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    Taiwan Semiconductor TSM2N60SCW RPG

    MOSFET N-CH 600V 600MA SOT223
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    TSM2N60S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSM2N60SCW RPG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 600MA SOT223 Original PDF

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    Power MOSFET SOT-223

    Abstract: mosfet 600V 6A N-CHANNEL TSM2N60SCW 600V 2A MOSFET N-channel pin diagram of MOSFET Diode bridge 600V 0.8A "Power MOSFET" a09 marking MOSFET 450 mosfet j 114
    Text: TSM2N60S 600V N-Channel Power MOSFET SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60S OT-223 TSM2N60S Power MOSFET SOT-223 mosfet 600V 6A N-CHANNEL TSM2N60SCW 600V 2A MOSFET N-channel pin diagram of MOSFET Diode bridge 600V 0.8A "Power MOSFET" a09 marking MOSFET 450 mosfet j 114

    Untitled

    Abstract: No abstract text available
    Text: TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)() ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60S OT-223 TSM2N60S