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    TSOP 54 PACKAGE USED IN WHERE Search Results

    TSOP 54 PACKAGE USED IN WHERE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 54 PACKAGE USED IN WHERE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L/CY14B104N PDF

    Sandisk Flash memory

    Abstract: Sandisk TSOP sandisk flash controller SDTB-64 sandisk flash drive 48 pin controller SDTB-32 SanDisk TSOP 56 socket 14x14 circuit diagram sandisk 64 mb SDFCSTB
    Text: Flash ChipSet Product Manual CORPORATE HEADQUARTERS 140 Caspian Court Sunnyvale, CA 94089-9820 408-542-0500 FAX: 408-542-0503 URL: http://www.sandisk.com SanDisk Corporation general policy does not recommend the use of its products in life support applications where in a


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L, CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N PDF

    TSOP II 54

    Abstract: TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L/CY14B104N TSOP II 54 TSOP 48 thermal resistance junction to case TSOP 48 thermal resistance TSOP 54 thermal resistance PDF

    TSOP 54 PIN

    Abstract: TSOP 54 Package CY14B104L CY14B104N
    Text: PRELIMINARY CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N TSOP 54 PIN TSOP 54 Package CY14B104L CY14B104N PDF

    mb87020

    Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
    Text: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,


    Original     		SD-SG-20342-9/96 mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14E104L/CY14E104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E104L/CY14E104N 8/256K CY14E104L) CY14E104N) CY14E104L/CY14E104N PDF

    CY14B104L

    Abstract: CY14B104N
    Text: PRELIMINARY CY14B104L, CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N CY14B104L CY14B104N PDF

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI PDF

    IS42SM16800E-6BLI

    Abstract: No abstract text available
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM DECEMBER 2010 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42SM16800E-6BLI PDF

    IS42S16160B(D)-7TL

    Abstract: No abstract text available
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42S16160B(D)-7TL PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor


    Original     		CY14B104L/CY14B104N 8/256K CY14B104L/CY14B104N to10ns to15ns PDF

    TSOP 54 Package

    Abstract: TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package
    Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Feature Functional Description • 15 ns, 25 ns, and 45 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor


    Original     		CY14B104L/CY14B104N 8/256K CY14B104L/CY14B104N to10ns to15ns TSOP 54 Package TSOP 48 thermal resistance TSOP 54 PIN TSOP 54 Package used in where TSOP II 54 TSOP II 54 Package PDF

    TSOP 54 Package

    Abstract: CY14B104L CY14B104N
    Text: CY14B104L, CY14B104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) ■ Hands off Automatic STORE on power down with only a small


    Original     		CY14B104L, CY14B104N 8/256K CY14B104L) CY14B104N) CY14B104L/CY14B104N TSOP 54 Package CY14B104L CY14B104N PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E108L, CY14E108N 1024K 8/512K CY14E108L) CY14E108N) CY14E108L/CY14E108N PDF

    SRAM 54-PIN TSOP

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104L/CY14B104N 4-Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns and 25 ns access times • Internally organized as 512K x 8 or 256K x 16 • Hands-off automatic STORE on power down with only a small capacitor • STORE to QuantumTrap nonvolatile elements is initiated


    Original     		CY14B104L/CY14B104N 8/256K CY14B104L/CY14B104N to10ns to15ns SRAM 54-PIN TSOP PDF

    CY14E104N

    Abstract: No abstract text available
    Text: PRELIMINARY CY14E104L/CY14E104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E104L/CY14E104N 8/256K CY14E104L/CY14E104N CY14E104N PDF

    TSOP 48 thermal resistance

    Abstract: TSOP 54 Package TSOP 54 PIN 44TSOP
    Text: PRELIMINARY CY14E104L/CY14E104N 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 15 ns, 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 512K x 8 (CY14E104L) or 256K x 16 (CY14E104N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E104L/CY14E104N 8/256K CY14E104L) CY14E104N) CY14E104L/CY14E104N TSOP 48 thermal resistance TSOP 54 Package TSOP 54 PIN 44TSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14E102L, CY14E102N 2-Mbit 256K x 8/128K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 256K x 8 (CY14E102L) or 128K x 16 (CY14E102N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E102L, CY14E102N 8/128K CY14E102L/CY14E102N PDF

    CY14B102N

    Abstract: CY14B102L
    Text: ADVANCE CY14B102L, CY14B102N 2-Mbit 256K x 8/128K x 16 nvSRAM Features Functional Description • 15 ns, 25 ns, and 45 ns access times ■ Internally organized as 256K x 8 (CY14B102L) or 128K x 16 (CY14B102N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B102L, CY14B102N 8/128K CY14B102L) CY14B102N) CY14B102L/CY14B102N CY14B102N CY14B102L PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14E108L, CY14E108N 1024K 8/512K CY14E108L) CY14E108N) CY14E108L/CY14E108N PDF

    CY14B108N-BA25XI

    Abstract: 54TSOP
    Text: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small


    Original     		CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) CY14B108L/CY14B108N CY14B108N-BA25XI 54TSOP PDF

    CY14B104LA-ZSP25XI

    Abstract: TSOP II 54
    Text: PRELIMINARY CY14B104LA, CY14B104NA 4 Mbit 512K x 8/256K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 512K x 8 (CY14B104LA) or 256K x 16 (CY14B104NA) ■ Hands off Automatic STORE on power down with only a small


    Original     		CY14B104LA, CY14B104NA 8/256K CY14B104LA/CY14B104NA CY14B104LA-ZSP25XI TSOP II 54 PDF