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    TSOP 1333 Search Results

    TSOP 1333 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    133-311F-11H Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 14 Column, Direct Orthogonal, Double End Wall, 1.5mm Wipe, APP. Visit Amphenol Communications Solutions
    133-311B-21D Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 6 Column, Direct Orthogonal, Double End Wall, 2.25mm Wipe, Nickel Sulfamate. Visit Amphenol Communications Solutions
    133-311E-12H Amphenol Communications Solutions Paladin Plus 3-Pair, 12 Column, Direct Orthogonal Header, Double End Wall, 1.5mm Wipe, APP Visit Amphenol Communications Solutions
    133-311E-22H Amphenol Communications Solutions Paladin Plus 3-Pair, 12 Column, Direct Orthogonal Header, Double End Wall, 2.25mm Wipe, APP Visit Amphenol Communications Solutions
    133-311G-11D Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 3-Pair, 16 Column, Direct Orthogonal, Double End Wall, 1.5mm Wipe, Nickel Sulfamate. Visit Amphenol Communications Solutions
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    TSOP 1333 Price and Stock

    Vishay Semiconductors TSOP13336

    SENSOR REMOTE REC 36.0KHZ 30M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSOP13336 Bulk 1,746 1
    • 1 $0.87
    • 10 $0.87
    • 100 $0.5703
    • 1000 $0.5087
    • 10000 $0.44224
    Buy Now

    Vishay Semiconductors TSOP13338

    SENSOR REMOTE REC 38.0KHZ 30M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSOP13338 Bulk 1,575 1
    • 1 $0.87
    • 10 $0.87
    • 100 $0.5703
    • 1000 $0.5087
    • 10000 $0.44224
    Buy Now

    Vishay Intertechnologies TSOP13336

    IR SENSOR IC 36KHZ,-e3 - Bulk (Alt: TSOP13336)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TSOP13336 Bulk 6 Weeks 1,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.393
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    Mouser Electronics TSOP13336
    • 1 $0.78
    • 10 $0.565
    • 100 $0.484
    • 1000 $0.443
    • 10000 $0.402
    Get Quote
    Newark TSOP13336 Bulk 1,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.459
    • 10000 $0.423
    Buy Now

    Vishay Intertechnologies TSOP13338

    IR SENSOR IC 38KHZ,-e3 - Bulk (Alt: TSOP13338)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TSOP13338 Bulk 6 Weeks 1,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.393
    Buy Now
    Mouser Electronics TSOP13338 8
    • 1 $0.78
    • 10 $0.501
    • 100 $0.462
    • 1000 $0.434
    • 10000 $0.42
    Buy Now
    Newark TSOP13338 Bulk 1,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.459
    • 10000 $0.423
    Buy Now

    Vishay BLH TSOP13338P16FTR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TSOP13338P16FTR 455 4
    • 1 -
    • 10 $1.3125
    • 100 $0.4922
    • 1000 $0.3675
    • 10000 $0.3675
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    TSOP 1333 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSOP1333 Vishay Intertechnology Photo Module for PCM Remote Control Systems Original PDF
    TSOP13336 Vishay Semiconductor Opto Division Sensors, Transducers - Optical Sensors - Photo Detectors - Remote Receiver - IR RECEIVER - 36 KHZ MINIMOLD Original PDF
    TSOP13338 Vishay Semiconductor Opto Division Sensors, Transducers - Optical Sensors - Photo Detectors - Remote Receiver - IR RECEIVER - 38 KHZ MINIMOLD Original PDF
    TSOP1333KA1 Vishay Intertechnology Photo Module for PCM Remote Control Systems Original PDF
    TSOP1333SB1 Vishay Intertechnology Photo Module for PCM Remote Control Systems Original PDF
    TSOP1333TB1 Vishay Intertechnology Photo Module for PCM Remote Control Systems Original PDF

    TSOP 1333 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


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    256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR PDF

    EEPROM 28C256

    Abstract: 7b9729 1C0302 28C040 28C256 82307 28C256 atmel 4b23 6D9708 6C9638
    Text: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C256 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -CYCLE TEST -200°C RETENTION BAKE -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)


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    AT-28C256 MIL-M38535 AT-28C010 AT-28C040 AT-28C256 1C0302 3E0319 3E0323 3G0338 EEPROM 28C256 7b9729 1C0302 28C040 28C256 82307 28C256 atmel 4b23 6D9708 6C9638 PDF

    tsop 338

    Abstract: 28c010 28C010 Atmel 4C016 4b23 4h5229 4A05 MIL-M-38535 2D93 6F9630
    Text: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C010 CMOS EEPROM RELIABILITY DATA* - 150°C DYNAMIC OPERATING LIFE TEST - CYCLE TEST - 200°C RETENTION BAKE - 125°C OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 15 PSIG PRESSURE POT


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    AT-28C010 MIL-M-38535 AT-28C256 AT-28C040 AT-28C010 7G9822 6H9708 9G9937 9G9939 tsop 338 28c010 28C010 Atmel 4C016 4b23 4h5229 4A05 2D93 6F9630 PDF

    28C64 EEPROM

    Abstract: eeprom 28c64 28c64 OB9028 K1909 6D9709 8823 2C9236 6B1999-1 6A9616
    Text: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C64 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -DATA RETENTION BAKE (200°C) -CYCLE TEST -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -15 PSIG PRESSURE POT -85°C/85% RELATIVE HUMIDITY LIFE TEST


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    AT-28C64 AT-28C64 187-3B 133317B2 232510B-2 3A0781 3A0782B1 4B1973 4D1971 4D1971-2 28C64 EEPROM eeprom 28c64 28c64 OB9028 K1909 6D9709 8823 2C9236 6B1999-1 6A9616 PDF

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HN29V51211T-50H 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1333A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are


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    HN29V51211T-50H 113-sector 248-bit) ADE-203-1333A HN29V51211T-50H 48-pin TFP-48DA) Hitachi DSAUTAZ006 PDF

    BS62UV4000

    Abstract: BS62UV4000EC BS62UV4000EI BS62UV4000PC BS62UV4000SC BS62UV4000SI BS62UV4000STC BS62UV4000STI BS62UV4000TC BS62UV4000TI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit BS62UV4000 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I -grade: 20mA (Max.) operating current


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    BS62UV4000 100ns BS62UV4000 R0201-BS62UV4000 BS62UV4000EC BS62UV4000EI BS62UV4000PC BS62UV4000SC BS62UV4000SI BS62UV4000STC BS62UV4000STI BS62UV4000TC BS62UV4000TI PDF

    BS62UV4000

    Abstract: BS62UV4000EC BS62UV4000EI BS62UV4000PC BS62UV4000SC BS62UV4000SI BS62UV4000STC BS62UV4000STI BS62UV4000TC BS62UV4000TI
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit BS62UV4000 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I -grade: 20mA (Max.) operating current


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    BS62UV4000 120ns 150ns BS62UV4000 R0201-BS62UV4000 -40oC BS62UV4000EC BS62UV4000EI BS62UV4000PC BS62UV4000SC BS62UV4000SI BS62UV4000STC BS62UV4000STI BS62UV4000TC BS62UV4000TI PDF

    FBGA DDR3 x32

    Abstract: "DDR3 SDRAM" DDR3 SDRAM 78 ball fbga ddr3 specification DDR3 architecture ELPIDA DDR3 1066 Single Data Rate SDRAM Memory Controller with 512MB DDr3 part number
    Text: DDR3 SDRAM Feature Comparison of DDR3, DDR2, and DDR SDRAM Items DDR3 SDRAM DDR2 SDRAM DDR SDRAM Clock frequency 533/667MHz 200/266/333/400MHz 100/133/166/200MHz Transfer data rate 1066/1333Mbps 400/533/667/800Mbps 200/266/333/400Mbps I/O width x4/x8/x16 x4/x8/x16


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    533/667MHz 200/266/333/400MHz 100/133/166/200MHz 1066/1333Mbps 400/533/667/800Mbps 200/266/333/400Mbps x4/x8/x16 x4/x8/x16/x32 512Mb FBGA DDR3 x32 "DDR3 SDRAM" DDR3 SDRAM 78 ball fbga ddr3 specification DDR3 architecture ELPIDA DDR3 1066 Single Data Rate SDRAM Memory Controller with 512MB DDr3 part number PDF

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash
    Text: INDUSTRIAL MEMORY SOLUTIONS NAND FLASH PRODUCTS & DRAM MODULES Why choose Swissbit Swissbit is the largest independent DRAM module and Flash storage manufacturer in Europe. This enables Swissbit to be a global leader in technology supplying High Quality Memory solutions to the several key market areas


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    CH-9552 D-12681 SAMSUNG 4gb NAND Flash Qualification Report ddr3 MTBF SAMSUNG 256Mb NAND Flash Qualification Reliability part number decoder toshiba NAND Flash MLC DDR3 pcb layout raw card f so-dimm nand flash socket lga 60 DDR3 sodimm pcb layout samsung microsd card 2gb micron DDR3 pcb layout Hynix 32Gb Nand flash PDF

    ddr2 laptop pin

    Abstract: DDR3 Infineon microDIMM 214 DDR3 miniDIMM JEDEC DDR2 DIMM 240 pinout DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR333
    Text: Product Information 2004 MEMORY DRAM Modules Including DDR2 Modules w w w. i n f i n e o n . c o m / m e m o r y Never stop thinking. Introduction One-Stop-Shopping for DRAM Modules J U N E 2 0 0 4 . As a leading memory products supplier, we offer an extensive range of leading-edge DRAM modules.


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    B166-H8412-X-X-7600 ddr2 laptop pin DDR3 Infineon microDIMM 214 DDR3 miniDIMM JEDEC DDR2 DIMM 240 pinout DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR333 PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    BS62UV2001

    Abstract: BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI
    Text: Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62UV2001 „ DESCRIPTION „ FEATURES • Wide Vcc operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 15mA Max. operating current I- grade : 20mA (Max.) operating current


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    BS62UV2001 100ns 100ns -40oC R0201-BS62UV2001 BS62UV2001 BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI PDF

    BS62UV2001

    Abstract: BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI
    Text: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62UV2001 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 15mA Max. operating current I- grade : 20mA (Max.) operating current


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    BS62UV2001 120ns 150ns BS62UV2001 R0201-BS62UV2001 -40oC BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


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    BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 PDF

    PC3-14900

    Abstract: pc3-10600 DDR3 DIMM SPD DDR3 DIMM SPD LRDIMM LRDIMM SPD LRDIMM DDR3-1866 DDR3-2133 DDR3-1866 RDIMM SPD JEDEC minidimm
    Text: DDR3 Module Part Numbering System The part numbering system is available at www.micron.com/numbering DDR3 SDRAM modules MT 8 J TF 256 64 A Z - 1G4 A 1 Micron Technology Printed Circuit Board Revision Designator Number of Memory Components Process Technology


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    PDF

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


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    BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd PDF

    ddr3

    Abstract: intel-centrino J0876E60 DDR3 DIMM elpida DDR3 impedance 78-FBGA "DDR3 SDRAM" 78FBGA DDR3-800 ddr3 tsop
    Text: DDR3 SDRAM DDR3 SDRAMDDR2 SDRAM、DDR SDRAMの比較 項 目 DDR3 SDRAM DDR2 SDRAM DDR SDRAM 転送速度 800/1066/1333/1600Mbps 400/533/667/800Mbps 200/266/333/400Mbps 400/533/667/800MHz (200/266/333/400MHz) (100/133/166/200MHz) 電源電圧 (VDD/VDDQ)


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    800/1066/1333/1600Mbps 400/533/667/800Mbps 200/266/333/400Mbps 400/533/667/800MHz) 200/266/333/400MHz) 100/133/166/200MHz) calibr876E60 00mmx13 20058DDR3 DDR3-1600/1333 ddr3 intel-centrino J0876E60 DDR3 DIMM elpida DDR3 impedance 78-FBGA "DDR3 SDRAM" 78FBGA DDR3-800 ddr3 tsop PDF

    Untitled

    Abstract: No abstract text available
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1024 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current


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    BS62UV1024 150ns BS62UV1024 R0201-BS62UV1024 PDF

    BS62UV1024

    Abstract: BS62UV1024DC BS62UV1024JC BS62UV1024JI BS62UV1024PC BS62UV1024SC BS62UV1024SI BS62UV1024STC BS62UV1024TC BS62UV1024TI
    Text: Preliminary BSI Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1024 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current


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    BS62UV1024 150ns BS62UV1024 R0201-BS62UV1024 -40oC BS62UV1024DC BS62UV1024JC BS62UV1024JI BS62UV1024PC BS62UV1024SC BS62UV1024SI BS62UV1024STC BS62UV1024TC BS62UV1024TI PDF

    BS62UV1024

    Abstract: BS62UV1024DC BS62UV1024JC BS62UV1024JI BS62UV1024PC BS62UV1024SC BS62UV1024SI BS62UV1024STC BS62UV1024TC BS62UV1024TI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit BS62UV1024 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8V ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current


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    BS62UV1024 150ns BS62UV1024 ul50ns -40oC R0201-BS62UV1024 BS62UV1024DC BS62UV1024JC BS62UV1024JI BS62UV1024PC BS62UV1024SC BS62UV1024SI BS62UV1024STC BS62UV1024TC BS62UV1024TI PDF

    BS62LV1024TI

    Abstract: BS62X FS6S0765RCHSYDT BS62XV1024 TSOP-32 BS62LV1024SC
    Text: BSI Extremely Low Power/Voltage CMOS SRAM 128K X 8 bit BS62XV1024 ! FEATURES ! DESCRIPTION • Extremely low operation voltage : 1.2V ~ 2.4V • Extremely low power consumption : Vcc = 1.5V 10mA Max. write current 0.5mA (Max.) read current 0.005uA (Typ.) CMOS standby current


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    BS62XV1024 005uA 250ns BS62XV1024 R0201-BS62LV1024 BS62LV1024 -40oC BS62LV1024TI BS62X FS6S0765RCHSYDT TSOP-32 BS62LV1024SC PDF

    BGA-48-0608

    Abstract: BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP1-48 TSOP2-44
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0 V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current


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    100ns x8/x16 R0201-BS616UV2011 BS616UV2011 BGA-48-0608 BS616UV2011 BS616UV2011AC BS616UV2011DC BS616UV2011DI BS616UV2011EC BS616UV2011EI BS616UV2011TC TSOP1-48 TSOP2-44 PDF

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan
    GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8 PDF

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan
    GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410 PDF