Untitled
Abstract: No abstract text available
Text: TSM55N03 25V N-Channel MOSFET TO-252 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 25 Features ● ● ID (A) 6 @ VGS = 10V 30 9 @ VGS = 4.5V 30 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
|
Original
|
PDF
|
TSM55N03
O-252
TSM55N03CP
|
TSM55N03
Abstract: TSM55N03CP 25V 55A to-252
Text: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features High Density Cell Design for Ultra Low On-Resistance
|
Original
|
PDF
|
TSM55N03
TSM55N03CP
O-252
300uS,
O-252
TSM55N03
TSM55N03CP
25V 55A to-252
|
Untitled
Abstract: No abstract text available
Text: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Features Advanced trench process technology Fully Characterized Avalanche Voltage and Current
|
Original
|
PDF
|
TSM55N03
TSM55N03CP
O-252
300uS,
O-252
|
TS13002
Abstract: TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431
Text: TAIWAN SEMICONDUCTOR APPLICATION NOTE LCD TV / Monitor TV Charger Connector UPS SMPS Audio Scanner DSC Blue Tooth Printer TS1117 TS431 TS34063 TS78xx TS34063 TS494 TS78xx TS78xx TS9000 TS9006 TS34063 TS108x TS317 TS13002 TS431 TSM2N60 TS431 TS358 TS79xx TS9001
|
Original
|
PDF
|
TS1117
TS431
TS34063
TS78xx
TS494
TS9000
TS9006
TS13002
TS2576
TS317
TS39204
dvd smps
TS2596
TS34063
TSM2301
TS9007
TS431
|
MOSFET 55N03
Abstract: 55n03
Text: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin Definition; 1. Gate V DS V 2. Drain 3. Source 25 R os^m O ) I d (A) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2 3 Features Block Diagram ♦ Advance Trench Proce s s Tech no logy
|
OCR Scan
|
PDF
|
TSM55N03
O-252
TSM55N
MOSFET 55N03
55n03
|
MOSFET 55N03
Abstract: No abstract text available
Text: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin D efinition; 1. Gate 2. Drain 3. Source & V DS V R os^m O ) Id (A) 6 @ V cs = 1 û V 30 9 @ V<;s z 4.5V 30 25 1 2 3 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy
|
OCR Scan
|
PDF
|
TSM55N03
O-252
MOSFET 55N03
|
55n03
Abstract: marking 1AJ MOSFET 55N03 TSM55N03
Text: s TAIWAN TSM55N03 S E M IC O N D U C T O R 25V N-Channel MOSFET pb RoHS C O M P L IA N C E TO-252 PRODUCT SUM M ARY Pin Definition: 1. Gate V o s (V ) 2. Drain 3. Source /Ù 7 f T O %T x, 25 R os^m O ) I d (A ) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2~3
|
OCR Scan
|
PDF
|
TSM55N03
O-252
TSM55NÃ
O-252
55n03
marking 1AJ
MOSFET 55N03
TSM55N03
|
