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    TSOP 56 PACKAGE NAND MEMORY Search Results

    TSOP 56 PACKAGE NAND MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 56 PACKAGE NAND MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    electronique package

    Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
    Text: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu


    Original     		PDF D-85737 S-19268 FEDE-FLASH-0998 electronique package electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit

    TH58NVG2S3

    Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
    Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


    Original     		PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory

    KS32P6632

    Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
    Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor


    Original     		PDF 056KB KS32P6632 NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		PDF 128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    SpecTek flash

    Abstract: Micron 512MB nand FLASH SpecTek nand spectek nand flash M2 8gb pinout SpecTek nand 8 M29A 48-PIN 04/SpecTek flash flash chip 8gb
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN 09005aef81d3348f 09005aef81d3345f SpecTek flash Micron 512MB nand FLASH SpecTek nand spectek nand flash M2 8gb pinout SpecTek nand 8 M29A 04/SpecTek flash flash chip 8gb

    Untitled

    Abstract: No abstract text available
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN See9/05 09005aef81d3348f 09005aef81d3345f

    Micron MT29F8G08

    Abstract: MT29F4G16BABWP Micron NAND MT29F4G16 FLASH MEMORY 29F MICRON 63 MT29FxG08 MT29F2G16AABWP nand 29F MT29F2G08AABWP
    Text: 2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)


    Original     		PDF x8/x16 MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP 09005aef818a56a7 09005aef81590bdd Micron MT29F8G08 MT29F4G16BABWP Micron NAND MT29F4G16 FLASH MEMORY 29F MICRON 63 MT29FxG08 MT29F2G16AABWP nand 29F MT29F2G08AABWP

    SpecTek flash

    Abstract: No abstract text available
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN 09005aef81d3348f 09005aef81d3345f SpecTek flash

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


    Original     		PDF FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


    Original     		PDF FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de

    Micron NAND flash 32gb

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


    Original     		PDF FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de Micron NAND flash 32gb

    MT29F16G08

    Abstract: MT29F8G08BAA MT29F4G08AAA mt29f16g MT29F8G08DAA Micron MT29F8G08 16G nand flash 16GB Nand flash 29f4g08 MT29F16G08FAA
    Text: 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Features NAND Flash Memory MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA Features Figure 1: • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes)


    Original     		PDF MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA MT29F8G08DAA. 09005aef81b80e13/Source: 09005aef81b80eac MT29F16G08 MT29F8G08BAA MT29F4G08AAA mt29f16g MT29F8G08DAA Micron MT29F8G08 16G nand flash 16GB Nand flash 29f4g08 MT29F16G08FAA

    Untitled

    Abstract: No abstract text available
    Text: 512Mb through 8Gb x8/x16 Multiplex NAND Flash Memory NAND Flash Memory Features Figure 1: 48-PIN TSOP Type 1 • FNN Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes)


    Original     		PDF 512Mb x8/x16 48-PIN 09005aef81d3348f 09005aef81d3345f

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory Features Figure 1: TSOP Example • ONFI 1.0 compliant1 • Single-level cell SLC technology • Organization – Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words)


    Original     		PDF 09005aef830b54cd/PDF: 09005aef830adc7c

    SAMSUNG NAND FLASH TRANSLATION LAYER

    Abstract: SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl
    Text: APPLICATION NOTE for NAND Flash Memory Revision 2.0 Memory Product & Technology Division 1999. 12. 28 Product Planning & Application Engineering The Leader in Memory Technology 1 ELECTRONICS TABLE OF CONTENTS ¡ áINTRODUCTION 5. UTILIZING THE DEVICE IN THE


    Original     		PDF 128Mb 256Mb) 256Mb 512Mb 500us SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND Flash Qualification Report SAMSUNG NAND FLASH TRANSLATION LAYER FTL vhdl code hamming ecc SAMSUNG 256Mb NAND Flash Qualification Report KS32P6632 SAMSUNG NAND FTL NAND FLASH TRANSLATION LAYER FTL vhdl code hamming block diagram code hamming using vhdl

    TSOP 56 Package nand memory

    Abstract: No abstract text available
    Text: S3F49FAX for Compact Flash SPECIFICATION Revision 1.0 HELP DESK Sejin, Ahn herlock@sec.samsung.com Sanghun, Song (hoontour@samsung.com) SPECIFICATION S3F49FAX Table of Contents 1.1 1.2 1.3 2.1 2.2 Introduction .2


    Original     		PDF S3F49FAX S3F49FAX 100-pin 100-TQFP-1414) 100-TQFP-1414 100-TQFP-1414 TSOP 56 Package nand memory

    M8512

    Abstract: samsung dram AM8512 TSOP 56 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER


    OCR Scan     		PDF 100ns 150ns 16Bit 18Bit M8512 samsung dram AM8512 TSOP 56 Package nand memory