text available
    Text: TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications • High DC current gain : hFE = 200 to 500 IC = −0.1 A • Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max)


    Original     		PDF TTA007

    TTC0002

    Abstract: TTA0002 100-W 2-21F1A
    Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTC0002 TTA0002 TTC0002 TTA0002 100-W 2-21F1A

    TTC0001

    Abstract: TTA0001
    Text: TTA0001 東芝トランジスタ シリコンPNP三重拡散形 TTA0001 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = －160 V 最小 • TTC0001 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF TTA0001 TTC0001 2-16C1A TTC0001 TTA0001

    TTA0001

    Abstract: 100W AUDIO ic AMPLIFIER 100-W TTC0001
    Text: TTA0001 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min. • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0001 TTC0001 TTA0001 100W AUDIO ic AMPLIFIER 100-W TTC0001

    TTA005

    Abstract: No abstract text available
    Text: TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features 1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA)


    Original     		PDF TTA005 TTA005

    TTA0002

    Abstract: TTC0002 100-W 2-21F1A
    Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0002 TTC0002 TTA0002 TTC0002 100-W 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: TTA003 バイポーラトランジスタ シリコンPNPエピタキシャル形 TTA003 1. 用途 • 電力増幅用 • 電力スイッチング用 2. 特長 1 コレクタ飽和電圧が低い: VCE(sat) = -0.5 V (最大) (IC = -1 A, IB = -100 mA) (2)


    Original     		PDF TTA003

    TTC004

    Abstract: C004 TTA004 23LM-C004 6v
    Text: TTC004 東芝トランジスタ シリコンNPNエピタキシャル形 TTC004 ○ オーディオアンプ励振段増幅用 • 単位: mm : VCEO = 160 V 最小 高耐圧です。 • TTA004 とコンプリメンタリになります。 • オーディオアンプの励振段に適します。


    Original     		PDF TTC004 TTA004 100ms TTC004 C004 TTA004 23LM-C004 6v

    TTC0001

    Abstract: TTA0001
    Text: TTC0001 東芝トランジスタ シリコンNPN三重拡散形 TTC0001 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = 160 V 最小 • TTA0001 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF TTC0001 TTA0001 2-16C1A TTC0001 TTA0001

    TTA004

    Abstract: marking a004 A004 transistor TTC004 A004
    Text: TTA004 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA004 ○ Audio Frequency Amplifier Applications Unit: mm • High collector voltage • Complementary to TTC004 • Small collector output capacitance : Cob = 17pF • High transition frequency : fT = 100MHz typ.


    Original     		PDF TTA004 TTC004 100MHz TTA004 marking a004 A004 transistor TTC004 A004

    TTC004

    Abstract: TTA004 C004
    Text: TTC004 TOSHIBA Transistor Silicon NPN Epitaxial Type TTC004 ○ Audio Frequency Amplifier Applications Unit: mm • High collector voltage • Complementary to TTA004 • Small collector output capacitance : Cob = 12 pF typ. • High transition frequency


    Original     		PDF TTC004 TTA004 TTC004 TTA004 C004

    TTA004

    Abstract: TTC004 A004
    Text: TTA004 東芝トランジスタ シリコンPNPエピタキシャル形 TTA004 ○ オーディオアンプ励振段増幅用 単位: mm • 高耐圧です。 • TTC004 とコンプリメンタリになります。 • オーディオアンプの励振段に適します。


    Original     		PDF TTA004 TTC004 100MHz 100ms TTA004 TTC004 A004

    TTA007

    Abstract: No abstract text available
    Text: TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mm High-Speed Switching Applications DC-DC Converter Applications • High DC current gain : hFE = 200 to 500 IC = −0.1 A • Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max)


    Original     		PDF TTA007 TTA007

    Untitled

    Abstract: No abstract text available
    Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0002 TTC0002

    Untitled

    Abstract: No abstract text available
    Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTC0002 TTA0002

    tta004b

    Abstract: No abstract text available
    Text: TTA004B Bipolar Transistors Silicon PNP Epitaxial Type TTA004B 1. Applications • Audio-Frequency Amplifiers 2. Features 1 High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ.)


    Original     		PDF TTA004B TTC004B O-126N tta004b

    TTC0002

    Abstract: 2-21F1A TTA0002
    Text: TTA0002 東芝トランジスタ シリコンPNP三重拡散形 TTA0002 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = －160 V 最小 • TTC0002 とコンプリメンタリになります。 • 100 W ハイファイオーディオアンプ出力段に最適です。


    Original     		PDF TTA0002 TTC0002 2-21F1A TTC0002 2-21F1A TTA0002

    Untitled

    Abstract: No abstract text available
    Text: TTA005 Bipolar Transistors Silicon PNP Epitaxial Type TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features 1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA)


    Original     		PDF TTA005

    TC5022BP

    Abstract: 5022B
    Text: -221 5022B B C D to 7 Segment D ecader/LED Driver 7 0 y? • v DD IH * - fî.T 3 - r • B I A ílS r “ H” C - tê tâ ifK T . R B I Î - "H ” ÛÀ^J ¿0 C £ Í ~ 3 t í ñ f í c % . Ä V - K •3 ^ 0 7 * ? ^ y h L E D ÿ f f i t n M ' ^tta0R&í>5 0 0 2 *íí>£


    OCR Scan     		PDF 5022B TC50Z2BP TC5022BP