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Text: s tim m m an A M P com pany Radar Pulsed Power Transistor, 100W, 3jis Pulse, 30% Duty 1 .1 -1.3 GHz PH1113-100 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry
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PH1113-100
TT5QM50A
ATC100A
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Untitled
Abstract: No abstract text available
Text: b3E D Sb42E05 0000043 ¡=,33 HAP MICROWAVE PULSED POWER TRANSISTOR PH1214-6.OM PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System
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Sb42E05
PH1214-6
100pS
MA2026A
ATC100AConfiguration
ATC100A
TT5QM50A,
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