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Abstract: No abstract text available
Text: b3E D Sb42E05 0000043 ¡=,33 HAP MICROWAVE PULSED POWER TRANSISTOR PH1214-6.OM PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System
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Sb42E05
PH1214-6
100pS
MA2026A
ATC100AConfiguration
ATC100A
TT5QM50A,
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T4 0450
Abstract: transistor j8
Text: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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PH0404-30EL
Sb42E05
Sb422DS
D001177
T4 0450
transistor j8
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MA4P506-1072
Abstract: MA4P504-30 MA4P504-1072 MA4P506-258
Text: m an A M P company Packaged PIN Diodes MA4P100 thru 600 Series Features • • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs Wide Variety of Hermetic Packages High Reliability for Space/Military Applications
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MA4P100
MA4P202,
MA4P203,
MA4P303,
MA4P404
MA4P102)
MA4P504,
MA4P505,
MA4P506)
MA4P604,
MA4P506-1072
MA4P504-30
MA4P504-1072
MA4P506-258
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