SATCOM
Abstract: wr137 Grooved C1534 cpr137 WR137 flange WR137 WR137 waveguide Delta Microwave
Text: Delta Datasheet T Te ec ch hn n ii c ca a ll D Da a tt a a o on n D De e ll tt a a M M ii c c rr o ow wa av ve e P P rr o od du uc c tt s s SATCOM Waveguide Filter Model C1534 Features: Compact Size Waveguide flange High Performance Low Loss Specifications:
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C1534
C1534
WR137.
SATCOM
wr137 Grooved
cpr137
WR137 flange
WR137
WR137 waveguide
Delta Microwave
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z046
Abstract: 172B 2N1854
Text: ~L-S-19500/ 172B NAVY 20 November 1968 SUPERSEDING MIL-s-19500/ 172A(NAVY) 180ctober 1961 NffLITARY SEMICONDUCTOR DEVSCE, SPEC1F1CATION TRANSISTOR, PNP, GERMANfUM, TYPE 2N1854 1. SCOPE 1.1 scope. tt-ansisto=i. This ape.ification covers the detail requirements
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L-S-19500/
MIL-s-19500/
180ctober
2N1854
MIL-S19500,
withMSL-S-19500.
MIL-S-195Wi
-NZ04
z046
172B
2N1854
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Untitled
Abstract: No abstract text available
Text: 9: 32 PM S/UNI 9953 ASSP Telecom Standard Product Data Sheet Released ru sd ay ,0 7F eb S/UNI® 9953 ar y, 20 07 06 :5 PM5390 Data Sheet Proprietary and Confidential Released Issue 10 : January, 2007 Do wn l oa de d by C on te n tT ea m of Pa rtm in er In
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PM5390
PMC-2000604,
1152-Pin
PM5390H-FI
PM5390-FGI
PM5390-FI
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1N60H
Abstract: PM94s 1k79h 1N6A SARC chipset 0k77 L5 diodes 4004 F AH32 GFP
Text: 2: 34 PM S/UNI 9953-POS ASSP Telecom Standard Product Data Sheet Preliminary er ,2 00 4 02 :3 PM5392 sd ay ,2 8O ct ob S/UNI® 9953-POS Data Sheet Proprietary and Confidential Released Issue 2 : March 2003 Do wn lo ad ed by C on te n tT ea m of Pa rtm in
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9953-POS
PMC-2030245,
9953-POS
PM5392
PMC-2030245
34x34
1N60H
PM94s
1k79h
1N6A
SARC chipset
0k77
L5 diodes 4004
F AH32 GFP
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Untitled
Abstract: No abstract text available
Text: 0: 36 PM S/UNI 9953-POS ASSP Telecom Standard Product Data Sheet Released ar y, 20 07 07 :0 PM5392 sd ay ,0 7F eb ru S/UNI® 9953-POS Data Sheet Proprietary and Confidential Released Issue 3 : January, 2007 Do wn l oa de d by C on te n tT ea m of Pa rtm
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9953-POS
PM5392
9953-POS
PMC-2030245,
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Untitled
Abstract: No abstract text available
Text: PJSOT03~PJSOT36 STANDARD CAPACITANCE TVS ARRAY VOLTAGE 3 ~ 36 Volts 500 Watts POWER • 500 Watts Peak Pulse Power per Line tp=8/20 s • Low Clamping Voltage • Available for working Voltage Ranging from 3V and 36V MECHANICAL DATA • Case: SOT-23 • Terminals : Solderable per MIL-STD-750,Method 2026
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PJSOT03
PJSOT36
OT-23
MIL-STD-750
PJSOT03
PJSOT05
PJSOT08
PJSOT12
PJSOT15
PJSOT24
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TX-3141
Abstract: 5082-3141 8 pin IC 1038 TXV-3141 Q00S7 LM 3141
Text: HEWLETT-PACKARDn rr/.7n liíx ü 2QE CMPNTS a D 44475Û4 Q00S77ti 3 El HIGH RELIABILITY PIN DIODES FOR STRIPLINE AND MICROSTRIP SWITCHES, ATTENUATORS, AND LIMITERS H e w le tt PACKARD TX-3141 TXB-3141 TXV-3141 TXVB-3141 Generic 5082-3141 T-07-15 Features
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Q00S77ti
TX-3141
TXB-3141
TXV-3141
TXVB-3141
MIL-S-19500
T-07-15
5082-3141
8 pin IC 1038
Q00S7
LM 3141
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MC2124
Abstract: MC2150
Text: mm dd INTEGRATED CIRCUITS FROM MOTOROLA 1 ! I DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50
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MC2000
MC2100
MC2124
MC2150
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fzh 141
Abstract: FZH 131 fzh 105 fzh 115 FZH 105 A MC2003 FZH 121 MC2073 MC2100 MC2002
Text: ged dd INTEGRATED CIRCUITS FROM MOTOROLA l ! l l DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50
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MC2000
MC2100
MC2028/MC2078
MC2128/MC2178
fzh 141
FZH 131
fzh 105
fzh 115
FZH 105 A
MC2003
FZH 121
MC2073
MC2002
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OC 74 germanium transistor
Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Text: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart m ents and Agencies of the Department of Defense.
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MIL-S-19500/125C
-S-19500/125B
2N1500
OC 74 germanium transistor
2N1500
pnp germanium transistor
NEW JERSEY SEMICONDUCTOR uz
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SU SERIES CAPACITOR ALUMINIUM
Abstract: No abstract text available
Text: Panasonic 7 \>S.-0hfSM'3y7:y*t Aluminium Electrolytic Capacitors/MH Japan Malaysia MH Type A Radial Leads) Style: 0 4 /J IS C 5 1 4 1 Series: Aluminium Electrolytic Capacitors (Radial Lead Type) Long life Features i« A S tW fÜ Î : 105 °C 1000 h tt ft
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Untitled
Abstract: No abstract text available
Text: SMZG AND SMZJ 3789 THRU 3809B SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power -1.5 Watts DO-214AA MODIFIED J-BEND DO-215AA i=srr 0155 3.94 0.130 (3.30) ±“ 1 3k 0.016(0.41 ) 0.006 ( 0 .1 5 ) \ TT T 0.058 d'.47)\ 0.038(0.97) I'
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3809B
DO-214AA
DO-215AA
J3789
J3809B
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Untitled
Abstract: No abstract text available
Text: Panasonic Aluminium Electrolytic Capacitors/MH Aluminium Electrolytic Capacitors Radial Lead Type 3 V 7 ) W J - F W T \ \ , ~ - 0 lx S S lD V x V tt Japan Malaysia MH Type A (Radial Leads) Style: 0 4 /J IS C 5 1 4 1 Series: J«.3j upon Long life • •
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Untitled
Abstract: No abstract text available
Text: Female Insulator LPC- PF02 No. of Contacts: 18, 20, 26 Case L P C - 2 6 L ( fo r LPC -26PF02) OD of Compatible Cable 5.5mm 28 —i—i—i—t— f ! | HONDA frtttt t t t t n ittt tt t t t t t t 5 I ‘ VQN0H u._ • T a b le o f S ize •coritacts
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-26PF02)
UL94V-0
79mil)
LPC-26L
HTK-100
KP-339(
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Untitled
Abstract: No abstract text available
Text: 10 FPCSAia I- : MATERIAL !\OVy? • 46± '1'IH: a U L 9 4 V - 0 46NYL0N 7 C ' 9 Ln x - 5 ' ACTUATOR PPS, UL94V-0 U ( t = 0 . 2) PHOSPHOR BRONZE TIN-BISMUTH i . 0 7 'T c ’n > - H U J U = 1.0 MICROMETER MINIMUM X 'v W L T tt! 1. O T Z 'l'L 'D X - H L L U i
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46NYL0N
UL94V-0
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2az marking transistor sot-23
Abstract: transistor 431 N 2N2481 foto transistor TX markings on transistor
Text: M IL-S-19500/268G 25^June 1971. . SliPEHSEDItfG i i» rr tt rr . * / / tr v \ IVllU-O-XOilt m iu *l oo -io u u v /6uoD\i,<AV X/ 1 July 1965 j a ac a q a o a xt a MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON SWITCHING t Y f e S 2 nz 46I An d TX2Nii48i
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MIL-S-19500/268C
MIL-S-19500/28SB
2NZ481
TX2NZ481
c-23254
BU8INK89
2az marking transistor sot-23
transistor 431 N
2N2481
foto transistor
TX markings on transistor
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Untitled
Abstract: No abstract text available
Text: 10 FPCSAia I- : MATERIAL !\OVy? • 46± '1'IH: a U L 9 4 V - 0 46NYL0N 7 C ' 9 Ln x - 5 ' ACTUATOR PPS, UL94V-0 U ( t = 0 . 2) PHOSPHOR BRONZE TIN-BISMUTH i . 0 7 'T c ’n > - H U J U = 1.0 MICROMETER MINIMUM X 'v W L T tt! 1. O T Z 'l'L 'D X - H L L U i
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46NYL0N
UL94V-0
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rcl 3702
Abstract: ICL 3057 C0M30 km 3702 TRW 3894 IR LFN NJU6576 NJU6576CH 50umX 101x34
Text: NJU6576 3 4 3 Ï > X 1 0 1 fc ? y • tt h t t î * h T ' ^ ^ L C D K UH * NJU6576 H W W W Ì K r t & m ' m ì t e t ' l i w 7 * f / ^ m LCD h* 5<rt* T?, 3, 434t' 7h Ö * « f -WAM. CPUW-7i-fX@», 3î>/W «4 *K*in* *T? #*/¡es¡h.£-f. iw x*m -7i« b iiii= t.cp u * t. ä e>*x
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NJU6576
NJU6576l*
NJU6576CH
C0M33
17U-J
-c0m16
NJU6576
NJU657flÂ
rcl 3702
ICL 3057
C0M30
km 3702
TRW 3894
IR LFN
NJU6576CH
50umX
101x34
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ITE 8721
Abstract: fnd 503 7-segment TAA 2761 A 486 motherboard schematic 3860S 486dx isa bios pin assignment RAS 0510 cxd 9897 tn ti77 k244
Text: ISA/486 C H |p g . CepyTlgtt N ette S o t t r a e C o p y ñ f tt O 1962, a * « * d T e d » a i e s i e * . l w x M t o n i I C o p y r i i h t O 1992 . Q ñ p » » d T c c t n o f a p B » , ! ^ . A B SIduR am i Poned ib UJ5A. Tw dw u U t h w lw lgim iil
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141C
Abstract: LC74HC51 T370
Text: SA N Y O = ; ¥ * 2 § - n - LC74HC51 f t Na2 0 2 6 a C M Q SM & M M aV 'vf <.256 X D u a l 2 - In p u t A N D / Q F | ìm t e fis s r G a te ¥mM>fWñzi~X Na*2026 WS L C 7 4 I I C I 5 1 Ì J AND OR 1NVEKTER I Ç % ;? 1 A -y -5. / / • C M O S f/ V J > y - h 7 ' D t 3 l t « 8 l / ,
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LC74HC51
LC74HC5UJ
74LS0
Na2026-4M
141C
LC74HC51
T370
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2SD1555
Abstract: nec 2035 2SD880 2035 2SC3346 HITACHI 2055 2SD2023 2SC4817 2SD2404 2SC2631A
Text: - m Manuf. □— A □— A □— A □— A □— A 2SD 2026 2SD 2027 2SD 2028 H tö T 2SD 2032 2S0 2033^2SD 2034 □ □ □ □ □ □ J y f / 2S0 2042 2SD 2043, 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2044 2045 _ 2046 ^ 2047 2048 2049 2050 2051
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2SD1394
2SD1481
2SD1217
2SD2027
2SD880
2SD1567
2SD856
2SD1248
2SD1634
2SD1928
2SD1555
nec 2035
2035
2SC3346
HITACHI 2055
2SD2023
2SC4817
2SD2404
2SC2631A
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LD5203
Abstract: asp 1103 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN U881 AC176K KPSA 10-15 Scans-048 TL836 Leipzig U 3211
Text: SERVICE-M ITTEILUNGEN V E ft UFT I N D U S T K I E V E K T * I E ft R U N D F U N K U N O F E t N S E H E N ErjSiH Iradio - te/evisfon I A u tg a b * 1988 Seit* 7 1 - 4 M i t t e i l u n g a u s d en VBB S t e r n - B a d l o B e r l i n P e h l e r a u c h a t r a t e g l e HMK-D 1 0 0 L P 5 » C o « p a t e * l * i t e * p l a t t e
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Untitled
Abstract: No abstract text available
Text: ERICSSON í PTE 20264* 10 Watts, 1.8-1.9 GHz Cellular Radio RF Po w e r T ransistor Description The 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts m inim um output power, it may be used for both CW and PEP
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2SK597
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 3EE D S3 7 cH 7 0 7 b 00GT23fl 4 T-29-25 2026 N-Channel Junction Silicon FET Capacitor Microphone Applications 2216 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic
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7cH707b
00GT23fl
J-29-25
-100uA
T-91-20
SC-43
2SK597
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