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    TSM3481 Search Results

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    TSM3481 Price and Stock

    Taiwan Semiconductor TSM3481CX6 RFG

    MOSFET P-CHANNEL 30V 5.7A SOT26
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    DigiKey TSM3481CX6 RFG Cut Tape 6,016 1
    • 1 $0.63
    • 10 $0.542
    • 100 $0.3766
    • 1000 $0.23898
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    TSM3481CX6 RFG Reel 3,000
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    • 10000 $0.17925
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    TSM3481CX6 RFG Digi-Reel 1
    • 1 $0.63
    • 10 $0.542
    • 100 $0.3766
    • 1000 $0.23898
    • 10000 $0.23898
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    Avnet Americas TSM3481CX6 RFG Reel 16 Weeks 27,000
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    Mouser Electronics TSM3481CX6 RFG
    • 1 $0.62
    • 10 $0.542
    • 100 $0.377
    • 1000 $0.239
    • 10000 $0.179
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    Newark TSM3481CX6 RFG Cut Tape 1
    • 1 $0.645
    • 10 $0.564
    • 100 $0.392
    • 1000 $0.249
    • 10000 $0.249
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    Avnet Asia TSM3481CX6 RFG 30 Weeks 27,000
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    EBV Elektronik TSM3481CX6 RFG 32 Weeks 3,000
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    Taiwan Semiconductor TSM3481CX6

    -30V, -5.7A, SINGLE P-CHANNEL PO
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    DigiKey TSM3481CX6 Reel 12,000
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    Mouser Electronics TSM3481CX6
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    TSM3481 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSM3481 Taiwan Semiconductor 30V P-Channel MOSFET Original PDF
    TSM3481CX6RF Taiwan Semiconductor 30V P-Channel MOSFET Original PDF
    TSM3481CX6 RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 5.7A SOT26 Original PDF

    TSM3481 Datasheets Context Search

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    TSM3481

    Abstract: No abstract text available
    Text: TSM3481 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 48 @ VGS = -10V -5.3 79 @ VGS = -4.5V -4.1 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3481 OT-26 TSM3481CX6 TSM3481

    Untitled

    Abstract: No abstract text available
    Text: TSM3481 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 48 @ VGS = -10V -5.3 79 @ VGS = -4.5V -4.1 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3481 OT-26 TSM3481CX6

    2U52

    Abstract: 3481C
    Text: TAIW AN s TSM3481 SEMICONDUCTOR 30V P-Channe! MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source R Ds on)(m Q ) b (A) 48 @ V CS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V ) -30


    OCR Scan     		PDF TSM3481 3481C 2U52

    M3481

    Abstract: TSM3481CX6
    Text: E TAIWAN TSM3481 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source S54 R Ds(on)(m Q ) b (A) 48 @ VCS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )


    OCR Scan     		PDF M3481 OT-26 TSM3481CX6 OT-26 M3481

    2A52

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3481 3ÛV P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 65 4 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source R Ds cn (m Q ) b (A) 48 @ V CS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )


    OCR Scan     		PDF TSM3481 3481C 2A52