MC74HC1G00DTT1G
Abstract: MC7474 MC74HC1G00
Text: MC74HC1G00 Single 2−Input NAND Gate The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.
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MC74HC1G00
SC70-5/SC-88A/SOT-353
OT23-5/TSOP-5/SC59-5
SC70-5/SC-88A/
OT-353
OT-353
MC74HC1G00DTT1G
MC7474
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AM29LV640T
Abstract: AM29LV640T datasheet TSOP 48 pin flash gbit 120r uAM29LV640T 101R 110R kb 2736 MirrorBit KB-162
Text: MirrorBit Quick Reference Guide -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV033C
Am29LV160M
Am29LV017M
Am29LV116M
Am29LV320MT/B
Am29LV320MH/L
Am29LV033M
Am29LV640T/B
Am29LV320D1
Am29LV640D
AM29LV640T
AM29LV640T datasheet
TSOP 48 pin flash gbit
120r
uAM29LV640T
101R
110R
kb 2736
MirrorBit
KB-162
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tsop 138
Abstract: No abstract text available
Text: DRAM MODULE M374F0805DT1-C M374F0805DT1-C Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0805DT1-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung
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M374F0805DT1-C
M374F0805DT1-C
4Mx16
8Mx72bits
4Mx16bits
400mil
300mil
168-pin
tsop 138
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Untitled
Abstract: No abstract text available
Text: UG52W742 4 8GT(S)G 16M Bytes (2M x 72) DRAM 168Pin DIMM With ECC based on 2M x8 General Description Features The UG52W742(4)8GT(S)G is a 2,097,152 bits by 72 EDO DRAM module With ECC. The UG52W742(4)8GT(S)G is assembled using 9 pcs of 2Mx8 2K/4K refresh DRAMs in a
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UG52W742
168Pin
168-pin
500Max
100Min
540Min)
010Max
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Untitled
Abstract: No abstract text available
Text: UG58W664 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58W664(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module. The UG58W664(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in a 32 pin 400
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UG58W664
168Pin
128ms
1100mil)
450Max
43Max)
150Max
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Untitled
Abstract: No abstract text available
Text: UG52W642 4 8GK(S)G 16M Bytes (2M x 64) DRAM 168Pin DIMM based on 2M x 8 General Description Features The UG52W642(4)8GK(S)G is a 2,097,152 bits by 64 EDO DRAM module . The UG52W642(4)8GK(S)G is assembled using 8 pcs of 2Mx8 2K/4K refresh DRAMs in 400mil SOJ
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UG52W642
168Pin
400mil
ABT16244
240mil
168-pin
1000mil)
190Max
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Untitled
Abstract: No abstract text available
Text: UG52W722 4 8GK(S)G 16M Bytes (2M x 72) DRAM 168Pin DIMM With ECC based on 2M x 8 General Description Features The UG52W722(4)8GK(S)G is a 2,097,152 bits by 72 EDO DRAM module with ECC. The UG52W722(4)8GK(S)G is assembled using 9 pcs of 2Mx8 4K/8K refresh DRAMs in
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UG52W722
168Pin
400mil
ABT16244
240mil
168-pin
190Max
83Max
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Untitled
Abstract: No abstract text available
Text: UG54E642 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54E642(4)4GJ(T)G is a 4,149,304 bits by 64 EDO DRAM module. The UG54E642(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 2K/4K refresh DRAMs in 300mil SOJ
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UG54E642
168Pin
300mil
ABT16244
240mil
168-pin
1000mil)
190Max
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Untitled
Abstract: No abstract text available
Text: UG58W644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58W644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58W644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ
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UG58W644
168Pin
400mil
ABT16244
240mil
168-pin
1000mi
190Max
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Untitled
Abstract: No abstract text available
Text: UG52E722 4 8GK(S)G 16M Bytes (2M x 72) DRAM 168Pin DIMM With ECC based on 2M x 8 General Description Features The UG52E722(4)8GK(S)G is a 2,097,152 bits by 72 EDO DRAM module with ECC. The UG52E722(4)8GK(S)G is assembled using 9 pcs of 2Mx8 4K/8K refresh DRAMs in
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UG52E722
168Pin
400mil
ABT16244
240mil
168-pin
190Max
83Max
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Untitled
Abstract: No abstract text available
Text: UG516W644 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516W644(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W644(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in 400mil SOJ
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UG516W644
168Pin
16Mx4
400mil
ABT16244
240mil
168-pin
190Max
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Untitled
Abstract: No abstract text available
Text: UG51W641 4 6GK(S)G 8M Bytes (1M x 64) DRAM 168Pin DIMM based on 1M x 16 General Description Features The UG51W641(4)6GK(S)G is a 1,048,576 bits by 64 EDO DRAM module . The UG51W641(4)6GK(S)G is assembled using 4 pcs of 1Mx16 1K/4K refresh DRAMs in 400mil SOJ
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UG51W641
168Pin
1Mx16
400mil
ABT16244
240mil
168-pin
1000mi
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Untitled
Abstract: No abstract text available
Text: UG54W664 8 6HK(S)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 16 General Description Features The UG54W664(8)6HK(S)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W664(8)6HK(S)G is assembled using 4 pcs of 4Mx16 4K/8K refresh DRAMs in 50-pin SOJ
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UG54W664
168Pin
4Mx16
50-pin
1250mil)
100Max
54Max)
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Untitled
Abstract: No abstract text available
Text: UG51E641 4 6GK(S)G 8M Bytes (1M x 64) DRAM 168Pin DIMM based on 1M x 16 General Description Features The UG51E641(4)6GK(S)G is a 1,048,576 bits by 64 EDO DRAM module . The UG51E641(4)6GK(S)G is assembled using 4 pcs of 1Mx16 1K/4K refresh DRAMs in 400mil SOJ
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UG51E641
168Pin
1Mx16
400mil
ABT16244
240mil
168-pin
1000mil)
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240mil
Abstract: ABT16244
Text: UG516E644 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516E644(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516E644(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in 400mil SOJ
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UG516E644
168Pin
16Mx4
400mil
ABT16244
240mil
168-pin
540Min)
240mil
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Untitled
Abstract: No abstract text available
Text: UG516W664 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516W664(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W664(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in a 32 pin 400
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UG516W664
168Pin
16Mx4
350Max
89Max)
150Max
81Max)
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Untitled
Abstract: No abstract text available
Text: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ
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UG58E644
168Pin
400mil
ABT16244
240mil
168-pin
1000mil
190Max
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Untitled
Abstract: No abstract text available
Text: UG516W664 8 8HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG516W664(8)8HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W664(8)8HK(S)G is assembled using 16 pcs of 8Mx8 4K/8K refresh DRAMs in a 32 pin 400
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UG516W664
168Pin
350Max
89Max)
150Max
81Max)
100Min
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Untitled
Abstract: No abstract text available
Text: UG52E642 4 8GK(S)G 16M Bytes (2M x 64) DRAM 168Pin DIMM based on 2M x 8 General Description Features The UG52E642(4)8GK(S)G is a 2,097,152 bits by 64 EDO DRAM module . The UG52E642(4)8GK(S)G is assembled using 8 pcs of 2Mx8 2K/4K refresh DRAMs in 400mil SOJ
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UG52E642
168Pin
400mil
ABT16244
240mil
168-pin
1000mil)
190Max
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Untitled
Abstract: No abstract text available
Text: UG54E722 4 4GJ(T)G 32M Bytes (4M x 72) DRAM 168Pin DIMM With ECC based on 4M x 4 General Description Features The UG54E722(4)4GJ(T)G is a 4,194,304 bits by 72 EDO DRAM module with ECC. The UG54E722(4)4GJ(T)G is assembled using 18 pcs of 4Mx4 2K/4K refresh DRAMs in
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UG54E722
168Pin
300mil
ABT16244
240mil
168-pin
190Max
83Max
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Untitled
Abstract: No abstract text available
Text: UG54W722 4 4GJ(T)G 32M Bytes (4M x 72) DRAM 168Pin DIMM With ECC based on 4M x 4 General Description Features The UG54W722(4)4GJ(T)G is a 4,194,304 bits by 72 EDO DRAM module with ECC. The UG54W722(4)4GJ(T)G is assembled using 18 pcs of 4Mx4 2K/4K refresh DRAMs in
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UG54W722
168Pin
300mil
ABT16244
240mil
168-pin
190Max
83Max
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Untitled
Abstract: No abstract text available
Text: UG54W722 4 8GK(S)G 32M Bytes (4M x 72) DRAM 168Pin DIMM With ECC based on 2M x 8 General Description Features The UG54W722(4)8GK(S)G is a 4,194,304 bits by 72 EDO DRAM module with ECC. The UG54W722(4)8GK(S)G is assembled using 18 pcs of 24Mx8 2K/4K refresh DRAMs in
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UG54W722
168Pin
24Mx8
400mil
ABT16244
240mil
168-pin
190Max
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Untitled
Abstract: No abstract text available
Text: UG52W641 4 6GK(S)G 16M Bytes (2M x 64) DRAM 168Pin DIMM based on 1M x 16 General Description Features The UG52W641(4)6GK(S)G is a 2,097,152 bits by 64 EDO DRAM module . The UG52W641(4)6GK(S)G is assembled using 8 pcs of 1Mx16 1K/4K refresh DRAMs in 400mil SOJ
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UG52W641
168Pin
1Mx16
400mil
ABT16244
240mil
168-pin
1000m
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F320 8 0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits
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KMM372F320
16Mx4,
32Mx72bits
16Mx4bits
400mil
168-pin
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