MBM29LV800TA-70PF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA
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DS05-20845-6E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0211
MBM29LV800TA-70PF
FPT-48P-M19
FPT-48P-M20
MBM29LV800BA-70PFTN cost
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small
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CY14B101LA
CY14B101NA
8/64K
CY14B101LA/CY14B101NA
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
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MX29LV160CBTC-90
Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of
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MX29LV160C
16M-BIT
2Mx8/1Mx16]
100mA
Pac9/2006
MX29LV160CBTC-90
29LV160C
MX29LV160B
MX29LV160CT
SA10
SA11
SA12
SA13
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AMIC TECHNOLOGY
Abstract: A616316 A616316S
Text: A616316 Series Preliminary 64K X 16 BIT HIGH SPEED CMOS SRAM Document Title 64K X 16 BIT HIGH SPEED CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 14, 2000 Preliminary July, 2000, Version 0.0 AMIC Technology, Inc.
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A616316
170mA
165mA
AMIC TECHNOLOGY
A616316S
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TSOP 86 Package
Abstract: MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422YC-12
Text: MX23L6422 3.3 Volt 64M-BIT 4M x 16 / 2M x 32 Mask ROM with Page Mode ORDER INFORMATION FEATURES • Bit organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) • Fast access time - Random access: 110ns (max.) for 3.15~3.6V 120ns (max.) for 3.0~3.6V
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422MC-12
MX23L6422YC-12
TSOP 86 Package
MX23L6422
MX23L6422YC-12
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29F200
Abstract: MX29F200CT 555H
Text: MX29F200C T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90ns Compatible with MX29F200T/B device Low power consumption
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MX29F200C
256Kx8/128Kx16]
131072x16/262144x8
55/70/90ns
MX29F200T/B
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
detecti4/2005
29F200
MX29F200CT
555H
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MX29F400BTC-55
Abstract: MX29F400BMC-55 2223H MX29F400BTC-70
Text: MX29F400T/B 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption
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MX29F400T/B
512Kx8/256Kx16]
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/12/2001
NOV/12/2001
FEB/04/2002
MX29F400BTC-55
MX29F400BMC-55
2223H
MX29F400BTC-70
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RENESAS tft application notes
Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0300Z
16-Mbit
1048576-words
16-bit,
52pin
RENESAS tft application notes
R1LV1616RBG-5S
R1LV1616RSA-5S
uTSOP
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29F800T
Abstract: MX29F800BTC-90 22D6H
Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
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MX29F800T/B
1Mx8/512Kx16]
70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
P39-40
OCT/21/2002
MAY/29/2000
29F800T
MX29F800BTC-90
22D6H
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Untitled
Abstract: No abstract text available
Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV1616R
wordx16bit
REJ03C0101-0400Z
16-Mbit
1048576-words
16-bit,
52pin
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Untitled
Abstract: No abstract text available
Text: Am29LV200B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV200B
FBA048
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MX29LV401T
Abstract: SA10
Text: ADVANCED INFORMATION MX29LV401T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV401T/B
55R/70/90ns
9us/11us
16K-Byte
32K-Byte
64K-Byte
PM0853
48-Ball
MX29LV401T
SA10
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HT 1200-4
Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Text: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher
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March/98
intern844-347360
HT 1200-4
IC51-2084-1052-11
IC51-0242-1341
YAMAICHI ic234
transistor fpq 630
IC51-0404-1511
fpq-144-0.5-03
648-0482211-A01
IC189 Series Open Top SOP, SSOP, TSOP Type I a
HLQFP 176 Package drawing
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AMD Am29lv400bt
Abstract: No abstract text available
Text: Am29LV400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV400B
8-Bit/256
16-Bit)
Am29LV400
FBA048.
AMD Am29lv400bt
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D800BT90
Abstract: No abstract text available
Text: Am29DL800B Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29DL800B
D800BT90
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Untitled
Abstract: No abstract text available
Text: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise
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V424S
IDT71V424L
10/12/15ns
36-pin,
44-pin,
IDT71V424
304-bit
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Untitled
Abstract: No abstract text available
Text: 1 M -BIT 64 K X 1 6 CM OS M ULTIPLE-TIM E-PROGRAM M ABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% program/erase voltage Fast access time: 70/90/100/120 ns
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16-bit
44-pin
40-pin
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 8 M 1 M x 8 BIT MBM29F080-12-X • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash
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MBM29F080-12-X
48-pin
40-pin
44-pin
F40008S-1C-1
44-LE
F44023S-2C-2
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Untitled
Abstract: No abstract text available
Text: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times
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16-BIT)
10/12/15ns
44-pin,
IDT71V416
194304-bit
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Untitled
Abstract: No abstract text available
Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,
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128Kx
IDT71V024L
T71V024L
576-bit
10-338-207Q
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Untitled
Abstract: No abstract text available
Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)
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128KX
IDT71T024
150ns,
200ns
10jxA
32-pin,
46-BALL
IDT71T024
576-bit
10-338-207Q
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Untitled
Abstract: No abstract text available
Text: Features Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time -120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time -1 0 seconds Byte-by-Byte Programming - 30 |is/Byte Typical
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AT49BV/LV040
120rray
MO-142
AT49BV020
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Untitled
Abstract: No abstract text available
Text: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its
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o00oo
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