Untitled
Abstract: No abstract text available
Text: TSOPII32-P-400-1.27-K Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
|
Original
|
PDF
|
TSOPII32-P-400-1
|
MD51V64400
Abstract: MD51V64400-50 MD51V64400-60 SOJ32-P-400-1 TSOP-II-32
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
MD51V64400
SOJ32-P-400-1
MD51V64400
MD51V64400-50
MD51V64400-60
TSOP-II-32
|
SOJ32-P-400-1
Abstract: No abstract text available
Text: E2G0140-18-11 ¡ Semiconductor MD51V65800 ¡ Semiconductor This version:MD51V65800 Mar. 1998 8,388,608-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MD51V65800 is a 8,388,608-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
|
Original
|
PDF
|
E2G0140-18-11
MD51V65800
608-Word
MD51V65800
32-pin
SOJ32-P-400-1
|
SOJ32-P-400-1
Abstract: No abstract text available
Text: FEDD51V65400E-03 OKI Semiconductor MD51V65400E Issue Date: Jul. 19, 2005 16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSD51V65400E is a 16,777,216-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MD51V65400E achieves high integration, high-speed operation, and
|
Original
|
PDF
|
FEDD51V65400E-03
MD51V65400E
216-Word
MSD51V65400E
MD51V65400E
32-pin
SOJ32-P-400-1
|
a20 tssop-8
Abstract: HN58X24512FPIAG Hitachi DSA00279 csp48
Text: HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs and EEPROM February, 2002 Product Marketing Team System Memory Business Unit Semiconductor and Integrated Circuits Hitachi, Ltd. HITACHI Low Power SRAM and EEPROM HITACHI Low Power SRAMs HITACHI Low Power SRAM and EEPROM
|
Original
|
PDF
|
HN58V257A
HN58C256A
HN58C257A
HN58S65A
HN58V65A
HN58V66A
HN58V1001
HN58C1001
HN58S256A
HN58V256A
a20 tssop-8
HN58X24512FPIAG
Hitachi DSA00279
csp48
|
SOJ32
Abstract: 1741R
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
J2G0140-18-11
MD51V65800
MD51V65800
608-Word
MD51V65800CMOS8
42CMOS
32SOJ32TSOP
09664ms
32400milSOJ
SOJ32
1741R
|
425M
Abstract: DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240
Text: 2. 外形寸法図 2. 外形寸法図 2 2-1. パッケージ外形寸法 - 2 2-1-1. パッケージ寸法表示記号 - 2 2-1-2. リード位置許容値について - 3
|
Original
|
PDF
|
P-LFBGA144-1313-0
P-BGA256-2727-1
P-BGA352-3535-1
P-BGA420-3535-1
P-BGA560-3535-1
P-TFLGA32-0806-0
425M
DIP18
DIP20
DIP28
DIP32
DIP40
SOJ28-P-400-1
PGA wire bonding
IPGA400-C-S33U-1
PGA240
|
MD51V65405
Abstract: SOJ32-P-400-1 l915
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
|
SOJ32-P-400-1
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
|
Original
|
PDF
|
FEDD51V65400E-03
MD51V65400E
216-Word
MSD51V65400E
MD51V65400E
32-pin
SOJ32-P-400-1
|
64M-DRAM
Abstract: No abstract text available
Text: INFORMATION NOTE Second Generation 64M - DRAM Characterisation Data 10.96 INFO64M4.DOC 64M-DRAM This information note is intended to provide technical information on the SIEMENS second generation 64M-DRAM Dynamic Access Memories operating at the 3.3 V VCC
|
Original
|
PDF
|
INFO64M4
64M-DRAM
HYB3164
400/800/160AJ/AT
405/805/165AJ/AT
64M-DRAM
|
SOJ32-P-400-1
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
MD51V65800
SOJ32-P-400-1
|
SOJ32-P-400-1
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
|
MD51V65405
Abstract: MD51V65405-50 MD51V65405-60 SOJ32-P-400-1
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
|
Original
|
PDF
|
MD51V65405
SOJ32-P-400-1
MD51V65405
MD51V65405-50
MD51V65405-60
|
MD51V64405
Abstract: MD51V64405-50 MD51V64405-60 SOJ32-P-400-1 a12r
Text: E2G0137-18-11 ¡ Semiconductor MD51V64405 ¡ Semiconductor This version:MD51V64405 Mar. 1998 16,777,216-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MD51V64405 is a 16,777,216-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
|
Original
|
PDF
|
E2G0137-18-11
MD51V64405
216-Word
MD51V64405
32-pin
MD51V64405-50
MD51V64405-60
SOJ32-P-400-1
a12r
|
|
|
MD51V64400
Abstract: MD51V64400-50 MD51V64400-60 SOJ32-P-400-1
Text: E2G0135-18-11 ¡ Semiconductor MD51V64400 ¡ Semiconductor This version:MD51V64400 Mar. 1998 16,777,216-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MD51V64400 is a 16,777,216-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
|
Original
|
PDF
|
E2G0135-18-11
MD51V64400
216-Word
MD51V64400
32-pin
MD51V64400-50
MD51V64400-60
SOJ32-P-400-1
|
Untitled
Abstract: No abstract text available
Text: TSOPII32-P-400-0.80C 32 Unit : mm 17
|
OCR Scan
|
PDF
|
TSOPII32-P-400-0
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
|
OCR Scan
|
PDF
|
TC554001
AF/AFT/ATR-70V#
TC554001AF/AFT/ATR
304-bit
10mA/MHz
OP32-P-525-1
775TYP
32-P-400-1
|
A15C
Abstract: TC554001
Text: T O S H IB A TC554001AF/AFT/ATR-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
|
OCR Scan
|
PDF
|
TC554001
AF/AFT/ATR-70
TC554001AF/AFT/ATR
304-bit
10mA/MHz
OP32-P-525-1
A15C
|
A15C
Abstract: TC554001 TSOP-II-32
Text: TOSHIBA TC554001 AF/AFT/ATR-70V#-85V#-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
|
OCR Scan
|
PDF
|
TC554001
AF/AFT/ATR-70V
TC554001AF/AFT/ATR
304-bit
10mA/MHz
OP32-P-525-1
32-P-400-1
A15C
TSOP-II-32
|
Untitled
Abstract: No abstract text available
Text: f i f e L G S e m ï c o n C GM71V65803C GM71VS65803CL 8,388,608 WORDS x 8 BIT o ., L td . w w .,f c .iw . CMOS DYNAMIC RAM Description Pin Configuration The GM71V(S 65803C/CL is the new generation dynamic RAM organized 8,388,608 words by 8bits. The GM71V(S)65803C/CL utilizes advanced CMOS
|
OCR Scan
|
PDF
|
GM71V65803C
GM71VS65803CL
GM71V
65803C/CL
|
Untitled
Abstract: No abstract text available
Text: GM71V64403C GM71VS64403CL 16,777,216 w o r d s x 4 b i t f f l n LG S^micon uo.,Lia. Co Ltd LlÆ î^emicon CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS
|
OCR Scan
|
PDF
|
GM71V64403C
GM71VS64403CL
GM71V
64403C/CL
|
Untitled
Abstract: No abstract text available
Text: GM71V64403C GM71VS64403CL LG Semicon Co.,Ltd. 16,777,216 WORDS x 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM7iV S 64403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)64403C/CL utilizes advanced CMOS
|
OCR Scan
|
PDF
|
GM71V64403C
GM71VS64403CL
64403C/CL
GM71V
32SOJ/TSOPII
GM7IVS64403CL
|
Untitled
Abstract: No abstract text available
Text: GM71V65403A GM71VS65403AL LG Semicon Co.,Ltd. 16,777,216 WORDS x 4 BIT* CM OS DYNAM IC RAM Description Pin Configuration 32 S O J /T S O P I I The GM71 V S 65403A/AL is the new generation dynam ic RAM organized 16,777,216 w ords by 4bits. The G M 71V(S)65403A/AL utilizes advanced CM OS
|
OCR Scan
|
PDF
|
GM71V65403A
GM71VS65403AL
5403A/AL
GN171V
GM71V
5403A/AL
TSOPII32
6S403A/AL
|
K/GM71VS65403CL
Abstract: No abstract text available
Text: GM71V65403C GM71VS65403CL 16,777,216 WORDS x 4 BIT ¿ f c LG Sem ïcon wCo., Ltd. w .,f c .iw . CMOS DYNAMIC RAM Pin Configuration Description The GM71V(S 65403C/CL is the new generation dynamic RAM organized 16,777,216 words by 4bits. The GM71V(S)65403C/CL utilizes advanced CMOS
|
OCR Scan
|
PDF
|
GM71V65403C
GM71VS65403CL
GM71V
65403C/CL
K/GM71VS65403CL
|