AM28F020
Abstract: No abstract text available
Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current
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Am28F020
32-pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV104B 4 Megabit 512 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV104B
32-Pin
moLV104B-55R
Am29LV104B-70
Am29LV104B-90
Am29LV104B-120
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Product Selector Guide
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV102B
32-Pin
Am29LV102B-55R
Am29LV102B-70
Am29LV102B-90
Am29LV102B-120
Product Selector Guide
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AM29F010
Abstract: AM29F01055 Am2F010
Text: FINAL Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ High performance
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Am29F010
AM29F01055
Am2F010
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am29f040b
Abstract: Publication# 19957 Am29F040
Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology
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Am29F040B
Am29F040
pre032
TSR032
32-Pin
16-038-TSOP-2
Publication# 19957 Am29F040
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDH Am29LV001 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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OCR Scan
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Am29LV001
Am29LV001B
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and
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OCR Scan
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PDF
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Am29LV102B
32-Pin
TSR032)
AM29LV102B-55R
AM29LV102B-70
AM29LV102B-90
AM29LV102B-120
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Am26F020
Abstract: No abstract text available
Text: FINAL Am28F020 Advanced 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory n j ïie ls DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption ■ ■ Compatible with JEDEC-standard byte-wide
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OCR Scan
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PDF
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Am28F020
32-Pin
Am26F020
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Untitled
Abstract: No abstract text available
Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
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OCR Scan
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PDF
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Am28F020A
32-pin
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am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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OCR Scan
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Am29F040B
Am29F040
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AM29F01OA-45
Abstract: No abstract text available
Text: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically
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OCR Scan
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PDF
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Am29F010A
Am29F010
20-year
Am29F01
AM29F01OA-45
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Untitled
Abstract: No abstract text available
Text: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase
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OCR Scan
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PDF
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Am28F256
32-Pin
AM28F256
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IC 555 architecture
Abstract: No abstract text available
Text: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■
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OCR Scan
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PDF
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Am29LV001
IC 555 architecture
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Am29F010 Rev. A
Abstract: No abstract text available
Text: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
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OCR Scan
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PDF
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20-year
32-pin
Am29F010A
Am29F010 Rev. A
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Untitled
Abstract: No abstract text available
Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e
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OCR Scan
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32-Pin
Am28F010A
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD Am29LV010B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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OCR Scan
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PDF
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Am29LV010B
rangeSR032)
32-Pin
Am29LV01
Am29LV010B-45R
OB-55
Am29LV010B-70
Am29LV010B-120
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AM29F040B
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology
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OCR Scan
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PDF
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Am29F040B
Am29F040
twHwi-12-
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Untitled
Abstract: No abstract text available
Text: FINAL AMDZ1 Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
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OCR Scan
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PDF
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Am29F010
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am29lv040b
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29LV040B 4 Megabit 512 K x 8-Bit CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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OCR Scan
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PDF
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Am29LV040B
32-Pin
16-038FPO-5
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Untitled
Abstract: No abstract text available
Text: AMD£I Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current
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OCR Scan
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PDF
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Am28F020A
32-pin
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current
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OCR Scan
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PDF
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Am28F512A
32-Pin
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Untitled
Abstract: No abstract text available
Text: FINAL AMDZ1 Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
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OCR Scan
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PDF
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Am29F010
5555h
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Untitled
Abstract: No abstract text available
Text: AMD£I A m 2 9 F 0 1 0 A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
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OCR Scan
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PDF
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Am29F010
20-year
Am29F010A
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance
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OCR Scan
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Am28F010A
32-pin
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