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    TSM2311CX Search Results

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    TSM2311CX Price and Stock

    Taiwan Semiconductor TSM2311CX-RFG

    MOSFET P-CHANNEL 20V 4A SOT23
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    DigiKey TSM2311CX-RFG Reel 12,000
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    TSM2311CX-RFG Digi-Reel 1
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    TSM2311CX-RFG Cut Tape 1
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    Taiwan Semiconductor TSM2311CX-01-RFG

    MOSFET P-CH 20V 4A SOT23
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    DigiKey TSM2311CX-01-RFG Reel
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    MOSLEADER TSM2311CX-RFG-ML

    P-Channel -20V -4A SOT-23
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    DigiKey TSM2311CX-RFG-ML Reel 200
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    Others TSM2311CX

    AVAILABLE EU
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    ComSIT USA TSM2311CX 1,400
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    TSM2311CX Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM2311CX Taiwan Semiconductor 20V P-Channel Enhancement Mode MOSFET Original PDF
    TSM2311CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 4A SOT23 Original PDF

    TSM2311CX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSM2311

    Abstract: TSM2311CX marking code TSM2311CX SOT23 p-channel SOT-23 20V
    Text: TSM2311 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2311 OT-23 TSM2311CX TSM2311 marking code TSM2311CX SOT23 p-channel SOT-23 20V

    sot-23 P-Channel MOSFET

    Abstract: TSM2311CX TSM2311
    Text: TSM2311 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities


    Original     		PDF TSM2311 OT-23 TSM2311CX OT-23 300uS, sot-23 P-Channel MOSFET TSM2311CX TSM2311

    MOSFET P-Channel sot-23

    Abstract: TSM2311CX A1 SOT-23 MOSFET P-CHANNEL
    Text: TSM2311 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2311 OT-23 TSM2311CX OT-23 MOSFET P-Channel sot-23 A1 SOT-23 MOSFET P-CHANNEL

    marking DIODE 2U 04

    Abstract: mosfet marking code AL sot-23 TSM2311 TSM2311CX marking 2RV SOT-23
    Text: s TAIWAN SEMICONDUCTOR TSM2311 20V P-Channel MOSFET pb RoHS C O M P LiA N C E PRODUCT SUMMARY SOT-23 1 Vos (V) F in Definition: 1. Gat e 2. Sour ce 3 -20 3 . D ra in 2 RDS(cn)(mQ) b (A) 55 @ VGs = -4.5V -4.Û 85 @ V«s - -2.5V -2.5 ffestufss Block Diagram


    OCR Scan     		PDF TSM2311 OT-23 TSM2311CX OT-23 marking DIODE 2U 04 mosfet marking code AL sot-23 TSM2311 marking 2RV SOT-23