32-PIN
Abstract: FPM DRAM
Text: OBSOLETE 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/dramds.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,
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096-cycle
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FPM DRAM
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32-PIN
Abstract: No abstract text available
Text: 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,
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096-cycle
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32-PIN
Abstract: No abstract text available
Text: 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/datasheets/dramds.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,
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Untitled
Abstract: No abstract text available
Text: 8 MEG x 8 FPM DRAM MT4LC8M8E1, MT4LC8M8B6 DRAM For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions,
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32-PIN
Abstract: No abstract text available
Text: PRELIMINARY 8 MEG x 8 FPM DRAM TECHNOLOGY, INC. MT4LC8M8E1 MT4LC8M8B6 DRAM FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row, 10 column addresses (E1) or 12 row, 11 column addresses (B6)
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Untitled
Abstract: No abstract text available
Text: W9864G6GB 1M x 4 BANKS × 16 BITS SDRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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Untitled
Abstract: No abstract text available
Text: ADVANCE M in S Q M I MT4LC8M8EÎ/B& S MEG X 8 DRAM 8 MEG X 8 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)
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096-cycle
MT4lCaMtE1/86
DD11213
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S42026
Abstract: S42026-A15-A1 S42026-A16-A3 TAB1042 cmos 4 bit counter MJ1471 PA 4013 G711 MJ1480 SL1480
Text: MJ1480/SL1480 Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have 'pre-production' status. Details given may, therefore, change without notice although we would expect this performance data to
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MJ1480/SL1480
MJ1480
SL1480
MJ1440
MJ1471.
SL1480
MJ1480)
S42026
S42026-A15-A1
S42026-A16-A3
TAB1042
cmos 4 bit counter
MJ1471
PA 4013
G711
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M5L8224
Abstract: intel 8224 lt 8224 M5L8224P
Text: MITSUBISHI LSIs M5L8224P CLOCK GENERATOR AND DRIVER FOR M 5L 8O8OA P, S CPU DESCRIPTION PIN CONFIGURATION TOP VIEW The M 5L8224P is a clo ck generator/driver fo r M 5 L 8 0 8 0 A P,S CPUs. I t is controlled by a crystal, selected by the user, to meet a variety o f system speed requirements. It is fa b ri
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M5L8224P
5L8224P
GND17
M5L8224
intel 8224
lt 8224
M5L8224P
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74LS245 buffer ic
Abstract: KS0164 mpu 401 roland d5 multi timbral
Text: KS0165 MULTIMEDIA AUDIO O V E R V IE W The KS0165wavetable synthesizer with ettect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The
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KS0165
KS0165wavetable
KS0165
32-voice
16-bit
MPU-401
16-bit,
74LS245 buffer ic
KS0164
mpu 401
roland d5 multi timbral
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Untitled
Abstract: No abstract text available
Text: m H A F R F R IS ACTS74MS S E M I C O N D U C T O R Radiation Hardened Dual D Flip Flop with Set and Reset D e c e m b e r 1992 Features Pinouts • 1.25 Micron Radiation Hardened SOS CMOS 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
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ACTS74MS
MIL-STD-1835
CDIP2-T14,
05A/cm
110nm
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TC5116100BSJ60
Abstract: TC5116100BSJ70 TC5116100
Text: TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM Description The TC51161OOBSJ is the new generation dynamic RAM organized 16,777,216 word by 1 bit. The TC51161OOBSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5116100BSJ-60/70
TC51161OOBSJ
TC51161
300mil)
TC5116100BSJ60
TC5116100BSJ70
TC5116100
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Untitled
Abstract: No abstract text available
Text: KS0165 MULTIMEDIA AUDIO OVERVIEW The KS0165 wave table synthesizer with effect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The
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KS0165
KS0165
32-voice
16-bit
MPU-401
16-bit,
MPU-401
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Untitled
Abstract: No abstract text available
Text: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung K M M 372V 400A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372V400A - 6
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KMM372V400AK/AS
KMM372V400AK/AS
4Mx72
KMM372V400A
110ns
130ns
48pin
KM44V4000AK,
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34822-0013
Abstract: USCAR N018 ford
Text: NOTES: UNLESS OTHERWISE SPECIFIED A. RESIN; SEE COMPONENT DRAWINGS B. COLOR: SEE TABLE 2. DESIGN - GENERAL: A. THIS IS A100% CAD GENERATED PART. THE CADMATHEMATICAL DATA IS THE MASTER FOR THIS PART. FORDIMENSIONAL OR ANYINFORMATION NOT SHOWN ON THIS DRAWING. ANALYZE THE CAD MODEL.
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MX123
34822-0013
USCAR
N018
ford
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Untitled
Abstract: No abstract text available
Text: C ir v a v u iijy /v on» A o SP1148 a ^" C o rp o 'o tio n * CorpO'Qtion SIGNAL PROCESSING EXCELLENCE 16-Bit D/A Converter pP Controlled Gain & Offset FEATURES • 16-Bit Linearity ■ Low Power ■ Softw are P ro g ra m m a b le G a in a n d Offset ■ O n C h ip Latches, R eference & O utput
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SP1148
16-Bit
SP1148
16-bit.
18-bit
12-BIT
SPI148
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PD78C10A
Abstract: 78C11 PD78c10AGQ PD78C11A PA78CP14GQ PA-78CP14GQ 78c10 R2M 45 ZC2C 87AD
Text: 8 t* 7 !• ‘ ì / ' s ' f — ? A / D 3 4 - ? /4 ' O //PD78CllA(A iil6tf>y hALU , ROM, RAM , A / D ^ V ^ - ^ , 'J 7 ^ " f £ 1 ^-y-70^ S I I L , è ) 2 hÌ W i h •# ? >J (ROM /RAM ) ^tÈSS’C è -&CMOS 8 t*7 b • - W ^ n 3 >•b°^- —^ T '’t 'o//PD78C10A(A) ¡¿/¿PD78C11A(A) ^ i>ROM$‘|^t’>t f pHn t',
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uPD78C11A
-y-70
o//PD78C10A
PD78C11A
//PD78C12A
PD78C10A
78C11A
nn//PD78CP14
78C11
PD78c10AGQ
PA78CP14GQ
PA-78CP14GQ
78c10
R2M 45
ZC2C
87AD
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Mil-Std-883s
Abstract: ACTS630MS
Text: ACTS630MS HARRIS S E M I C O N D U C T O R Radiation Hardened EDAC Error Detection and Correction December 1992 Pinouts Features • 1.25 Micron Radiation Hardened SOS CMOS 28 PIN CERAMIC DUAL-IN-UNE MIL-STD-1835 DESIGNATOR CDIP-T28, LEAD FINISH C TOP VIEW
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ACTS630MS
MIL-STD-1835
CDIP-T28,
Mil-Std-883S,
Mil-Std-883s
ACTS630MS
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Untitled
Abstract: No abstract text available
Text: HS-26CT32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26CT32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si
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HS-26CT32RH
HS1-26CT32RH
MIL-STD-1835:
CDIP2-T16
RS-422
138mW
HS-26CT32RHm
038mm)
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Untitled
Abstract: No abstract text available
Text: HS-26C32RH Semiconductor Radiation H ardened Q u ad Differential Line R e c e iv e r August 1995 Pinouts Features • 1.2 Micron Radiation Hardened CMOS HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP MIL-STD-1835: CDIP2-T16 TOP VIEW - Total Dose Up to 300K RAD Si
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HS-26C32RH
HS1-26C32RH
MIL-STD-1835:
CDIP2-T16
RS-422
138mW
038mm)
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P1 3003
Abstract: 54F521 UPS schematics and wiring diagrams
Text: M IL -M -38510/347 1 MAY 1985 r MI LI TA R Y SPECI F I CAT I ON M I CROCI RC UI T S, D I G I T A L , ADVANCED SCHOTTKY T T L , 8 - B I T I D E N T I TY COMPARATOR MONOLI THI C SI LI CON This s p e c i f i c a t i o n is me nt s and Agencies 1. a p p r o v e d f o r use by a l l D e p a r t
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IL-M-38510/347
MIL-M-38510,
MIL-M-38510/347
P1 3003
54F521
UPS schematics and wiring diagrams
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MM4220DF/MM5220DF
Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.
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360746lat
MM4220DF/MM5220DF
mm5221
MM4240
DS8807
MM5017
54S287
MM1402a equivalent
transistor bf 175
MM74C920
MM5061
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Untitled
Abstract: No abstract text available
Text: IBM13T4644MC IBM13T1649NC 1M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1Mx64 Synchronous DRAM SO DIMM • Performance: \ Units \ -10 i CAS Latency E 3 100 •MHz : ;tcK ;Clock Cycle
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IBM13T4644MC
IBM13T1649NC
1Mx64
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78CP18
Abstract: TFK 241 TFK 2561 23 tfk 101 8461 1rc NEC 2561 TFK 082 uPD78CG14 78C14 78C18
Text: MOS M O S Integrated Circuit ^PD 78C P18 A 8 *y h • ' > > " jy ° • - V - r ^ P Z I V t f z L — ¿¿PD 78CP18(A )ii, /« P D 7 8 C 1 8 ( A ) ^ | * ] / 1 ^ X ? ROM £ *7 > • ? 4 A PROM ¡ i g § V y • ^ U P R O M l p nn i i , 1$ I *fe-y h ^ i f (i3fc<Z>a-— t f - X
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78CP18
uPD78C18
IEU-738
PD78CP18
78C12A
78C14
78C18
TFK 241
TFK 2561
23 tfk 101
8461 1rc
NEC 2561
TFK 082
uPD78CG14
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