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Taiwan Semiconductor TSM2311CX-RFG MOSFET P-CHANNEL 20V 4A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSM2311CX-RFG	Reel			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	TSM2311CX-RFG	Cut Tape			1	1 $0.43 10 $0.43 100 $0.43 1000 $0.43 10000 $0.43	Buy Now
	TSM2311CX-RFG	Digi-Reel			1	1 $0.43 10 $0.43 100 $0.43 1000 $0.43 10000 $0.43	Buy Now
Taiwan Semiconductor TSM2311CX-01-RFG MOSFET P-CH 20V 4A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSM2311CX-01-RFG	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MOSLEADER TSM2311CX-RFG-ML P-Channel -20V -4A SOT-23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSM2311CX-RFG-ML	Reel			200	1 - 10 - 100 - 1000 $0.03416 10000 $0.03122	Buy Now
Others TSM2311CX AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TSM2311CX		1,050			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TSM2311 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSM2311		Taiwan Semiconductor	20v P-channel Enhancement Mode Mosfet		Original	PDF
TSM2311CX		Taiwan Semiconductor	20V P-Channel Enhancement Mode MOSFET		Original	PDF
TSM2311CX RFG		Taiwan Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 4A SOT23		Original	PDF

TSM2311 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TSM2311 Abstract: TSM2311CX marking code TSM2311CX SOT23 p-channel SOT-23 20V Text: TSM2311 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	TSM2311 OT-23 TSM2311CX TSM2311 marking code TSM2311CX SOT23 p-channel SOT-23 20V	PDF
sot-23 P-Channel MOSFET Abstract: TSM2311CX TSM2311 Text: TSM2311 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS on , Vgs @ - 4.5V, Ids @ - 4.0A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 2.5A = 85mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities	Original	TSM2311 OT-23 TSM2311CX OT-23 300uS, sot-23 P-Channel MOSFET TSM2311CX TSM2311	PDF
MOSFET P-Channel sot-23 Abstract: TSM2311CX A1 SOT-23 MOSFET P-CHANNEL Text: TSM2311 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance	Original	TSM2311 OT-23 TSM2311CX OT-23 MOSFET P-Channel sot-23 A1 SOT-23 MOSFET P-CHANNEL	PDF
KF6N60 Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION	Original	USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05	PDF
TS13002 Abstract: TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431 Text: TAIWAN SEMICONDUCTOR APPLICATION NOTE LCD TV / Monitor TV Charger Connector UPS SMPS Audio Scanner DSC Blue Tooth Printer TS1117 TS431 TS34063 TS78xx TS34063 TS494 TS78xx TS78xx TS9000 TS9006 TS34063 TS108x TS317 TS13002 TS431 TSM2N60 TS431 TS358 TS79xx TS9001	Original	TS1117 TS431 TS34063 TS78xx TS494 TS9000 TS9006 TS13002 TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431	PDF
SOT23 25N Abstract: No abstract text available Text: TAIW AN s TSM2311 SEMICONDUCTOR 20V P-Channel MOSFET pbi RoHS CO M PLfAN C E PRODUCT SUMMARY SO T-23 P in D e fin itio n : & 1 2 Vos (V 1. Gate 2. Source 3. Drain R D S (c n )(m Q ) b (A) 55 @ VGs = -4 .5 V -4.Û 85 @ V«s - -2.5V -2.5 -20 Features Block Diagram	OCR Scan	TSM2311 SOT23 25N	PDF
marking DIODE 2U 04 Abstract: mosfet marking code AL sot-23 TSM2311 TSM2311CX marking 2RV SOT-23 Text: s TAIWAN SEMICONDUCTOR TSM2311 20V P-Channel MOSFET pb RoHS C O M P LiA N C E PRODUCT SUMMARY SOT-23 1 Vos (V) F in Definition: 1. Gat e 2. Sour ce 3 -20 3 . D ra in 2 RDS(cn)(mQ) b (A) 55 @ VGs = -4.5V -4.Û 85 @ V«s - -2.5V -2.5 ffestufss Block Diagram	OCR Scan	TSM2311 OT-23 TSM2311CX OT-23 marking DIODE 2U 04 mosfet marking code AL sot-23 TSM2311 marking 2RV SOT-23	PDF