Untitled
Abstract: No abstract text available
Text: Flexibility & Innovation …. DS0159_01 19/03/01 DATA SHEET Part Number 315.00 MHz SAW Resonator TSR0315-L1 SPECIFICATION PACKAGE F-11 PRODUCT FEATURES : Ø HIGH STABILITY Ø LOW LOSS Ø SMALL SIZE CONTACT : TEMEX S.A.W. PUITS-GODET 8, 2000 NEUCHÂTEL SWITZERLAND
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TSR0315-L1
DS0159
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Untitled
Abstract: No abstract text available
Text: Flexibility & Innovation …. DS0160_01 19/03/01 DATA SHEET Part Number 315.00 MHz SAW Resonator TSR0315-L2 SPECIFICATION PACKAGE 5.0X5.0 MM SMD PRODUCT FEATURES : Ø HIGH STABILITY Ø LOW LOSS Ø SMALL SMD PACKAGE CONTACT : TEMEX S.A.W. PUITS-GODET 8, 2000 NEUCHÂTEL
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TSR0315-L2
DS0160
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Untitled
Abstract: No abstract text available
Text: Flexibility & Innovation …. DS0212_01 16.05.01 Part Number 388.95 MHz SAW Resonator TSR0388-L1 SPECIFICATION PRODUCT FEATURES : TA61 Cxxx Ø HIGH STABILITY Ø LOW LOSS Where xxx is lot number Ø SMALL SIZE TEMEX S.A.W. CONTACT : PUITS-GODET 8, 2000 NEUCHÂTEL
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DS0212
TSR0388-L1
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Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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AM28F020
Abstract: No abstract text available
Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current
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Am28F020
32-pin
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Untitled
Abstract: No abstract text available
Text: User’s Manual The sales of these products are limited for China, Hong Kong, and India. R7F0C008A/B/F, R7F0C009A/B/F 16 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications,
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R7F0C008A/B/F,
R7F0C009A/B/F
16-Bit
R01UH0399EJ0200
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Untitled
Abstract: No abstract text available
Text: User’s Manual The sales of these products are limited for China, Hong Kong, and India. R7F0C01072DNP, 16 R7F0C010B2DFP-C User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications,
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R7F0C01072DNP,
R7F0C010B2DFP-C
16-Bit
R01UH0422EJ0110
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV104B 4 Megabit 512 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV104B
32-Pin
moLV104B-55R
Am29LV104B-70
Am29LV104B-90
Am29LV104B-120
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Product Selector Guide
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV102B
32-Pin
Am29LV102B-55R
Am29LV102B-70
Am29LV102B-90
Am29LV102B-120
Product Selector Guide
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AM29F010
Abstract: AM29F01055 Am2F010
Text: FINAL Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ High performance
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Am29F010
AM29F01055
Am2F010
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nec f0123h
Abstract: F004C f0103h nec f0114h nec 44 pin LQFP f0114h CSI00 F0144H FFF99H NEC. F0114H PD78F1178
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT 78K0R/KH3 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The 78K0R/KH3 is a 16-bit single-chip microcontroller that incorporates a 78K0R core. This is an All Flash microcontroller, which has a single power supply flash memory with a self programming
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78K0R/KH3
16-BIT
78K0R/KH3
78K0R
PD78F1178Note
PD78F1177Note
PD78F1176
PD78F1174
PD78F1175Note
nec f0123h
F004C
f0103h
nec f0114h
nec 44 pin LQFP f0114h
CSI00
F0144H
FFF99H
NEC. F0114H
PD78F1178
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am29f040b
Abstract: Publication# 19957 Am29F040
Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology
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Am29F040B
Am29F040
pre032
TSR032
32-Pin
16-038-TSOP-2
Publication# 19957 Am29F040
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDH Am29LV001 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV001
Am29LV001B
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and
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Am29LV102B
32-Pin
TSR032)
AM29LV102B-55R
AM29LV102B-70
AM29LV102B-90
AM29LV102B-120
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Untitled
Abstract: No abstract text available
Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
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Am28F020A
32-pin
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am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F040B
Am29F040
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AM29F01OA-45
Abstract: No abstract text available
Text: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically
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Am29F010A
Am29F010
20-year
Am29F01
AM29F01OA-45
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Untitled
Abstract: No abstract text available
Text: AMD£I Am28F256 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase
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Am28F256
32-Pin
AM28F256
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IC 555 architecture
Abstract: No abstract text available
Text: AMDH Am29LV001 B 1 Megabit 128 K * 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ ■
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Am29LV001
IC 555 architecture
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Am29F010 Rev. A
Abstract: No abstract text available
Text: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements
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20-year
32-pin
Am29F010A
Am29F010 Rev. A
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Untitled
Abstract: No abstract text available
Text: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time
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Am28F256
32-Pin
TS032--32-Pin
16-038-TSOP-2
TSR032--32-Pin
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Untitled
Abstract: No abstract text available
Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e
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32-Pin
Am28F010A
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD Am29LV010B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV010B
rangeSR032)
32-Pin
Am29LV01
Am29LV010B-45R
OB-55
Am29LV010B-70
Am29LV010B-120
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AM29F040B
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology
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Am29F040B
Am29F040
twHwi-12-
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